500EX Search Results

QA1400

Abstract: 1500EX24
Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL S G1500 EX 24 DATA SG1 500EX24 Unit in mm INVERTER APPLICATION 43 MAX (1) CHARACTERISTIC Repetitive Peak Off-State Voltage (Note 1) Repetitive Peak Reverse Voltage Peak Turn-Off Current (Note 2)

Contextual Info: TOSHIBA 500EXH22 500EXH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time VRRM = 2500V :F AV = 500A trr = 5/<s (MAX.) (Tj = 25°C)

diode 500A 2500v

Abstract: 500EXH22 izl diode
Contextual Info: TO SHIBA 500EXH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 500EXH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • Repetitive Peak Reverse Voltage V r r m = 2500V • Average Forward Current ÏF AV = 500A • Reverse Recovery Time trr = 5jus (MAX.) (Tj = 25°C)

Contextual Info: TOSHIBA 500EXH22 500EXH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time VRRM = 2500V :F AV = 500A trr = 5/<s (MAX.) (Tj = 25°C)

Contextual Info: T O SH IB A 500EXH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 5QQEXH22 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time U nit in mm = 2500V I f AV —500 A ^ = 5^5 (MAX.) (Tj = 25°C)

500EXH21

Abstract: 300YD13 400MAB180 400YD21 301F1FM 301F3FM 503PJA200 300MCB180 300MCB200 300ND13
Contextual Info: - £ 300MCB180 300MCB200 300MCB250 300ND13 300QD13 3000H21 300TD13 300WD13 300YD13 301F1FM 301F2FM 301F3FM 301R1FM 301R2FM 301R3FM 30 3PJA180 303PJA 200 30 3PJA250 353PJLA16 0 353PJLA18 0 353PJLA 20 0 353 PJL A25 0 400EXD21 400MAB180 400M AB200 400MAB250 400QD21

400YD21

Abstract: 300YD13 500EXH21 301F1FM 503PJA200 300MCB180 300MCB200 300MCB250 300ND13 300QD13
Contextual Info: - £ 300MCB180 300MCB200 300MCB250 300ND13 300QD13 3000H21 300TD13 300WD13 300YD13 301F1FM 301F2FM 301F3FM 301R1FM 301R2FM 301R3FM 30 3PJA180 303PJA 200 30 3PJA250 353PJLA16 0 353PJLA18 0 353PJLA 20 0 353 PJL A25 0 400EXD21 400MAB180 400M AB200 400MAB250 400QD21

snubber diode

Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Contextual Info: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11

6B4B41

Abstract: 1J4B41 1B4B41 6J4B41 6G4B41 1G4B41 4b4b41 4G4B41 10G4B41 15B4B42
Contextual Info: Rectifiers Average Forward Current «- General Purpose Rectifiers High-Speed Rectifiers -> Peak Repetitive Reverse Voltage Average Forward Current <- \ A \ Package trr 100V 400V 600V C2.F2 1000V 1500V 0.2A DO-41 S 1.5 ms TFR3N TRF3T 0.3A DO-41 SS 4 ms TFR4N

500EXH21

Abstract: 300QH21 300QD13 301F1FM 503PJA200 300MCB180 300MCB200 300MCB250 300ND13 300TD13
Contextual Info: - £ 300MCB180 300MCB200 300MCB250 300ND13 300QD13 3000H21 300TD13 300WD13 300YD13 301F1FM 301F2FM 301F3FM 301R1FM 301R2FM 301R3FM 30 3PJA180 303PJA 200 30 3PJA250 353PJLA16 0 353PJLA18 0 353PJLA 20 0 353 PJL A25 0 400EXD21 400MAB180 400M AB200 400MAB250 400QD21

300YD13

Abstract: 500EXH21 301R1FM 400YD21 300TD13 301F1FM 503PJA200 300MCB180 300MCB250 300ND13
Contextual Info: - £ 300MCB180 300MCB200 300MCB250 300ND13 300QD13 3000H21 300TD13 300WD13 300YD13 301F1FM 301F2FM 301F3FM 301R1FM 301R2FM 301R3FM 30 3PJA180 303PJA 200 30 3PJA250 353PJLA16 0 353PJLA18 0 353PJLA 20 0 353 PJL A25 0 400EXD21 400MAB180 400M AB200 400MAB250 400QD21

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

500EXH21

Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Contextual Info: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that

100EXG11

Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Contextual Info: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A 500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26

PJ 0519

Abstract: 500EXH21 940-T-DS/PJ 0519 400YD21 301F1FM 300YD13 300MCB200 hc 2500 300MCB250 300ND13
Contextual Info: - £ 300MCB180 300MCB200 300MCB250 300ND13 300QD13 3000H21 300TD13 300WD13 300YD13 301F1FM 301F2FM 301F3FM 301R1FM 301R2FM 301R3FM 30 3PJA180 303PJA 200 30 3PJA250 353PJLA16 0 353PJLA18 0 353PJLA 20 0 353 PJL A25 0 400EXD21 400MAB180 400M AB200 400MAB250 400QD21

SG600EX21

Contextual Info: _ * •*-> , ;y:; v:^ s v ‘ •*‘-V%’ • > * - > ^ * • •"- : v . - . FEATURES 1. 2. 3. 4. Low trigger current Low on-state voltage High peak turn-off current High current and high voltage ratings APPLICATIONS • • • • Uninterruptible power supply

tic 1260

Abstract: 500EXH21 300QD13 301F1FM 503PJA200 k1 522 503PJA250 300MCB200 300MCB250 300ND13
Contextual Info: - iz M £ 300MCB180 300MCB200 300MCB250 300ND13 300QD13 3000H21 300TD13 300WD13 300YD13 301F1FM 301F2FM 301F3FM 301R1FM 301R2FM 301R3FM 30 3PJA180 303PJA 200 30 3PJA250 353PJLA16 0 353PJLA18 0 353PJLA 20 0 353 PJL A25 0 400EXD21 400MAB180 400M AB200 400MAB250

gate turn off thyristors

Abstract: 500EXH21 800gxhh21 800exh21
Contextual Info: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any