snubber diode
Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Contextual Info: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11
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sg600gxh26sg800w24sg1000gxh26sg1200ex24+16sg1500ex24sg2000ex24sg2000ex26sg2000gxh26sg2200gxh24sg2500ex24snubber diodesg2500gxgto sg3000gxh24sg3000gxh24free diode1000gxhh22800exh21sg3000gxh100gxhh21sg4000gxh26g
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500EXH21
Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Contextual Info: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that
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sg1200ex24sg1500ex24sg2000ex24sg2200gxh24+13sg3000ex24sg3000gxh24sg3000jx24sg2000gxh26sg800gxh24sg1000gxh26500exh21100gxhh21800a 75mgate turn off thyristorstoshiba 100gxhh21800gxhh21800gx
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100EXG11
Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Contextual Info: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26
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sg2500ex24sg3000ex24sg4000ex26sg2000r24+16sg2000u24sg2000w24sg1200ex24sg1500ex24sg2000ex24sg2000ex26100exg11500exh21200fxg12200fxh12800gxhh21gto 200a100exhgto 300a100gxhh214500v
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GTO catalogue
Abstract: SG1000EX23 toshiba gto
Contextual Info: 3. METHOD OF USE 3.1 METHOD OF USE FOR GTO 3.1.1 G a te Triggering Characteristics Supplying a gate cu rren t to such th y risto rs as GTO, etc., switches them from the off-state to the on-state. T h y ris to r gate characteristics include gate trigger voltage, gate trigger current, gate non-trigger voltage,
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1000ex23gto cataloguesg1000ex23toshiba gto |
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SG600EX21
Contextual Info: _ * •*-> , ;y:; v:^ s v ‘ •*‘-V%’ • > * - > ^ * • •"- : v . - . FEATURES 1. 2. 3. 4. Low trigger current Low on-state voltage High peak turn-off current High current and high voltage ratings APPLICATIONS • • • • Uninterruptible power supply
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sg600r21sg800r21sg600ex21sg800ex21+5sg1000r22sg1200ex21sg1400ex21165jj84-3-ac
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gate turn off thyristors
Abstract: 500EXH21 800gxhh21 800exh21
Contextual Info: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that
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1sg1200ex24sg1500ex24sg2000ex24sg2000ex26+10sg2200gxh24sg3000ex24sgr3000ex26sg4000ex26sgr3000gxh26sg4000gxh26gate turn off thyristors500exh21800gxhh21800exh21
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