3030B0 Search Results

VTB6060B

Abstract: VTB6061B
Contextual Info: 5bE D 3030b0S DODlOHb 177 H V C T V T B 6 0 6 0B , 6061 B VTB Process Photodiodes E G & G VACTEC T -41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a “flat" window, dual lead TO-8 pack­ age. The package incorporates an in­

Pyroelectric Detectors

Abstract: J15TE HgCdTe judson PA-100 judson PA-090
Contextual Info: E G & G 3TE T> m JUDSON J15TE Series 3030b0S 00 002 37 7 B J U D Long-Wave Mercury Cadmium Telluride Detectors 10.6 jam T - V / 'V / General • J15TE Series "Long-Wave" detectors are photoconductive HgCdTe elements on thermoelectric coolers for C 0 2 laser

Contextual Info: SbE D 3030b0^ ODGlGbB E S b IVCT VTP100A VTP Process Photodiodes E 6 8, G VACTEC T-41-51 PACKAGE D IM EN SIO N S inch mm .7 5 ( 1 9 . 1 ) CATH ODE M ARK 4 5 ° X .0 3 5 ( 0 . 8 9 ) - , r• M IN IM U M \T(T57)f . 2 3 0 (5 . 8 4 ) SE N SIT IV E CATHODE . 2 1 0 (5 . 3 3 )

Contextual Info: 5bE D 3030b0^ 0001102 fiSb H V C T VTS VTS-2 Process Photodiodes 86, 87, 90 E G & G VACTEC PRODUCT DESCRIPTION T-41-51 PACKAGE DIMENSIONS inch mm Large area planar silicon photodiodes suitable for use in the photovoltaic mode, but may be used with a small

45016m

Abstract: J12-18C-R250U J12D-M204-R01M J12-18C-R01M J12D-M204-R02M metal detectors circuit HgCdTe PbSe Judson judson PA-100 J12-18C
Contextual Info: E G S G JUI1S0N 31E D m 3030b05 D0D0225 □ • JlID T -V /-V / Indium Arsenide Detector Operating Notes General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.6 urn wavelength range.

HgCdTe

Abstract: judson PA-100 j15te PbSe Judson J15TE2 HGCDTE detector J15TE3 laser detector 5-8B6-S01M PA100
Contextual Info: E G & G IH JUDSON E ^ T C I 3TE D • ■ 3030b05 0000235 3 H J U D Short-Wave Mercury Cadmium Telluride Detectors 2 to 5 jam w I w I C Series Figure 24-1 Typical Detectivity vs Wavelength lor J15TE Series Short-Wave HgCdTe Detectors General J15TE Series ’’Short-Wave" detectors

fanning strip

Abstract: 100-pair private automatic branch exchange Model CG 100 A CG-303 B 303 D 303-0B103
Contextual Info: Features • Front-facing configuration - easy access to protector modules, jumper field and test field ■ Industry-standard design accepts all standard 303-type protector modules and testing equipment ■ Integral fanning strip helps maintain neat and orderly wiring

J18TE2-66G-R01M-2.6

Abstract: InGaAs J18TE2-66G J18TE2-66G-R01M-1 480067 J18TE1-37S-R02M-1 J18TE2-66G-R250U-2 480051 12Xl J18TE4-3GN-R01M-2
Contextual Info: ¿ L e G s G J U P SO N Extended inGaAs Photodiodes 0.8 to 2.6 ¡am 1.9Hm Therm oelectrically Cooled Extended InGaAs Detectors Model Number Cutoff Shunt Part Active Operating W ave­ ResponResistance Num ber Size Tem per­ leng th sivity Rd D ia. ature (50%)

VTL23G2B

Abstract: VTL23G3B OPTICAL INTERRUPTER position Photo interrupter application notes
Contextual Info: Transmissive Optoswitch VTL23G2B, 23G 3B Slotted Switch — Schmitt Output PRODUCT DESCRIPTION This series of interrupter type transmissive optoswitches combines an infrared emitting diode IRED with a TTL compatible, Schmitt output, photo 1Cdetector in an opaque plastic case with

VTL3B18

Abstract: vactrol VTL3B48 MQ-5
Contextual Info: V TL 3B 48 Low Cost Neon Axial Vactrols PACKAGE DIM EN SIO NS inch mm UL Listed File #E738B7 Dual ‘ center tap- element version is available lor VTL3B48. DESCRIPTION V T L 3 B 4 8 features a low "on" resistance and fast turn-on tim e, with a smaller temperature

VTL13D7-20

Abstract: VTL-1307 VTL13D7 VTL1306-20 VTL13D1 VTL13D1-20 VTL13D3 VTL13D3-20 VTL13D5-20 pj 81 diode
Contextual Info: Transmissive Optoswitch VTL13D1 - 07 Slotted Sw itch — .395 High PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches com bines an infrared emitting diode IRED with an N PN phototransistor in a one piece, sealed, IR transmitting plastic case.

InGaAs photodiode

Abstract: Photodiode Array linear focal plane array J18M PHOTODIODE current voltage amplifier array 16 Photodiode-Array linear array photodiode element photo diode array photo diode array amplifier photodiode linear array
Contextual Info: ^ EGgG JU D SO IM _ Multiplexed InGaAs Photodiode Arrays 0.8 to 1.7 jim Description The J18M Series detector is a self-scanned Indium Gallium Arsenide array with response to wavelengths ranging from 800 nm to 1700 nm. The array has elem ents

Photo interrupter application notes

Abstract: VTL23G2A VTL23G3A OPTICAL INTERRUPTER position VTL23
Contextual Info: Transmissive Optoswitch VTL23G2A, 23G3A Slotted Switch — Schmitt Output PRODUCT DESCRIPTION This series of interrupter type transmissive optoswitches combines an infrared emitting diode IRED with a TTL compatible, Schmitt output, photo 1Cdetector in an opaque plastic case with

HgCdTe

Abstract: PbSe Judson J12TE3-66S-R250U J12TE3-66S-R01M detector active area size nep fast light detector Photodiodes Germanium LF356 OP27 OPA111
Contextual Info: n Indium Arsenide Detector Operating Notes 1.0 to 3.8 |im General Responsivity Tem perature Effects J12 Series detectors are high-quality Indium A rsenide photodiodes for use in the 1 to 3.8 jim w avelength range. The equivalent circuit is a photon­ generated current source I h w ith parallel

J16-18A-R01M-HS

Abstract: J16-8SP-R05M-HS J16-18A-R01M germanium photodiode
Contextual Info: J ^ E G zG JU D SO N Germanium Detector Operating Notes 0.8 to 1.8 jim 'f§jjpilljf!' Biii 'viflnJP General Responsivity Operating Circuit J16 Series detectors are high-quality G erm anium photodiodes designed for the 800 to 1800 nm w avelength range. The equivalent circuit for a G erm a­

vactec vactrol

Abstract: vactrol neon vactrol VTL3B18 Vactec Vactec 25 Vactec photocell axial vactrols
Contextual Info: V TL 3B 18 Low Cost Neon Axial Vactrols PACKAGE DIMENSIONS inch mm UL Listed File # E73887 DESCRIPTION Th is lo w cost, axial V actrol fe atu re s very fa s t speed of respo nse a n d a large "on" resistance to "off 1res ista n c e d y n a m ic range, a lo n g w ith a

IC 7405

Abstract: FFD-100 FFD-040B FFD-200 7405 FFD-040 SALEM FFD-040A
Contextual Info: E G & G JUDSON S7E D • OQOQiaT □ ■ 3030bQ5 T " 4 /-'5 i F S e rie s FFD-040;FFD-100;FFD-200 Features • • • • Low Operating Voltage High Responsivity Ultra-Fast Rise and Fall Time Isolated Photodiode Chip • Large Active Area • Wide Spectral Range

VTT9012

Abstract: VTT9112 VTT1010 VTT9313 Vcn-50V VTT1013 VTT1031 bd 7122 VTA3121 31T52
Contextual Info: V TT A -3B VTT PHOTODARLINGTONS VTA c h ip s VTA-C/VTT-C MATCHED LED-TRANSISTORS VTM PHOTOTRANSISTORS J^ E G zG V A C TE C OPTOELECTRONICS 10900 PAGE BLVD. ST. LOUIS, MO. 63132 USA • • • TWX 910-764-0811 PRODUCT DESCRIPTION FEATURES • • PHONE 314-423-4900

J16-18A-R01M-SC

Abstract: J16-8SP-R05M J16-5SP-R02M-HS J16-5SP-R02M-SC photodiode ge J16-18A-R01M photodiode germanium J16-18A-R01M-HS J16-5SP-R03M-HS germanium diode equivalent
Contextual Info: Germanium Detector Operating Notes 0.8 to 1.8 ¡im General Responsivity Operating Circuit J1 6 S eries d etectors are hig h -q u ality G erm an iu m photodiodes designed for th e 800 to 1800 n m w avelen g th range. T he eq u iv alen t circu it for a G erm a­

HgCdTe

Abstract: ci 4012 3xl08 J15TE3 J15TE4 "Thermoelectric Cooler" J18TE2-66G laser detector Quality Thermistor J18TE2
Contextual Info: Long-Wave MCT Detectors 1 0 . 6 | im General • J15TE4:10 Series J 1 5 T E S eries "Long-W ave" detectors are photoconductive HgCdTe elem ents on therm oelectric coolers for C 0 2 la se r detection a t 10.6jj.m. The H gCdTe detectors offer significant advantages over altern ativ e pyroelectric

Contextual Info: Thermoelectrically Cooled Ge Detectors 0.8 to 1.8 |im General • J16TE2 Series J16TE Series detectors are Judson's high-quality Ge photodiodes m ounted on therm oelectric coolers for reduced d ark current, im proved sensitivity, and superior stability. See general operating

YAG100A

Abstract: YAG-100 specifications ic 7405
Contextual Info: E G & G JUDSON 27E D • 3G3GbOS 0G 0 0 1 7 7 4 ■ YAG Series Features • • • • • • • • Planar Diffused Large Area Wide Dynamic Range > 5 0 % DC Quantum Efficiency at 1064 nm • Oxide Passivated Wide Spectral Range > 9 0 % DC Quantum Efficiency at 900 nm

InGaAs photodiode

Abstract: photodiode 256 elements photodiode linear array 256 focal plane array pin PA1300 photodiode 512 elements
Contextual Info: J k EGgG JUDSON Description The J18M Series detector is a self-scanned Indium Gallium Arsenide array with response to wavelengths ranging from 800 nm to 1700 nm. The array has elements configured in a linear orientation with standard array lengths in excess of one inch.

lf356 op-amp

Abstract: judson PA-100 thermistor inas
Contextual Info: E 6 8 6 JUJSON b =IE D • 3D3Db05 0000225 G ■ JUD T -V /-V / Indium Arsenide Detector Operating Notes General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.6 urn wavelength range.