VTB6061B Search Results

VTB6061BH

Abstract: DSA002733
Contextual Info: VTB Process Photodiodes VTB6061BH PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. The package incorporates an infrared rejection filter. Cathode

Contextual Info: VTB Process Photodiodes VTB6061B PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. The package incorporates an infrared rejection filter. Cathode

Contextual Info: VTB Process Photodiodes VTB6061BH PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. The package incorporates an infrared rejection filter. Cathode

Contextual Info: VTB6061 CIE VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a "flat” window, dual lead TO-8 pack­ age. This photodiode is a spectrally modified VTB6061B with a spectral response closely resembling that of the

VTB6061B

Abstract: k420
Contextual Info: VTB Process Photodiodes VTB6061B PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. The package incorporates an infrared rejection filter. Cathode

K2635

Abstract: silicon power 4GB VTB6061 VTB6061B TO12 CASE
Contextual Info: VTB Process Photodiodes VTB6061B PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planarsilicon photodiode in a “flat" window, dual lead TO-8 pack­ age. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

dual photodiode

Abstract: photodiode eyes response application photodiode eye silicon photodiode human eye VTB6061CIE photodiode eyes response VTB6061B VTB6061BH
Contextual Info: VTB Process Photodiodes VTB6061CIEH PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) VTB6061CIEH vs HUMAN EYE RESPONSE Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. This photodiode is

VTB6060B

Abstract: VTB6061B
Contextual Info: 5bE D 3030b0S DODlOHb 177 H V C T V T B 6 0 6 0B , 6061 B VTB Process Photodiodes E G & G VACTEC T -41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a “flat" window, dual lead TO-8 pack­ age. The package incorporates an in­

dual photodiode

Abstract: VTB6060B Photodiodes 6061 vactec VTB6061B
Contextual Info: 5bE T> 3D3DbD^ DOOlOHb 177 H V C T VTB Process Photodiodes V T B 6 0 6 0 B , 6061 B E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a “flat" window, dual lead TO-8 pack­ age. The package incorporates an in­

photodiode eyes response application

Abstract: dual photodiode VTB6061B VTB6061CIE photodiode eye
Contextual Info: VTB Process Photodiodes VTB6061CIE PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) VTB6061CIE vs HUMAN EYE RESPONSE Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. This photodiode is

VTB8440

Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
Contextual Info: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0

Contextual Info: VTB6061 B VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planarsilicon photodiode in a “flat” window, dual lead TO-8 pack­ age. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes