T0252 Search Results

SPD31N05

Contextual Info: SIEMENS SPD31N05 SPU31N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS h RDS on Package Ordering Code SPD31N05 55 V 31 A 0.04 f ì P-T0252

T0252

Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
Contextual Info: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)

SP*02N60

Abstract: transistor smd hq
Contextual Info: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated V P T 0905 1 Type SPD02N60 ^DS h 600 V 2 A Pin 1 Pin 2 Pin 3 G D S f î DS on (a) VGS Package Ordering Code 5.5 Q, Vgs = 10 V P-T0252

siemens igbt

Contextual Info: SIEMENS SGD04N60 P re lim in a ry data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated SGD04N60 Ul Type 600V h Package Ordering Code 4A P-T0252 Q67040-A . . . . Maximum Ratings Parameter

Contextual Info: SIEMENS SPD23N05 SPU23N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS k> *DS on Package Ordering Code SPD23N05 55 V 22 A 0.06 Q P-T0252

P-T0252-3-1

Abstract: 3,3 v regulator smd
Contextual Info: SIEMENS Short Description TLE 4274 Features • Voltage regulator • Wide operating range • Wide temperature range • Short-circuit protection • Over temperature protection • Reverse polarity proof • 2.5 V, 3.3 V y \/ I ! P-SOT223 P-T0252-3-1 D-PAK

iss-400 diode

Abstract: SPD07N20
Contextual Info: SIEMENS SPD07N20 Preliminary data SPU07N20 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type Vds h WDS on Package Ordering Code SPD07N20 200 V 7A 0.4 Q P-T0252 C67078-S.-. -. SPU07N20 200 V 7A

spd14n05

Contextual Info: SIEMENS SPD14N05 SPU14N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS k> ROS on Package Ordering Code SPD14N05 55 V 13.5 A 0.1 Q P-T0252

Contextual Info: SPD28N03 SPU28N03 SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche rated • övlöt rated • 175°C operating temperature Type ^DS SPD28N03 30 V b 28 A Pin 1 Pin 2 Pin 3 G D S Package f f DS on (à) VGS 0.023 Q, ^GS = 10 V P-T0252

U5004

Contextual Info: SIEMENS SPD08P05 Preliminary data SPU08P05 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 G Pin 2 Pin 3 D S Type VDS b RDS on Package Ordering Code SPD08P05 -50 V -8 A 0.3 £2 P-T0252 Q67000-. . . . . . SPU08P05 -50 V

Contextual Info: SIEMENS SGD02N60 Prelim inary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type Vce SGD02N60 600V 2A Package Ordering Code P-T0252 Q67040-A . . . . Maximum Ratings Collector-emitter voltage

P-T0251

Abstract: spd08n
Contextual Info: SIEMENS SPD08N10 Preliminary data SPU08N10 SIPMOS Power Transistor • N channel n. • Enhancement mode x • Avalanche-rated 1 2 ^ cr VPT09050 Pin 1 G Pin 2 Pin 3 D S Type ^DS fc *DS(on Package Ordering Code SPD08N10 100 V 8.4 A 0.3 Q, P-T0252 Q67000-.

Contextual Info: SIEMENS SGD06N60 P relim in ary data IGBT • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCB k Package Ordering Code SGD06N60 600V 6A P-T0252 Q67040-A . . . . Maximum Ratings Symbol Values UJ Parameter 600 Collector-emitter voltage Collector-gate voltage

Contextual Info: SIEMENS SPD10N10 Preliminary data SPU10N10 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 Pin 3 D S Type VDS b RDS on Package Ordering Code SPD10N10 100 V 10 A 0.2 Q P-T0252 C67078-S. SPU10N10 100 V 10 A 0.2 Q

