IMD2 Search Results

Contextual Info: EMD2 / UMD2N / IMD2A Transistors General purpose dual digital transistors EMD2 / UMD2N / IMD2A zExternal dimensions (Unit : mm) (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMD2 (1) 1.2 1.6 0.5 0.13 zFeatures 1) Both the DTA124E chip and DTC124E chip in a EMT

Contextual Info: EMD2FHA / UMD2NFHA / IMD2AFRA EMD2 / UMD2N / IMD2A NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet AEC-Q101 Qualified <For DTr1(NPN)> lOutline Parameter VCC IC(MAX.) R1 R2 Value EMT6 50V 100mA 22kW 22kW (6) (1) EMD2 EMD2FHA

Contextual Info: RF1480 SP8T SWITCH VDD SPI_CS SPI_CLK SPI_DATA AUX_SPI_VDD RoHS Compliant & Pb-Free Product Package Style: QFN, 20-pin, 3.5mmx3.5mm 20 19 18 17 16 Features ANT VDD =1.5V to 3.0V ̈ AuxSPI VDD =1.5V to 3.0V ̈ High Linearity IMD3 <108dBm, IMD2 <-103dBm Harmonics: -83dBcat1GHz

DTA124E

Abstract: DTC124E T110
Contextual Info: EMD2 / UMD2N / IMD2A Transistors General purpose dual digital transistors EMD2 / UMD2N / IMD2A zExternal dimensions (Unit : mm) (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMD2 (1) 1.2 1.6 0.5 0.13 zFeatures 1) Both the DTA124E chip and DTC124E chip in a EMT

DTA124E

Abstract: DTC124E T148
Contextual Info: EMD2 / UMD2N / IMD2A Transistors General purpose dual digital transistors EMD2 / UMD2N / IMD2A !External dimensions (Units : mm) (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMD2 (1) 1.2 1.6 0.5 0.13 !Features 1) Both the DTA124E chip and DTC124E chip in a EMT

Contextual Info: SPICE PARAMETER IMD2A * IMD2A_NPN NPN DT model * Date: 2007/01/11 * BJT with resistors *C B E .SUBCKT IMD2A_NPN 1 2 3 R1 2 Base Rb 22k R2 Base 3 Re 22k Q1 1 Base 3 QDTC1 .MODEL Rb RES + R=1 .MODEL Re RES + R=1 .MODEL QDTC1 NPN + IS=20.000E-15

Contextual Info: IMD2 /T ra n s is to rs IM D2 7 < V U — ~t ~ " j K $ — " E — J U K ~ f / ’v / X •i >/'v — *1 F y ' f /Vlnverter Driver Isolated Mini-Mold Device V r > J V ; V d i- r 1 1 SMT SC-59) < t( s ) - W S C 2f@C7) h A'"A T i ' -5 o -3 2) U, f £ 7 '< f c - 5 0

22KQ

Contextual Info: Transistors Digital Transistor Isolated Dual Digital Transistors UMD2N / IMD2A •E x te rn a l dimensions (Units: mm) UMD2N 2.0±0.2 2.9±0.2 1.3±0.1 0.7 C i t tîli3)[îl(2)[t1(1) +0.1 0.15±0.05 I 0.3-1,0.05 All terminals have same dimensions ^= D = l

Contextual Info: EMD2 / UMD2N / IMD2A NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline <For DTr1(NPN)> Parameter VCC IC(MAX.) R1 R2 Value EMT6 UMT6 (6) (6) (5) (5) 50V 100mA 22kW 22kW (4) (4) (1) (1) (2) (2) (3) (3) EMD2 (SC-107C)

DTC124

Abstract: DTA124E DTC124E T110 *C124e li20 dta124
Contextual Info: EMD2 / UMD2N / IMD2A Transistors General purpose dual digital transistors EMD2 / UMD2N / IMD2A zExternal dimensions (Unit : mm) (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMD2 (1) 1.2 1.6 0.5 0.13 zFeatures 1) Both the DTA124E chip and DTC124E chip in a EMT

IMD23

Abstract: DTB113Z DTC114E T110
Contextual Info: IMD23 Transistors General purpose dual digital transistors IMD23 zExternal dimensions (Unit : mm) (1) (2) (3) 0.95 0.95 1.9 2.9 (6) (4) (5) 0.3 IMD23 1.6 0.8 0to0.1 0.3to0.6 1.1 2.8 0.15 zFeatures 1) Both the DTB113Z chip and DTC114E chip in a SMT package.

Contextual Info: UMD2N Transistor, digitai, dual, NPN IM D 2 A and Features Dimensions U nits: mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages package marking: UMD2N and IMD2A; 02 package contains a PNP (DTA124EKA) and an NPN (DTC124EKA) digital transistor, each

DTA124E

Abstract: DTC124E T148
Contextual Info: EMD2 / UMD2N / IMD2A Transistors General purpose dual digital transistors EMD2 / UMD2N / IMD2A zExternal dimensions (Units : mm) (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMD2 (1) 1.2 1.6 0.5 0.13 zFeatures 1) Both the DTA124E chip and DTC124E chip in a EMT

UMD2N

Contextual Info: EMD2 / UMD2N / IMD2A Transistors General purpose dual digital transistors EMD2 / UMD2N / IMD2A !External dimensions (Units : mm) (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMD2 (1) 1.2 1.6 0.5 0.13 !Features 1) Both the DTA124E chip and DTC124E chip in a EMT

IMD2

Abstract: CNR 70 NDL7605P NDL7605P1C NDL7605P1D NDL7605P1X NDL7605P2C NDL7605P2D NDL7605P2X NDL7605P4C
Contextual Info: 1310 nm OPTICAL CATV RETURN PATH APPLICATIONS InGaAsP MQW-DFB LASER DIODE MODULE NDL7605P SERIES FEATURES DESCRIPTION • LOW DISTORTION: IMD2 = -50 dBc MAX1 @ TC = 25°C IMD2 = -45 dBc MAX1 @ TC = -40 to +85°C IMD3 = -60 dBc MAX1 @ TC = -40 to +85°C The NDL7605P Series is a 1310 nm uncooled isolated coaxial

C124E

Abstract: C124* transistor transistor 526 UMD2N DTC124E Transistors General DTA124E transistor 0103
Contextual Info: Transistors General purpose dual digital transistors UMD2N / IMD2A FFeatures 1) Both the DTA124E chip and DTC124E chip in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.

Contextual Info: EMD2 / UMD2N / IMD2A Transistors General purpose dual digital transistors EMD2 / UMD2N / IMD2A zExternal dimensions (Unit : mm) (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMD2 (1) 1.2 1.6 0.5 0.13 zFeatures 1) Both the DTA124E chip and DTC124E chip in a EMT

k 0355

Abstract: wilkinson wilkinson power divider IMD2365 wilkinson divider
Contextual Info: ims Thick Film C-Band Two Way Wilkinson Power Divider The IMD2365 I and IMD2435 thick film Wilkinson power dividers are designed for 6GHz center frequency with a 20% bandwidth. desig Alumina construction and high conductivity proprietary conductive Alum films provide for a compact low loss device, which exhibits a high

Contextual Info: EMD2 / UMD2N / IMD2A Transistors General purpose dual digital transistors EMD2 / UMD2N / IMD2A Features 1) Both the DTA124E chip and DTC124E chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT6 or UMT6 or SMT6 automatic mounting machines.

OD-8453N

Abstract: OD-S524-FCFPC-SM OD-S524-SCFPC-SM NEC Microwave Semiconductors
Contextual Info: Rev. 1.2 March 11, 2002 OD-8453N SMT-InGaAs PIN Module For CATV / Analog Video FEATURES n n n n Surface Mountable. Small Size Flat Ceramic Package 7.6 x 12.7 x 3 mm . High Resposivity : R = 0.9 A/W. Low Intermodulation Distortion IMD2≤ − 75dBc , IMD3≤ − 95dBc.

Contextual Info: O OD-S 493 1310am F P - LD Mo d u 1 e with built— n optical NEC isolator FEATURES Distortion IMD2£-53dBc IMD3^-53dBc RINS-130dB/Hz Pf=1.0aV A =1310m Tc=-40 to 85 *C Noise Optical output power Wavelength Operation over vide temperature Built-in optical isolator

UM02N

Abstract: umd2n
Contextual Info: Transistors Digital Transistor Isolated Dual Digital Transistors UMD2N / IMD2A •F e a tu re s 1) Two digital transistors, DTA124E and DTC124E, in the sam e size package as the UMT and SMT. 2) M ounting possible w ith UMT3 or SMT3 a u to m a tic m o u n tin g ma­

IMD2 transistor

Abstract: BHRH
Contextual Info: ROHM CO LTD HOE D • l&Z&W QQ0b3&7 1 BHRHM N y > v 'X £ /Transistors IMD2 - " IMD2 O M —£ — " " T '-" — . 11 ' ■ J Z V 3 - 9 0 M /inverter Driver Isolated Mini-Mold Device • i'Hfé'tfSSEI/Dlme.nslons Unit : mm 1) SM T (S C -59) ¿ | g ] - f t « f C

RF1480

Abstract: DS090113 bluetooth technology SP8T RFMD R04003 SP8T sp8t rf switch
Contextual Info: RF1480 SP8T SWITCH Features VDD =1.5V to 3.0V „ AuxSPI VDD =1.5V to 3.0V „ „ „ High Linearity IMD3 <108dBm, IMD2 <-103dBm Harmonics: -83dBcat1GHz GaAs pHEMT Process Applications „ „ „ „ Cellular Handset Applications Multi-Mode GSM, WCDMA Applications