T4151 Search Results

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

T6440M

Abstract: RCA-CA3058 T2850 RCA t2710 t6430d T2313 T2310 2N5446 T4151 T6420M
Contextual Info: 1 1 ZERO VOLTAGE SWITCH < o H < 31 7 * z o + STANOARO < o ID o 2 < s 3 > + 1.5 4 06 tn < O H < 05 -t* X» n £ o cn o c o o o c3 S Ì 7 2 > A 2 —1 2 to >J o -1 O KJ CT> 2 H 2 fO o a -1 4» KJ O H ? > : T + _ o ä 3 * ? .s < j !° Ï fi5 cn J3 Q >» ^ 05 4k 4k ro -»

Contextual Info: M0 E D FASCO INDS/ SENISYS m 3 4 CH 7 3 3 0001253 7 O S E N I CLD41/CLD42 Series Silicon Planar Photodiodes Features Absolute Maximum Ratings*1* Ta = 25°C unless otherwise stated. t • • • • Storage Temperature. . ,.-40*C tor + 15G*C

CLD56A

Abstract: CLD56 photodiode PN cmz1
Contextual Info: FASCO INIS/ SE N I S Y S 40E 34^730 D DG012b0 S S S E N I icEsaaaa CLD56 Series ÍT - 4 '5 Í Silicon Planar Photodiodes Features Absolute Maximum Ratings^1' (Ta = 25,‘C unless otherwise stated. • • • • • Storage TemperatureOperating Temperature"

CLD42

Abstract: CL042 CLD41 CLD41BB CLD42BB
Contextual Info: 3 4 ^ 7 3 0 ooacma a ^ 40E D FASCO seni INDS/ SENISYS CLIMI CLD42 CLD41BB Silicon Planar CLD42BB Photovoltiac Diodes Product Data GENERAL DESCRIPTION — The CLD Series of Photo­ diodes is specifically designed to optimize Photovoltaic characteristics. They are all Silicon PN Planar diodes in

SBC102

Abstract: photodiode sharp sbc T4151 SBC541 SBC111 SBC255 A350L 500EX SBC11
Contextual Info: S HARP ELEK/ MELEC DIV 1SE D | fllflG?Ta GQ0E70Û ü l Blue Sensitive Photodiodes • 1. 2. 3. SBC Series ■ F ea tu res Suitable for visible light measurement A wide range of sensitivity wavelength A : 350~l,100nm Wide acceptance A pp licatio n s 1. Illuminance meters

color sensor pd153

Abstract: PD153 circuit color sensor Sharp Semiconductor PD15-3 color sensor
Contextual Info: SH ARP ELEK/ MEL EC D IV 15E O C olor Sensor PD153 • I fllflO?^ 0005720 1 TO -18 Type Color Sensor F e a tu re s ■ 1. High sensitivity in long wavelength Shortcircuit current ratio Isc2 /Isci : MIN. 4.5 at A =900nm 2. Output corresponding to the wavelength of

VTB9412B

Abstract: VTB9413B VTB9414B
Contextual Info: _ 5 bE D • 3030bDT 0001DS7 T52 ■ VCT V T B 9 4 1 2 B , 3B, VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planarsilicon photodiode in

Contextual Info: 3 G 3 0 b C H DooiG'ib ? t s * v c t 5bE D VTS VTS-1 Process Photodiodes E G 8« G V A C T E C PRODUCT DESCRIPTION T-41-51 PACKAGE DIMENSIONS inch mm Five cell arrays of large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These

Contextual Info: 5bE D BDBDbQ^ GGQ1G5M IVCT V T B 8 4 4 3 B , 8 4 4 4B VTB Process Photodiodes E 243 Q 8. G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 21F PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. The pack­ age incorporates an infrared rejection

photodiode ge

Abstract: VTB8443 VTB8444 photodiode 516
Contextual Info: SbE » m aDBGtOT D0010S2 470 VTB Process Photodiodes VCT V T B 8 4 4 3 , 8444 E G & G VACTE C T-41-51 PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. Chip is

VTB6060J

Abstract: VTB6061J Vactec 6061J
Contextual Info: SbE D • 3030bCH 0DÜ1 ÜM7 DD3 VTB Process Photodiodes E G & G IVCT VTB6060J, 6061J VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a 'flat" w indow , three lead T O -8 pack­

40-50S

Abstract: VTP4050 VTP4050S
Contextual Info: aüaübGT 0001073 SbE D VTP4050, 4050S VTP Process Photodiodes E G & G I VCT ITS T-41-51 VA CT E C PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy.

BA 4915

Abstract: COM43 TNY 700 CI4151 MC141516
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC141516 LCD Backplane Driver CMOS The MC141516 is a high voltage passive LCD Baiekpiane driver. It is a tow power ailicon-gate CMOS LCD drtv*rei$>WWob consists of 64 backplane driving outputs for 64 MUX or lovnV LCD par»!. The

Contextual Info: SbE D • BDSGbQ'ì 0 0 0 1 1 2 1 7ÔB ■ VCT VT0340S Rev. B SILICON PHOTODIODE J ^ E G zG VACTEC VTD34 OPTOELECTRONICS BPW 34 INDUSTRY EQUIVALENT E 6 8t G V A C T E C T-41-51 PRODUCT DESCRIPTION FEATURES • This P on N photodiode is designed to provide

VTP1012

Abstract: VTP1013
Contextual Info: BDBDbD^ GGDlObb Tb5 H V C T 5b E D VTP Process Photodiodes VTP10 12 , 1013 E 6 & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm .1 5 4 ( 3 . 9 1 ) 1 .0 0 ( 2 5 . 4 ) CASE 17 PRODUCT DESCRIPTION Small area planar silicon photodiode in a "flat" window TO-46 package. Cathode

VTP8440

Abstract: VTP8441
Contextual Info: SbE ]> • BOBGbG^ DGOlOfll 271 « V C T V T P 8 4 4 0 , 8441 VTP Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 21 P la n a r s ilic o n photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear

PD170V1

Abstract: SM 4151 terminal block aar osai
Contextual Info: Color Sensor SHARP E L E K / PD170V1 MELEC D I V PD170V1 • 2bE ì> B 0DG43n R. G. B. Color Sensor T BSRPJ r-w-sv O u tlin e D im e n s io n s F e a tu re s 1. 01007=10 U nit : m m C olor sensor with th ree photodiodes, sensi­ tive to the incident lights of th ree different

quadrant photodiode

Abstract: T4151 siemens SFH nm of IC 4151
Contextual Info: SIEMENS C M P N T S -i OPTO 4HE • T> Û23b32b G O G S n b ? M S I E X S I E M E N S S F H 204 SILICON FOUR QUADRANT PHOTODIODE T-41-51 Package Dimensions in Inches mm .21 (5,4) I— .18(4,5) •’8 (4,5 .30(7,5) ' M (7,1) • R IT i l l lU*3' -J - .03 (0,75) f

PHOTODIODE 708

Abstract: br A 708
Contextual Info: • bfl02245 000014? 7 IOTI OPTO TECHNOLOGY INC 42E T> Ml-3/ OPTO TECHNOLOGY PN SILICON PHOTODIODE T Y P E OT 4 2 3 Features ■ Low co st ■ High speed ■ T-1 plastic package Description Opto Technology's OT 4 2 3 con­ s is ts of a PN junction silicon

44ph05m

Abstract: 68PH08M APPLIED SOLAR ENERGY LSC 4350 33BH05M 22PV18M 44bh05m Applied Solar solar photodiodes adc-7050
Contextual Info: ~ 0253815 ADVANCED DETECTOR bö DeTI 0 2 5 3 0 1 5 CORP ODOGS?! 68C 00271 4 D ¥~ _ T-41-47 GENERÄL PURPOSE PHOTOSENSORS - CHIP FORM 4 Specifications subject to change without notice for product revisions and improvements G eneral Purpose Photosensors - Chip

LTR-546AD

Abstract: D0-201AD liteon PBPC LTR546AD
Contextual Info: J LITE-ON INC l it e m : 31E » 553h3b7 0001664 2 Q L T N BLACK PLASTIC PHOTODIODE LTR-546AD FEATURES • • • • • HIGH PHOTO SENSITIVITY. SUITABLE FOR INFRARED RADIATIO N . LOW JUNCTION CAPACITANCE. HIGH CUT-OFF FREQUENCY. FAST SWITCHING TIME. DESCRIPTION

RCA-CA3058

Abstract: RCA t2710 T2850 RCA T2302 T2850 Series t2710 T4140 rca t2800 T4115 Series T8421 Series
Contextual Info: Application Inform ation Triacs Current Voltage ' t R M S a Range - V Package Series T ypical A pplications L OW-C URRENT SEN S ITIV E -G ATE 1.6 -2 .5 100400 Mod. T O -5 & M od. TO-5 w Rad. T 23 0 0 T2301 T 2302 T2310 T2311 T2312 IC C o n tro l C ircu it to Power C ontrol

k4070

Abstract: VTP5050 VTP5051
Contextual Info: sb E » • 3 0 3 qi ,c h a a o i a 7 b t o h » v c t VTP5050, 5051 VTP Process Photodiodes E 6 & G VACT EC T-41-51 PACKAGE DIMENSIONS inch mm f.0 0 (25.4) .182 (*.62) PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a "flat" window, dual lead TO-5 package.