22KQ Search Results

Contextual Info: SANYO SEMICONDUCTOR CORP 52E D 7TT7Q7b □00737t FC109 b T-37-/3 P N P Epitaxial Planar S ilico n C o m p o site Transistor 2067 Switching Applications with Bias Resistances R1=22ki2, R2=22kn F eatures •On-chip bias resistors (Rj = 22kQ,R2= 22ki2) • Composite type with 2 transistors contained in the CP package currently in use, improving the

Contextual Info: SANYO SEMICONDUCTOR FC112 CORP SEE D 7 eH 7 0 7 b 0 0 0 7 3 0 2 1 T -3 S -II # N P N Epitaxial Planar S ilico n C o m p o site Transistor 2066 Switching Applications 3080 with Bias Resistances R1=22kQ, R2=22kO F ea tu res On-chip bias resistors (Ri = 22kQ,R2= 22kfl)

KSR2103

Abstract: KSR1103
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSR2103 SWITCHING APPLICATION Bias Resistor Built In S O T-23 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R 1=22KQ , R2=22K£1) • C om plem ent to K S R 1103 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

KSR1107

Abstract: KSR2107
Contextual Info: KSR2107 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R 1=22KQ , R2=47K£i) • C om plem ent to K S R 1107 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

transistor 1207

Abstract: R1207
Contextual Info: KSR2207 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built in • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R esistor (Ri<*22kQ, R2=47kfl) • Com plem ent to KS R 1207 ABSOLUTE MAXIMUM RATINGS (TA=25t)

3079-2

Contextual Info: Ordering number: EN 3079 No.3079 SMiVO, F C l l l PNP Epitaxial Planar Silicon Composite Transistor i Switching Applications Features • On-chip bias resistors Ri = 22kfl,R2 = 22kQ • Composite type with 2 transistors contained in the CP package currently in use, improving the

Contextual Info: KSR1111 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=22KQ) • Complement to KSR2111 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: KSR1103 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=22KQ, RJ=22KQ) • Complement lo KSR2103 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C )

Contextual Info: KSR1208 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s R e s is to r B u ilt In • Sw itching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor <R,=47K0, R,=22KQ) • Complement to KSR2208 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

i22k

Abstract: KSR1207 KSR2207
Contextual Info: KSR2207 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R 1=22KQ , R2=47K£i) • C om plem ent to KSR 1207 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: SANYO SEMICONDUCTOR FC111 CORP 22E D 7Tî707t Q0D73Ô0 ñ T-37-/3 # PNP Epitaxial Planar Silicon Com posite Transistor 2066 Switching Applications 3079 with Bias Resistances R1=22kfl, R2=22kO Features • On-chip bias resistors (Ri = 22kfl,R2= 22kQ) • Composite type with 2 transistors contained in the CP package currently in use, improving the

Contextual Info: KSR2103 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=22K!2, R¡=22KQ) • Complement to KSR1103 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: KSR1107 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In Switching Circuit, Inverter, Interface circuit Driver circuit 1Built in bias Resistor (R,= 22KQ, Ri=47K!7| 1Complement to KSR2107 SO T-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

KSR1203

Abstract: KSR2203
Contextual Info: [S AM SUNG SEM IC O N D U CT O R INC "f-3 S'H ^4 E 0 KSR1203 | 7 e,b‘4l ‘l2 00070^*7 1 | NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor(R,=22KQ, R! =22KO)

Contextual Info: KSR2011 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO-92 • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R=22KQ) • Complement to KSR1011 ABSOLUTE MAXIMUM RATINGS (Ta=25°C )

Contextual Info: KSR2107 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R,=22KQ, R2=47KQ) • Complement to KSR1107 ABSOLUTE MAXIMUM RATINGS (Ta=25°C )

transistor kd 2059

Abstract: KD 2059 s2e transistor NPN S2e kd 616 transistor npn d 2058 2SC4397-appiled 2SA1677 2SC4397
Contextual Info: SANYO SEMICONDUCTOR 2SA1677, 2SC4397 CORP 2EE D 7 T c170?fci 0D073L. 2 b T-37-13 T-3S-H « * P N P /N P N Epitaxial P lan ar S ilic o n T ran sis to rs 2059 Switching Applications with Bias Resistances R1=22ki2, R2=22kQ 2765 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit

transistor npn d 2058

Abstract: k 2059 scr gate driver ic 2SA1677 2SC4397 s2e transistor
Contextual Info: SANYO SEMICONDUCTOR 2SA1677, 2SC4397 CORP 2EE D 7 T c170?fci 0D073L. 2 b T-37-13 T-3S-H « * P N P /N P N Epitaxial P lan ar S ilic o n T ran sis to rs 2059 Switching Applications with Bias Resistances R1=22ki2, R2=22kQ 2765 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit

vc 150 inverter

Contextual Info: KSR2003 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias Resistor Built In • Switching circuit, Inverter, Interface circuit. Driver Circuit • Built in Mas Resistor (Rt*22kQ, R*-22kÜ) • Complement to KSR1003 ABSOLUTE MAXIMUM RATINGS (TA=25"C)

10MHI

Abstract: KSR1008 KSR2008
Contextual Info: SAMSUNG SEMICONDUCTOR INC_ KSR2008 IME D | 7^4145 0007101 fl | PNP EPITAXIAL SILICON TRANSISTOR 77 3 7 13 - SWITCHING APPLICATION * - B ia s R e sis to r B u ilt In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=47KC1, R,=22KQ)

KSR1208

Abstract: KSR2208
Contextual Info: SAMSUNG S EM I C ON D U CT OR INC 1 4 E O KSR2208 I 7^4142 0007111 3 I PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias R esistor B u ilt In r- 3i -\ 2> • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,»47Kn, R,=22KQ)

Contextual Info: KSR2003 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R e sisto r B u ilt In • Switching circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor(R, = 22KQ, R,=22KQ) • Complement to KSR1003 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)

Contextual Info: KSR1003 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s R e s is t o r B u ilt In TO-92 • Sw itching circuit, Inverter, Interface circuit Driver circuit • Built in bias R esistor(R ,= 22KQ , R ,=22 K G ) • Com plement to KSR2003 ABSOLUTE MAXIMUM RATINGS (Ta= 2S°C)

I3003

Abstract: KSR1207 KSR2207
Contextual Info: SAMSUNG SEMICONDUCTOR INC T-3S-H IME D § KSR1207 f 0007075 O NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=22KQ, R,=47Ktl)