INGAAS Search Results

thermistor 054

Contextual Info: TOSHIBA -CLASER/FBR O P T I O DIE D • ^0^7552 001^105 3 « T O S b . T-4Ì-5Q TOSHIBA PIN PHOTODIODE TOPD320 Features • • • • • • • InGaAs PIN Structure Mesa Type i4.6mm Window Package Wavelength 0.8~1.6//m High Speed 0.5ns Max Low Dark Current 10nA Max

DL5551P2

Abstract: NDL5516PC
Contextual Info: DATA SHEET PHOTO DIODE NDL5506P Series 0 50 ¿¿in InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NDL5506P Series is an InGaAs avalanche photodiode module with Internal therm oelectric cooler. This series Is available In multimode or single mode fiber. It covers the wavelength range between 1 000 and 1 600 nm with high

nec 151

Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.

NX7526BF-AA

Abstract: NX7526BF-AA-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE NX7526BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 95 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 95 mW MIN at IFP = 1000 mA Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1% NEC's NX7526BF-AA is a 1550 nm Multiple Quantum Well

FP-Laser-Diode

Abstract: 10 gb laser diode UNCOOLED MQW-FP LD
Contextual Info: 10Gbps 1310 nm MQW-FP Laser Diode Module-TOSA C-13-010-TJ-SXCMI -01 Features • Uncooled FP Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for

PIN Photodiode 1550nm

Abstract: PIN-TIA 5v InGaAs Photodiode 1550nm
Contextual Info: 1550nm Emitting , 1310nm Receiving PIN-TIA, 5V , Bi-directional Diplexer Optical Module C-15/13-F01/03/05- PX-SXXX/XXX Features • Single-fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with TIA

nec 501 t

Abstract: NX8563LA NX8563LA-AZ NX8563LAS
Contextual Info: DATA SHEET NEC's DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS NX8563LA Series FEATURES DESCRIPTION • PEAK OUTPUT POWER NEC's NX8563LA Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser

PRBS23

Abstract: 25gbps pin-tia pxxx PIN-TIA
Contextual Info: 2.5Gbps PIN-TIA Receiver ModulesReceptacle & Pigtailed 5V T-11-2500-R/P-XXX Features • InGaAs/InP PIN Photodiode with transimpedance amplifier • High sensitivity with AGC* • Differential ended output • Single+5V operation • -40 to 85ºC operating temperature

GR-468-CORE

Abstract: NX7313UA NX7313UA-AZ
Contextual Info: NEC's 1310 nm InGaAsP MQW FP TOSA NX7313UA FOR GIGABIT ETHERNET APPLICATION FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: Pf = 0.6 mW NEC's NX7313UA is a 1310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode transmitter optical subassembly (TOSA) with InGaAs monitor PIN-PD in a receptacle type package designed for LC type SFF/SFP transceiver

1550nm laser diode

Abstract: sxxxx InGaAs Photodiode 1550nm
Contextual Info: 1550nm Laser Diode Module C-15-001-T/R/PX-SXXXX/XXX-X Features • Laser diode with multi-quantum-well structure • Un-cooled operation at -40 to +85ºC • Built-in InGaAs monitor photodiode • Hermetically sealed active component • Complies with Bellcore TA-NWT-0009853

PIN Photodiode 1550nm sensitivity -55

Abstract: PIN-TIA PIN-TIA 5v InGaAs Photodiode 1550nm 13D01
Contextual Info: 1550nm Emitting DFB , 1310nm Receiving (PIN-TIA, 5V) , Bi-directional Diplexer Optical Module C-15/13-D01/03/05- PX-SXXX/XXX Features • Single fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with TIA

NX8570SD

Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Contextual Info: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

GD-30

Abstract: InGaAs HEMT mitsubishi
Contextual Info: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.

GD-30

Abstract: MGF4931AM 77153
Contextual Info: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

T-11-2500A-P3-MFC

Abstract: T-112500A-P3-S T-11-2500A-P3-SFC T-11-2500A-R3-SFC T-11-2500A-R3-SSC T-11-2500A-R3-SST
Contextual Info: 2.5 Gbps PIN-TIA Receiver Modules 3.3 V Preliminary T-11-2500A-R3-SFC/ ST/ SC • T-11-2500A-P3-S/ SFC/ SSC/ SST • T-11-2500A-P3-M/ MFC/ MSC/MST Features • InGaAs/ InP PIN Photodiode with transimpedance amplifier • High sensitivity with Auto Gain Control (AGC)

PRBS 223-1

Contextual Info: 1.25 Gbps PIN-TIA Reciever 3.3V/5V T-11-1250-G/3-B Features • InGaAs/InP PIN Photodiode with transimpedance amplifier • High sensitivity with AGC • Differential ended output • Single +3.3V/5V operation • -40 to 85ºC operating temperature • Integrated 4-pin TO-46 ball lens cap package

Contextual Info: Analog 1310 nm MQW-DFB Laser Diode Module C-13-DFBA-PX-SXXXI/XXX-X Features • Laser diode with multi-quantum-well structure • Un-cooled operation at 0 to +70ºC • Built-in InGaAs monitor photodiode • Hermetically sealed active component • Complies with Bellcore TA-NWT-000983

ROSA

Abstract: PIN-TIA T-11-622-D-SLC T-11-622-D-SMU T-11-622-D-SSC
Contextual Info: 622Mbps PIN-TIA Receiver Modules-ROSA 5V T-11-622-D-SXX Features • InGaAs/InP PIN Photodiode with transimpedance amplifier • High sensitivity with AGC* • Differential ended output • Single +5V operation • -40 to 85ºC operating temperature • SC/LC/MU ROSA package

IMD2

Abstract: NDL5481PD NDL5481P1D NDL5481P2 NDL5481P2C NDL5481P2D NDL5481PC NDL5481P NDL5481P1 NDL5481P1C
Contextual Info: 1300 nm OPTICAL ANALOG CATV SYSTEM φ80 µm InGaAs PIN PHOTO DIODE WITH SMF NDL5481P SERIES FEATURES DESCRIPTION • SMALL DARK CURRENT: ID = 0.1 nA The NDL5481P Series is an InGaAs PIN photo diode module with single mode fiber. It is designed for analog transmission

C-151-DFB-E-XX-NT

Contextual Info: 1510nm MQW-DFB Laser Diode C-151-DFB-E-XX-NT Features • Uncooled laser diode with MQW structure • 5mW CW operation at 0 to +70ºC • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode

LD connector SC

Abstract: NX8501 NX8501AC NX8501AC-BA NX8501AC-CA NX8501BC NX8501BC-BA NX8501BC-CA NX8501CC NX8501CC-BA
Contextual Info: 1510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE NX8501 SERIES FEATURES DESCRIPTION • PEAK WAVELENGTH: λP = 1510 nm The NX8501 Series is a 1510 nm phase-shifted DFB Distributed Feed-Back laser diode with single mode fiber. The

NX6506

Abstract: NX6506GH NX6506GH-AZ NX6506GK NX6506GK-AZ
Contextual Info: NECʼs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6506 SERIES FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 10 mA • DIFFERENTIAL EFFICIENCY: ηd = 0.25 W/A • SIDE MODE SUPPRESSION RATIO:

PRBS23

Abstract: 25gbps pin-tia
Contextual Info: 2.5Gbps PIN-TIA Receiver ModulesReceptacle & Pigtailed 3.3V T-11-2500-P3/R3-XXX Features • InGaAs/InP PIN Photodiode with transimpedance amplifier • High sensitivity with AGC* • Differential ended output • Single+3.3V operation • -40 to 85ºC operating temperature

NX7328BF-AA

Abstract: NX7328BF-AA-AZ
Contextual Info: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE NX7328BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 70 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 110 mW at IFP = 400 mA, Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1%. NEC's NX7328BF-AA is a 1310 nm Multiple Quantum Well