5X1012 Search Results

Contextual Info: ¡ f ì H A R R CA5470 I S S E M I C O N D U C T O R Quad Microprocessor BiMOS-E Operational Amplifiers with MOSFET Input/Bipolar Output March1993 Features Description • High Speed CMOS Input Stage Provides - Very High 2 1 . 5T Q 5x1012il Typ.

MCX RF

Abstract: HCD220
Contextual Info: OCXO Sine Output HCD220 Specifications Product Parameters Frequency range: Optional SMA/B/C/BNC/MCX RF connector s 10.00 PIN 50.00 17.00 15.90 A A Fixing holes M3 tapped. Penetration 5mm max. A Freq adjust (+ve) 2 Fine adjust 3 Freq adjust (-ve) 4 Isolated RF output

Contextual Info: BPV21F L Vishay Telefunken Silicon PIN Photodiode Description BPV21F(L) is a high speed and high sensitive PIN photodiode in a plasic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters

BPV21F

Abstract: BPV21FL BPV23FL
Contextual Info: BPV21F L Vishay Telefunken Silicon PIN Photodiode Description BPV21F(L) is a high speed and high sensitive PIN photodiode in a plasic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters

M9101

Abstract: M9103 Disciplined Rubidium Oscillator SCPI-99 M9100 M910 antenna CDM time base reference m9101d
Contextual Info: Introduces M9100/M9101/M9103 Series GPSDO Global Positioning Satellite Disciplined Oscillators Features:  Long-Term Stratum-I Performance - better than 5x10-12 averaged over 24 hours  High Accuracy 1 PPS LVDS Output Signal - Phase Synchronized to better than

INA110KP

Abstract: 2N2222A plastic instrumentation amplifier with offset adjust MPC800 AD524 AD624 INA110 INA110AG INA110BG RG113
Contextual Info: INA110 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK ● AMPLIFICATION OF HIGH IMPEDANCE SOURCES

Contextual Info: p P jp i G E C P L E S S E Y ADVANCE DATA SE MI CONDU CTORS DS3694-2.1 MA9564 HIGH TRANSIENT/RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9564 64k Static RAM is configured as 8192 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.Sjim technology. The device has been designed specifically for high

Contextual Info: BPV21F Vishay Telefunken Silicon PIN Photodiode Description BPV21F is a high speed and high sensitive PIN photodiode in a plasic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters

Contextual Info: BPV23NF Vishay Telefunken Silicon PIN Photodiode Description BPV23NF is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs IR

Contextual Info: TO SHIBA TLP666G TOSHIBA PHOTO COUPLER OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVER SOLID STATE RELAY GaAs IRED & PHOTO-TRIAC TLP666G The TOSHIBA TLP666G consists of a zero voltage crossing turn-on photo-triac optically coupled to a gallium arsenide infrared emitting

Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK

Contextual Info: BPV23FL y m m f _ ▼ Vishay Telefunken Silicon PIN Photodiode Description BPV23FL is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAIAs IR emit­

BPV23F

Abstract: BPV23FL
Contextual Info: BPV23F L Vishay Telefunken Silicon PIN Photodiode Description BPV23F(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters (l p = 950 nm)

BPV23NF

Abstract: BPV23FL BPV23NFL
Contextual Info: BPV23NF L Vishay Telefunken Silicon PIN Photodiode Description BPV23NF(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs IR

BS100D

Abstract: bs100
Contextual Info: SHARP E L E K / MELEC DIV 1SE D I Blue Sensitive Photodiode BS100D • 01 0 07 ^ 0 E I • ■ B S 100D Wide Wavelength Band Type Photodloîe^ Featu res Outline Dim ensions Unit : mm 1. Wide dynamic range (Capable of Ev = 10-3 ~ 104#x range measurament)

IRIG B generator

Contextual Info: PCI Express Time Code Processor Model TSync-PCIe Shown with optional GPS+GLONASS receiver and OCXO • Low-Profile PCIe Form Factor • PCIe x1 Local Bus Operation • Zero Latency Time Reads • ±100ns Accuracy to Input • Auto-Detects and Prioritizes GPS

MTTF

Contextual Info: GaAs Schottky Diode Reliability Data HSCH-9XXX The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-750. Data was gathered from the product qualification, reliability

HLXSR01632

Contextual Info: HLXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low

BPV23F

Abstract: BPV23FL
Contextual Info: BPV23F L Vishay Semiconductors Silicon PIN Photodiode Description BPV23F(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters (l p = 950 nm)

Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK

transistor KJJ

Abstract: C-1248 C1243 C1248 C1250 C2079 MCT210 Phototransistor with base emitter CI242 C1256
Contextual Info: I5 Q PHOTOTRANSISTOR OPTOCOUPLER IPTOELEtTHIIICS MCT 210 DESCRIPTION PACKAGE DIMENSIONS The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.

AD524

Abstract: AD624 INA110 INA110AG
Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK

MV140-B

Abstract: MV140 Morion mv140
Contextual Info: PRECISION OCXO IN SMD PACKAGE MV140 Features: • · · · High frequency stability vs. temperature - up to ±5.0x10-9 Industry standard 25x22 mm SMD package Oven alarm & oscillator On/Off function Available as RoHS ±5x10-9 ±1x10-8 ±2x10-8 Availability of

CO-08

Abstract: MV145
Contextual Info: MINIATURE DOUBLE OVEN ULTRA PRECISION OCXO MV145 Features: • Low Sensitivity to rapid changes of ambient temperature · Stability vs. temperature – up to +/- 2x10-10 · Short term stability – up to 5x10-12 per 1 sec · Aging – up to 2x10-8/year · Standard CO-08 package with size of 36x27x19 mm