VTP10 Search Results

Contextual Info: VTP Process Photodiodes VTP100H PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).

VTP8651

Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Contextual Info: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).

VTP1012

Contextual Info: VTP Process Photodiodes ,r r VTP1012 PACKAGE DIMENSIONS inch mm> CASE 17 PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window TO-46 package. Cath­ ode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.

VTP1012

Contextual Info: VTP Process Photodiodes VTP1012 PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is common to

VTP1012

Abstract: VTP1013
Contextual Info: BDBDbD^ GGDlObb Tb5 H V C T 5b E D VTP Process Photodiodes VTP10 12 , 1013 E 6 & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm .1 5 4 ( 3 . 9 1 ) 1 .0 0 ( 2 5 . 4 ) CASE 17 PRODUCT DESCRIPTION Small area planar silicon photodiode in a "flat" window TO-46 package. Cathode

Contextual Info: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).

Contextual Info: VTP Process Photodiodes VTP1012H PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is common to

Contextual Info: VTP Process Photodiodes VTP100CH PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and

VTP1013

Abstract: VTP1012
Contextual Info: 5bE D • BDBDbD^ □□OlQbb TbS H V C T VTP Process Photodiodes E 6 8, G VTP1012, 1013 VACTEC T -4 1 -5 1 PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERME11C CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in

VTP100C

Abstract: VTP-100C
Contextual Info: VTP Process Photodiodes VTP100C PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and

VTP1012H

Contextual Info: VTP Process Photodiodes VTP1012H PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is common to

Contextual Info: SbE D 3030b0^ ODGlGbB E S b IVCT VTP100A VTP Process Photodiodes E 6 8, G VACTEC T-41-51 PACKAGE D IM EN SIO N S inch mm .7 5 ( 1 9 . 1 ) CATH ODE M ARK 4 5 ° X .0 3 5 ( 0 . 8 9 ) - , r• M IN IM U M \T(T57)f . 2 3 0 (5 . 8 4 ) SE N SIT IV E CATHODE . 2 1 0 (5 . 3 3 )

lo13

Abstract: VTP100 K3555 Gaa 725
Contextual Info: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CATHODE MARK 1 .0 0 4 5 ° X .0 3 5 ( 0 . 8 9 ) ( 2 5 . 4 )I MINIM UM C A T H O D E . •2 3 0 ( 5 . 84 .) .2 1 0 ( 5 . 3 3 ) SENSITIVE 1 + ♦_ SURfACE ANODE .285 (7.24) .265 (6 .73 )' .020 .

Contextual Info: VTP Process Photodiodes VTP100C PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and

VTP100CH

Contextual Info: VTP Process Photodiodes VTP100CH PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and

VTP100A

Contextual Info: 5bE D 3G30bCH OODlObB 2 5 b VCT VTP100A VTP Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm .7 5 ( 19 . 1 ) CATHODE MARK 4 5 ° X .0 3 5 ( 0 . 8 9 ) - r • MINIMUM NOM. - .2 3 0 ( 5 .« 4 ) SENSITIVE .2 1 0 ( 5 .3 3 ) SURFACE CATHODE

ID12

Abstract: VTP100C
Contextual Info: VTP100C VTP Process Photodiodes i P A C K A G E DIMENSIONS inch mm catho de; 1 .0 0 ( 2 5 . 4 ) m ark 4 5 ° X .0 3 5 ( 0 .8 9 ) .2 3 0 < 5 .8 4 ) SENSITIVE .2 1 0 ( 5 . 3 3 ) SURFACE _ i ANODE .2 8 5 (7 .2 4 ) •020 s ■105 ( 2 . 6 7 ) .2 6 5 (6 .7 3 )

VTP100

Contextual Info: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).

Contextual Info: VTP100 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm C ATH O DE M ARK 45° X 1 .0 0 .0 3 5 ( 0 . 8 9 ) \ (2 5 .4 ) M IN IM U M CATHO DE „ .2 3 0 (5 .8 4 ) S E N S IT IV E .2 1 0 ( 5 . 5 3 ) SU RFACE + j_ ANODE •285 (7 .2 4 ) ■020 .2 6 5 ( 6 . 7 3 )

Contextual Info: VTP100C VTP Process Photodiodes P A C K A G E DIMENSIONS inch mm c a th o d e : m a r k 1.00 (25.4) 4 5 ° X .035 (0.8 9 ) .230 (5.84) SENSITIVE .210 (5.33) Ì SURFACE + _ ANODE .285 (7.24) c •105 (2.6 7 ) ( 0 .5 1 ) " .095 (2.4 1 ) ■0 2 0 .265 (6.73)

1150 5

Contextual Info: VTP Process Photodiodes VTP1012 PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is common to

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

269EG

Abstract: UR620
Contextual Info: OFF-LINE SWITCH MODE TRANSFORMERS Indicated Parts are UL1950 & CSA-950 Recognized under UL File# E162344 * Designed for Use with Power Integrations IC's. * Designed to Meet UL1950/IEC950 Safety Standards. * Design Engineering Support Available. * Multiple Configurations.

FM3164

Abstract: FM3104-S FM31256 FM3104 FM3116 FM3116-S FM31256-S FM3164-S 4558 dd SN40
Contextual Info: Product Preview FM3104/16/64/256 Integrated Processor Companion with Memory Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory • Real-time Clock RTC • Low Voltage Reset • Watchdog Timer • Early Power-Fail Warning/NMI