L260B

Abstract: L118B LP38693QSDX-5 lp38691 L258B LP38693 ic L120B
Contextual Info: LP38691 LP38693 500mA Low Dropout CMOS Linear RegulatorsStable with Ceramic Output Capacitors General Description Features The LP38691/3 low dropout CMOS linear regulators provide tight output tolerance 2.0% typical , extremely low dropout voltage (250 mV @ 500mA load current, VOUT = 5V), and excellent AC performance utilizing ultra low ESR ceramic output

l078b

Abstract: marking l078b 4925 B transistor LP8340CDT-5.0 LP8340CLD-ADJ LP8340 LP8340C LP8340CLDX-ADJ LP8340I L082
Contextual Info: LP8340 Low Dropout, Low IQ, 1.0A CMOS Linear Regulator General Description Features The LP8340 low-dropout CMOS linear regulator is available in 5V, 3.3V, 2.5V, 1.8V and adjustable output versions. Packaged in the 6ld LLP package and 3ld DPAK. The LP8340 can

13005 2 transistor

Abstract: D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT
Contextual Info: TD13004 • TD13005 Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology Very low dynam ic saturation • G lass passivation Very low operating tem perature • Very short sw itching times High reverse voltage

transistor number code book FREE

Abstract: AES01925 Q67000-A9209-A801
Contextual Info: SIEMENS 5-V Low-Drop Fixed Voltage Regulator TLE 4270 Features • • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms

P-T0220-3-1

Abstract: 4274V50 TLE4274V50 P-T0252-3-1
Contextual Info: S IE M E N S Low-Drop Voltage Regulator TLE 4274 Features • • • • • • Output voltage tolerance < ± 4 % Low-drop voltage Very low current consumption Short-circuit proof Reverse polarity proof Suitable for use in automotive electronics Type Ordering Code

BJ010

Abstract: TLE427S T02521 Q67000-A9342
Contextual Info: SIEMENS 5-V Low -D rop V o ltage R egulator TLE 4275 Preliminary Data Features Output voltage 5 V ± 2% Very low current consumption Power-on and undervoltage reset Reset low down to VQ= 1 V Very low-drop voltage Short-circuit-proof Reverse polarity proof

transistor Electronic ballast 13005

Abstract: TD13005 transistor E 13005 SMD 13005 transistor transistor d 13005 13005 ballast 13005 TO-252 transistor 13005 CIRCUIT BR 13005 transistor 13005
Contextual Info: T e m ic TD13004 • TD13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times

AIAG PPAP MANUAL

Abstract: ds90uh926 Traffic sign recognition LM 338 Variable Regulator AEC-Q003 SMD Code 12W SOT-23 PAL 007 E MOSFET PAL 0007 E MOSFET lmh6629 transistor SMD 12W sot-23
Contextual Info: Automotive Solutions Solutions Guide national.com/automotive 2010 Vol. 2 Power Solutions Interface Solutions Data Conversion Temperature Solutions Audio Solutions Amplifiers Design Resources Temp Sensor GPS Rx Speed Input Temp Input Temp Sensor Amp Amp ADC

SPX1202

Abstract: SPX1202T SPX1202U TO252-3 material case
Contextual Info: SPX1202 600mA Low Dropout NPN Voltage Regulator FEATURES APPLICATIONS • Guaranteed 600mA Output • Three Terminal Adjustable Or Fixed 1.5V, 2.5V, 3V, 3.3V & 5V • Very Low Quiescent Current • Low Dropout Voltage Of 1.2 Volts At Full Load • Extremely Tight Load And Line Regulation

78M05 jrc

Abstract: NJM78M05A NJM78M15A NJM78M12A TO-252 78m05 NJM78M08A NJM78M06A NJM78M18A 78m05 78M12-78M15
Contextual Info: NJM78M00 3-TE R M IN A L POSITIVE VOLTAGE REGULATOR • GENERAL DESCRIPTION PACKAGE OUTLINE The NJM78MOO series o f 3-Terminal Positive Voltage Regulators is constructed using the New JRC Planar epitaxial process. These regu­ lators em ploy internal current-lim iting, therm al-shutdow n and safearea compensation making them essentially indestructible. If adequate