VTB8441B Search Results

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

Contextual Info: VTB Process Photodiodes VTB8440B, 8441B PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared

Contextual Info: 5bE D 3 03 0^0 =5 00D1D53 IVCT 307 V T B 8 4 4 0 B , 1B, 2B VTB Process Photodiodes T -4 1 -5 1 E G & G VACTEC PACKAGE DIMENSIONS inch mm CASE 21F PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. The pack­ age incorporates an infrared rejection

100 VTB 307

Abstract: VTB 307 VTB8440B VTB8441B VTB8442B
Contextual Info: SbE ]> , ^ 00 010 53 30301 0 307 I VCT VTB8440B. VTB Process Photodiodes T-41-51 E G & G VACTEC PA C K A G E DIMENSIONS inch mm CASE 21F PRO D UCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. The pack­ age incorporates an infrared rejection

VTB8440B

Abstract: VTB8441B 8441B
Contextual Info: VTB Process Photodiodes VTB8440B, 8441B PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared

vtb8440bh

Abstract: VTB8441BH 8441BH PerkinElmer VTB8440BH application notes VTB8441B MAX2850 VTB8440B 2122 opto Diodes Ceramic
Contextual Info: VTB Process Photodiode VTB8440BH, 8441BH PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared

Vactec 8441b

Abstract: VTB8441B Ir photodiodes 2B50 ID12 VTB8440B VTB844DB Vactec VTB process photodiodes photodiodes
Contextual Info: 20/07 '00 11:02 01189845425 PACER COMPONENTS V T B8 44 0B , 8441B VTB Process Photodiodes 7'W 7' A P A C K A G E D IM E N S IO N S \r inch mm -ilû (7.B7) .070 (1.7B) .060 (1.52) (f^ 3 ,soï 60) H0M‘ fib MINIMUM .315 (6-00) .305 (7.75) (5.00) NOM. (5-00)

VTB8440

Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
Contextual Info: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue

VTS3082

Abstract: 476 20k cap VTL5C3 980-2675 VTS3085 VTP1188S 980-0004 photoconductive cells VT935G vactrol
Contextual Info: PerkinElmer Photoconductive Cells, Emitters, Photo Diodes/Transistors, Optoisolators Photoconductive Cells Silicon Photodiodes Electrical/Optical Characteristics @ 25¡C Photoconductive cells provide a very economical and technically superior solution for many light level

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0

A 69157 scr

Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
Contextual Info: ND3% BASE1 XXXX4641-1306-1-P 1306 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 14:59 TS:TS date TS time LEDS & ACCESSORIES Find Datasheets Online LED DESIGN KITS • THROUGH-HOLE LEDS POWER LINE DESIGNER KIT HIGH-INTENSITY LED LAMPS CONT. T- 13⁄4 (5mm)

Contextual Info: VTB8440B, 8441B VTB Process Photodiodes P A C K A G E DIMENSIONS inch mm CASE 21F PRO D UCT DESCRIPTION Pla n ar silico n photodiode in a re­ cessed ceram ic package. The package incorporates an infrared rejection filter. These diodes have very high shunt

VTB8440B

Abstract: VTB8440 VTB8441B VTB process photodiodes VTB8441
Contextual Info: VTB Process Photodiodes VTB8440B, 8441B PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared