VTD34 Search Results

VTD34SM

Contextual Info: SILICON PHOTODIODE VTD34SM FEATURES PRODUCT DESCRIPTION • High sensitivity • Low capacitance This P on N photodiode is packaged in a transparent plastic package with the leads configured for surface mounting. • Fast response • Low noise • High shunt impedance

Photodiode vactec

Abstract: bpw 50 VTD34 BPW 34
Contextual Info: SbE D • 3D3QbOcì 0001121 7ÔÔ * V C T V T D 3 4D S Rev. B SILICON PHOTODIODE J ^ E G a G VACTEC VTD34 OPTOELECTRONICS E BPW 34 INDUSTRY EQUIVALENT G 8c G V A C T E C T -4 1 -5 1 PRODUCT DESCRIPTION FEATURES • High sensitivity • Lo w capacitance •

BPW34F

Abstract: VTD34F
Contextual Info: VTD34F Alternate Source/ Second Source Photodiodes BPW 34F IN D U STRY EQUIVALENTI PACKAGE DIMENSIONS inch (mm 182 ( ¿ .6 2 ) 172 ( 4 . 3 7 )] (0 .5 8 ) .0 39 ( 3 .3 0 ) .0 4 2 ( 1 .0 7 ) ( 1. 0 0 ) ' .0 3 2 ( 0 .3 1 ) (2 .4 9 ) NOW. OPTICAL Ç. • r T

Contextual Info: SbE D • BDSGbQ'ì 0 0 0 1 1 2 1 7ÔB ■ VCT VT0340S Rev. B SILICON PHOTODIODE J ^ E G zG VACTEC VTD34 OPTOELECTRONICS BPW 34 INDUSTRY EQUIVALENT E 6 8t G V A C T E C T-41-51 PRODUCT DESCRIPTION FEATURES • This P on N photodiode is designed to provide

bpw 50

Abstract: PerkinElmer fyd-1150 K/PerkinElmer fyd-1150
Contextual Info: SILICON PHOTODIODE VTD34FSMH BPW 34F INDUSTRY EQUIVALENT PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Infrared transmiting package • High sensitivity Planar silicon photodiode in an infrared transmitting, visible blocking molded plastic package.

VTD34H

Abstract: BPW34 BPW34 application note BPW34 application BPW34 circuit
Contextual Info: Alternate Source/ Second Source Photodiodes VTD34H BPW34 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a transparent molded

Contextual Info: SILICON PHOTODIODE VTD34FSMH BPW 34F INDUSTRY EQUIVALENT PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Infrared transmiting package • High sensitivity Planar silicon photodiode in an infrared transmitting, visible blocking molded plastic package.

Contextual Info: VTD34 Alternate Source/ Second Source Photodiodes B P W 3 4 IN D U S T R Y E Q U IV A L E N T PACKAGE DIMENSIONS inch (mm) 182 ( * .6 2 ) , _ ( 0 .5 8 ) ( 3 .3 0 ) .0 4 2 ( 1 .0 7 ) .0 3 9 (1.00)' .0 3 2 ( 0 .8 1 ) ( 2 .4 9 ) NOM. OPTICAL <1 Ic a t h o d e K

Contextual Info: Alternate Source/ Second Source Photodiodes VTD34FH BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light

VTD34FSM

Abstract: bpw photodiode
Contextual Info: SILICON PHOTODIODE VTD34FSM BPW 34F INDUSTRY EQUIVALENT PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Infrared transmiting package • High sensitivity Planar silicon photodiode in an infrared transmitting, visible blocking molded plastic package.

BPW34

Abstract: VTD34
Contextual Info: VTD34 Alternate Source/ Second Source Photodiodes BPW 34 IN DU STRY EQUIVALENT P A C K A G E DIMENSIONS inch (mm) 182 ( * .6 2 ) , (0 .5 8 ) .0 39 .0 9 8 ( 1.0 0 ) ' ( 2 .4 9 ) NOM. _ ( 3 .3 0 ) .0 4 2 ( 1 .0 7 ) .0 3 2 ( 0 . 8 1 ) ' OPTICAL £ I r •f

940 nm

Abstract: BPW34F VTD34F
Contextual Info: Alternate Source/ Second Source Photodiodes VTD34F BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light

BPW34 application note

Abstract: BPW34 VTD34
Contextual Info: Alternate Source/ Second Source Photodiodes VTD34 BPW34 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a transparent molded

VTD34FH

Abstract: BPW34F
Contextual Info: Alternate Source/ Second Source Photodiodes VTD34FH BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light

Contextual Info: VTD34F Alternate Source/ Second Source Photodiodes BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) 182 (¿ .6 2 ) 172 (4 .3 7 )j ( 0 .5 8 ) ( 3 .3 0 ) .0 4 2 ( 1 .0 7 ) .0 3 9 ( 1 .0 0 ) ' .0 3 2 ( 0 .8 1 ) ( 2 .4 9 ) NOW. O P T IC A L Ç. } Ic a t h o o e K

Contextual Info: Alternate Source/ Second Source Photodiodes VTD34 BPW34 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a transparent molded

VTD34SMH

Abstract: VTD34SM
Contextual Info: SILICON PHOTODIODE VTD34SMH FEATURES PRODUCT DESCRIPTION • High sensitivity • Low capacitance This P on N photodiode is packaged in a transparent plastic package with the leads configured for surface mounting. • Fast response • Low noise • High shunt impedance

Contextual Info: Alternate Source/ Second Source Photodiodes VTD34H BPW34 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a transparent molded

SFH205

Abstract: BPW34F VTD205 VTD34F SECOND SOURCE
Contextual Info: Alternate Source/ Second Source Photodiodes VTD34F BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

VTS3082

Abstract: 476 20k cap VTL5C3 980-2675 VTS3085 VTP1188S 980-0004 photoconductive cells VT935G vactrol
Contextual Info: PerkinElmer Photoconductive Cells, Emitters, Photo Diodes/Transistors, Optoisolators Photoconductive Cells Silicon Photodiodes Electrical/Optical Characteristics @ 25¡C Photoconductive cells provide a very economical and technically superior solution for many light level

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0

vacuum breaker

Abstract: SWITCHGEAR capacitor 104 12KV vacuum interrupter ZW20 vtf31 400ka INTERRUPTER SWITCH 100N ZW10
Contextual Info: Vacuum Interrupter Vacuum interrupter for outdoor circuit breaker /12 ZW6 ZKTD 630/12-20 VTD3142A ZW6 ZKTD 630/12-12.5 ZW6 ZKTD 630/12-16 ZW6 ZKTD 630/12-20 Main technical data Rated voltage Rated current Rated frequency Rated short-time power frequency withstand voltage (1 min)