20YEARS Search Results

tcxo 108

Abstract: TCXO L TCXO 68 MHZ
Contextual Info: TC Type Stratum III Voltage Controlled Temperature Compensated Crystal Oscillator RoHS Compliant Standard FEATURE 1.Typical 7.0 x 5.0 x 1.85mm ceramic SMD package. 2.Stratum 3 Overall ±4.6PPM including 20years aging 3.CMOS and Clipped Sine wave Output Optional.

Contextual Info: 5V CMOS TCXO Stratum 3 HTFH & HTVH Specifications Product Parameters HTFH HTVH Frequency range: 6.40 ~ 56.0MHz ࡯ ࡯ Calibration tolerance: ±1.0ppm ࡯ ࡯ Frequency stability: ±4.6ppm inclusive of calibration tolerance temperature, voltage, load, 20years

Contextual Info: 3.3V CMOS TCXO Stratum 3 HTFL & HTVL Specifications Product Parameters HTFL HTVL Frequency range: 6.40 ~ 56.0MHz ࡯ ࡯ Calibration tolerance: ±1.0ppm ࡯ ࡯ Frequency stability: ±4.6ppm inclusive of calibration tolerance temperature, voltage, load, 20years

Contextual Info: 5V CMOS TCXO Stratum 3 HTFH & HTVH Specifications Product Parameters HTFH   ±1.0ppm   Frequency stability: ±4.6ppm inclusive of calibration tolerance temperature, voltage, load, 20years ageing, shock & vibration  

Contextual Info: 3.3V CMOS TCXO Stratum 3 HTFL & HTVL Specifications Product Parameters HTFL   ±1.0ppm   Frequency stability: ±4.6ppm inclusive of calibration tolerance temperature, voltage, load, 20years ageing, shock & vibration  

MR0A16A

Abstract: 64Kx16 SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35
Contextual Info: MR0A16A 64Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System

tsop 48 PIN type2

Abstract: 48BGA MR0A16AMA35
Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature

0.35mm pitch BGA

Abstract: MR4A08BCYS35R MR4A08B MR4A08BC mr4a08bcys MR4A08BCYS35
Contextual Info: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages

Contextual Info: TX-500 Temperature Compensated Crystal Oscillator TX-500 Features Applications • Low Phase Noise • Low power consumption • Output: HCMOS, Clipped Sinewave, PECL, True Sinewave • Tight Tolerances • Frequency range 1 of 6.4 - 160 MHz • Standard Frequencies : 10, 12.8, 16.384, 19.44, 19.2, 20, 26

JESD22-A101

Abstract: IEC68-2-27 VCXO-7050 VCXO-7050L IEC-68-2-27 IEC-682-6
Contextual Info: VCXO-7050/7050L Miniature VCXO Geared to Broadband •Features ¡“Small Size” as small as 0.063cc. 5x7×1.8mm ¡Using 1 chip HCMOS IC. ¡3-state devices are available. ¡APR (Absolute Pull Range) of up to ±50ppm or ±100ppm*2. ■Typical Applications

Contextual Info: Temperature Compensated Crystal Oscillators TCXO Surface Mount Type TCXO (LSI Type) KT5032 Series for Femtocell/ Stratum3 Features How to Order For Femtocell (Standard Spec.) • High stability and high reliability • 2.7 to 5.5V drive available • Clipped sine wave or CMOS level

Contextual Info: FM25Q08 FM25Q08 8M-BIT Serial Flash Memory with 4KB Sectors, Dual and Quad I/O SPI preliminary Aug.18.2010 1 FM25Q08 Documents title 8M bit Serial Flash Memory with 4KB Sectors, Dual and Quad I/O SPI Revision History Revision No. 0.0 0.1 History Initial Draft

FM25Q16

Contextual Info: FM25Q16 FM25Q16 16M-BIT Serial Flash Memory with 4KB Sectors, Dual and Quad I/O SPI Rev.06 Aug.18. 2010 1 FM25Q16 Documents title 16M bit Serial Flash Memory with 4KB Sectors, Dual and Quad I/O SPI Revision History Revision No. 0.0 0.1 0.2 0.3 0.4 0.5 0.6

Contextual Info: FREQUENCY Oven Controlled Crystal Oscillator for Switching applications rev-W3 Specifications Parameters F r eq u en c y Oven Controlled Crystal Oscillator for Switching applications (rev-W3) July 27, 2006 Specifications Ref Parameters 1 2 2.1 2.2 3 4 4.1

temex ocxo

Abstract: ocxo temex
Contextual Info: FREQUENCY Oven Controlled Crystal Oscillator for Switching Stratum 3 and DSL applications rev-W3 Specifications Parameters F r eq u en c y Oven Controlled Crystal Oscillator for Switching Stratum 3 and DSL applications (rev-W3) July 27, 2006 Specifications

Contextual Info: ACE25C100 1M-BIT Serial Flash Memory Description The ACE25C100 is a 1M-BIT 128K-byte Serial Flash memory, with advanced write protection mechanisms. The ACE25C100 supports the standard Serial Peripheral Interface (SPI), and a high performance Dual output as well as

Contextual Info: Ordering number : ENA1678B LE25CA322 Serial SPI EEPROM SPI Bus (32Kbit) Overview The LE25CA322 is a 32Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is

LE25LB2562

Contextual Info: Ordering number : ENA1435A LE25LB2562M 256Kbit Serial SPI EEPROM SPI Bus Overview The LE25LB2562M is a 256Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is

Contextual Info: MR256D08B Dual Supply 32K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature

VC-FXO-35F

Abstract: VC-FXO-35FL VC-FXO-65F VCXO-7050 kss 20MHZ KSS 14318
Contextual Info: Voltage Controlled Crystal Oscillators VCXO Surface Mount Type KV5032A Series (VC-FXO-65F Series) CMOS / 3.3V / 5.0V / 5.0x3.2mm Features • Surface mount type suitable for auto pick-and-place. • Reflow soldering compatible. • Supply voltage VDD3.3/5.0V available

Contextual Info: STRATUM -III SMD VCTCXO AST3 Pb RoHS Compliant FEATURES: FEATURES: • High Precision over temperature ±0.-37 ppm over -40°C to + 85°C • Excellent long term stability (±4.60 ppm Max. over 20-Year life) • Small Profile (7*5*2 mm) • Low Power (< 6mA CMOS; < 3.5mA Sinewave)

Contextual Info: STRATUM -III SMD VCTCXO AST3 Pb RoHS Compliant FEATURES: FEATURES: • High Precision over temperature ±0.37 ppm over -40ºC to + 85ºC • Excellent long term stability (±4.60 ppm Max. over 20-Year life) • Small Profile (7*5*2 mm) • Low Power (< 6mA CMOS; < 3.5mA Sinewave)

Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V

S29WS128J-MCP

Abstract: S29WS128J S29WS-J S29WS064J
Contextual Info: S29WS-J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet S29WS-J Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,