VTB1113 Search Results

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

VTB1112B

Abstract: VTB1113B
Contextual Info: VTB Process Photodiodes VTB 11 12B , 1113B PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high

Contextual Info: SbE D • BüBObOS 0001035 3e]! H V C T V TB 1 1 1 2I , 11131 VTB Process Photodiodes E G & 6 VACTEC PACKAGE DIMENSIONS inch mm CASE 19 PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead, TO-46 package. Chip is isolated from the case. These

Contextual Info: VTB Process Photodiodes VTB1112, 1113 PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes have very

VTB1113H

Abstract: VTB1112H
Contextual Info: VTB Process Photodiodes VTB1112H, 1113H PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes have very

Contextual Info: 5bE D • 303DbDci G0 010 34 455 H V C T VT B 1 1 1 2B I, 13BI VTB Process Photodiodes E G 8. G VACTEC PACKAGE DIMENSIONS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead, TO-46 package. The package incorporates an infrared rejection filter. Chip is isolated from

TB505

Contextual Info: VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS PRODUCT DESCRIPTION FEATURES • • • • • This series of P on N silico n d iod es is primarily intended for use in the photovoltaic mode but may be used with a small reverse bias. The diod es have

VTB1113B

Abstract: VTB1112B
Contextual Info: VTB Process Photodiodes VTB1112B, 1113B PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package

1113B

Contextual Info: VTB Process Photodiodes VTB1112B, 1113B PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package

VTB8440

Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
Contextual Info: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue

VTS3082

Abstract: 476 20k cap VTL5C3 980-2675 VTS3085 VTP1188S 980-0004 photoconductive cells VT935G vactrol
Contextual Info: PerkinElmer Photoconductive Cells, Emitters, Photo Diodes/Transistors, Optoisolators Photoconductive Cells Silicon Photodiodes Electrical/Optical Characteristics @ 25¡C Photoconductive cells provide a very economical and technically superior solution for many light level

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0

A 69157 scr

Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
Contextual Info: ND3% BASE1 XXXX4641-1306-1-P 1306 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 14:59 TS:TS date TS time LEDS & ACCESSORIES Find Datasheets Online LED DESIGN KITS • THROUGH-HOLE LEDS POWER LINE DESIGNER KIT HIGH-INTENSITY LED LAMPS CONT. T- 13⁄4 (5mm)

Contextual Info: V T B 1 1 1 2 B , 1113B VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 TD-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package Incorporates an infrared

Contextual Info: VTB Process Photodiode VTB1112BH, 1113BH PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package

5041J

Abstract: photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B
Contextual Info: This Material VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS Copyrighted P R O D U C T D ESC RIPTIO N FEATURES • Enhanced UV to IR spectral range. • Integral IR rejection filters available • No UV enhancement- By Its • Response @ 220 nm, 0.06 A/W, Typ with

VTB1112BI

Contextual Info: S la E D 3G30bCH G001G34 VTB Process Photodiodes E G 8. G MSS H V C T VT B 11 12B I, 13BI 7 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in

VTB1112I

Abstract: VTB1113I
Contextual Info: SbE J> m B O B O b C ì 0 0 0 1 D 3 5 3 e]! « V C T VTB Process Photodiodes V T B 1 1 1 2 I , 11131 E G & G VACTEC PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Sm all area planar silicon photodiode in

VTB1113

Abstract: VTB1112
Contextual Info: VTB Process Photodiodes VTB1112, 1113 PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes have very

VTB1112H

Abstract: VTB1113H
Contextual Info: VTB Process Photodiodes VTB1112H, 1113H PACKAGE DIMENSIONS inch mm CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes have very