VTB6061J Search Results

VTB6061J

Contextual Info: VTB Process Photodiodes VTB6061J PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to

VTB6061JH

Abstract: D92-02
Contextual Info: VTB Process Photodiodes VTB6061JH PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to

Contextual Info: VTB Process Photodiodes VTB6061J PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to

Contextual Info: VTB Process Photodiodes VTB6061JH PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to

Contextual Info: VTB6061J VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2} Large area planar silicon photodiode in a "flat” window, three lead TO-8 pack­ age. Chip is isolated from case. The

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

VTB6060J

Abstract: VTB6061J Vactec 6061J
Contextual Info: SbE D • 3030bCH 0DÜ1 ÜM7 DD3 VTB Process Photodiodes E G & G IVCT VTB6060J, 6061J VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a 'flat" w indow , three lead T O -8 pack­

VTB6061J

Contextual Info: VTB Process Photodiodes V T B 6 0 6 1J PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION C A S E 15A Large area p la n a rsilico n photodiode in a "fla t’ w indow , three lead T O -8 pack­ age. C h ip is isolated from case. Th e third lead allow s ca se to be grounded.

VTB6060

Abstract: 2X10 VTB6060J VTB6061J 6061J
Contextual Info: SbE » • 3Q3DbDT 0001D147 0D3 VTB Process Photodiodes IVCT VTB6060J, 6061J E G & G VACTEC T -41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Large area planar silicon photodiode in a 'flat" window, three lead TO-8 pack­ age. Chip is isolated from case. The

VTB8440

Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
Contextual Info: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue