71BM42 Search Results

4.19MHz crystal

Abstract: KS57C2504 B4MS
Contextual Info: KS57C2504 4-Bit CMOS Microcontroller ELECTRONICS Data Sheet DESCRIPTION The KS57C2504 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With up to 320-dot LCD direct-drive capability, 8-bit timer/counter, serial I/O, and comparator, the KS57C2504 offers an

ka7309

Abstract: TI 81W CAMERA 803 CMOS sync timing generator T3D 77 KS7214 78235 T3D 91 oil temperature sensor generator
Contextual Info: KS7214 Timing & SYNC. Generator for B/W CCD GENERAL DESCRIPTION KS7214 is Timing control IC for generating timing signal & sync signal which required camera system using monochrome CCD Image sensor. FUNCTIONS - EIA/CCIR STANDARDS TIMING MODE - HI-BAND/ NORMAL TIMING MODE

KM44C4104bk

Abstract: cd-rom circuit diagram
Contextual Info: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: KM48C514D, KM48V514D CMOS DRAM 512Kx 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time(-5,-6,-7), power consumption(Normal or Low

Contextual Info: KA8513B FM IF RECEIVER INTRODUCTION The KA8S13B is designed for FM IF Detection on the pager set It includes voltage regulator, low battery detection circuit. Mixer, Oscillator. FS K comparator and limiting IF Amplifier. FEATURES • Operating Voltage Range: 1.0 ~ 4.0V

Contextual Info: KS9282B CMOS INTEGRATED CIRCUIT DSP+DAC 16BIT FOR CDP The KS9282B is a CMOS integrated circuit designed for the Digital Audio Signal processor of the CDP (Compact Disc Player) application. It is a Monolithic IC that builts-in 16-Bit Digital to Analog Converter to add to the conventional DSP function.

KMM366S403BTN-G2

Abstract: KMM366S403BTN-G0
Contextual Info: KMM366S403BTN NEW JEDEC SDRAM MODULE KMM366S403BTN SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S403BTN is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KM4132G271 CMOS SGRAM 128K X 32Bit X 2Bank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG'S high performance CMOS

Contextual Info: KSR1204 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s R e s is to r Built In T O -92 S • Switching circuit. Inverter. Interlace circuit Driver circuit • Built in bias Resistor(R, = 47K!J, Rj=47K fi) • Complement to KSR2204 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

RAS 1210 SUN HOLD

Abstract: sun hold RAS 1220 sun hold ras 1210
Contextual Info: CMOS DRAM KM416V1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION T h e S a m sun g K M 4 16V 1204A /A -L7A -F is a C M O S high • Performance range: tRA C tC A C tR C tH PC 24ns KM416V1204A-6/A-L6/A-F6 60ns 17ns

Contextual Info: KM4 I C I 6000B S CMOS DRAM ELECTRONICS 16M x 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

C1204B

Abstract: tsop 3021 DIN 3021 STANDARD AA3021
Contextual Info: KM416C1004BT ELECTRONICS CMOS D R A M 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

C1204B

Contextual Info: KM416V1004BT CMOS D R A M 1Mx16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: CMOS DIGITAL INTEGRATED CIRCUIT KS0108B 64 CHANNEL SEGMENT DRIVER FOR DOT MATRIX LCD 100 QFP FUNCTION The KS0108B is a LCD driver LSI with 64 channel output for dot matrix liquid crystal graphic display system. This device consists o f the dispay RAM, 64 bit data latch 64 bit

Contextual Info: K S 5 7C 2016 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2016 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit CPU core. With an up-to-20-digit LCD direct drive capability and up to 40 pins for LCD segment data

Contextual Info: KM4 1 V 1 6 0 0 0 B S CMOS DRAM ELECTRONICS 16M x 1 Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: K M 4 4 C 1 6 1 04 AS CMOS DRAM ELECTR O NICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 ,

Contextual Info: KMM366F203BK KMM366F213BK DRAM MODULE KMM366F203BK & KMM366F213BK EDO Mode without buffer 2Mx64 DRAM DIMM based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F20 1 3B is a 2M bit x 64 • Part Identification Dynam ic RAM high density m em ory module. The

KA8601C

Contextual Info: KA8601C ELECTRONICS Telephone INTRODUCTION The KA8601C is a monolithic integrated circuit for use in high perfor­ mance speaker phone system. The KA860IC consists of speaker phone and speech network. Speaker phone includes attenuators, amplifiers, level detectors, attenuator

Contextual Info: KM48C514DT CMOS DRAM ELECTRONICS 512 K x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

ks57c5016

Abstract: 3.58MHZ crystal oscillator 0011B sequential timer working ks57c50
Contextual Info: KS57C5016 ELECTRONICS Microcontroller »DESCRIPTION The KS57C5016 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With a DTMF generator, 8-bit serial I/O interface, and two 8-bit timer/counters, the KS57C5016 offers an excellent design

3UA52

Contextual Info: K M 4 4 C 1005 D T CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Extended Data Out Quad CAS CM OS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power

BV06S

Abstract: SFS9620 bta 600 RG18U
Contextual Info: SFS9620 Advanced Power MOSFET FEATURES B V dss = -2 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 1 -5 ß ■ Lower Input Capacitance In = -3 .0 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -200V

DRAM 18DIP

Abstract: KM41C1000CSL-6 KM41C1000CSL-7 KM41C1000CSL-8 DRAM 256kx4
Contextual Info: SAMSUNG ELE CTRONICS INC b?E ]> Wt 7 ^ 4 1 4 2 KM41C1000CSL 0015414 ?hh SM6K CM O S DRAM 1Mx1 Bit CM O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM 41C1000CSL is a C M O S high speed 1,048,576x1 Dynamic Random A cce ss Memory. Its