T0247 PACKAGE Search Results

TRANSISTOR 9642

Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

T0247 package

Abstract: alpha marking code ALPHA YEAR CODE K10B60D
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR T0247 PACKAGE MARKING DESCRIPTION oI 1 P o y ^ K 1 0B60D ^ K 1 0B60D FAYWLT FAYWLT O \i \J U Standard product NOTE: LOGO K10B60D F A Y W L&T 1 U° ^ O J 1 o 0 - AOS Logo - Part number code - Fab code - Assembly location code - Year code

T0247 package

Abstract: marking alpha omega ALPHA YEAR CODE A F U marking code alpha marking code aos Lot Code Week
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Document No. Version PD-01888 Title AOK15BÓOD Marking Description T0247 PACKAGE MARKING DESCRIPTION ^ K 1 5B60D oI 1 1 U ° ^ OJ 1 o 0 p O y ^ K 1 5B60D o FAYWLT \i \J U Standard product NOTE: LOGO K15B60D F A Y W L&T - AOS Logo

Contextual Info: lili e FFe iiii SEME BFC51 LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 5 31 (0 20» ) t * 9 (0 0 5 8 ) - fs|_ 3 J 5 (0 14 0) 3 11 (0 ISO) 'DSS 0 4 0 (0 016) I D(cont)

Contextual Info: lili mi SEME BFC48 LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS ' 5 31 (0 209) 1 4» IP 0S9) 'DSS 0 40 (0 0161 0 70 (0 031) I D(cont) 1 01 (0 0 4 0 ) ^ R DS(on) I 10 5 |0 430)J

Contextual Info: POWER THICK FILM ON STEEL RESISTORS T0126, TO220, and T0247, 25 to 100 WATT R E S IS T O R S ‘ C A P S & C O ILS ‘ D E LAY LINES HDP SERIES FEATURES □ □ □ □ □ □ Industry’s most economical TO -style power resistors! Standard resistance range: 0.05C2 to 1 0KQ

apt4020an

Contextual Info: "SW A N CED POÌdEK “Tfl TtCH N O LO G Y DE I o d h v i ü i □u u u u o l . □ T ' M P For Additional information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RAN APT1001R2AN

Contextual Info: ADVANCED POWER T E C H N O L O G Y Tfl DE | □ S S 7 C1GC] OOODQOfl 4 T - 3 9 -'S XI P For Additional Information Contact APT Sales Representatives Or The Factory. APT PART # UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1002RBN APT1002R4BN

Contextual Info: r Z 7 SGS-THOMSON ^[] æ[l[L[iCT^©[lïl[]©i STPS60xxCP/CPI STPS6045CW POWER SCHOTTKY RECTIFIERS FEATURES AND BENEFITS • ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLESWITCHING LOSSES EXTREME FAST SWITCHING HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE

IRFP4568

Abstract: IRFP4768 D2PAK TO247 7pin package IRFB4110 IRFP4668 IRFP4568PBF IRFS3006-7PPBF IRF1324 d2pak-7
Contextual Info: BENCHMARK MOSFETS THE POWER MANAGEMENT LEADER MOSFETs for Industrial Applications Features and Benefits: • Low on resistance per silicon area • Optimized for both fast switching and low gate charge • Excellent gate, avalanche and dynamic dv/dt ruggedness

Contextual Info: BYW99P/PI/W HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ ■ ■ SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION T O P 3I: Insulating voltage = 2500 V DC

M7 DIODE POLARITY

Abstract: DIODE M7 marking M7 DIODE MARKING
Contextual Info: SGS-THOMSON IM O M iL iig ra fM O O S B Y W 9 9 P /P I/W HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET FEATURES • . . . . ■ SUITED FORSMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY

stps3045cw

Contextual Info: SGS-THOMSON STPS30xxCP/CPI STPS3045CW IMSIlaillLiOTIHMDCS POWER SCHOTTKY RECTIFIERS • . ■ ■ . ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE

Contextual Info: STPS60L30CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 2x30 A V rrm 30 V Tj (max) 150 °C V f (max) 0.38 V FEATURES AND BENEFITS • ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING

Contextual Info: DIOTEC ELECTRONICS CORP D1C SflE D • 204^10? 0000025 bTfl IDIX Data Sheet No.: SBDT-1200-A DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 r - o v n Fax: (310)767-7958 12 AMP SCHOTTKY BARRIER RECTIFIERS Fully-Insulated Package

PWM welding

Contextual Info: @ M ITEL ITZ25F12 - _ Powerline N-Channel IGBT SEM ICON D UCTOR . . . , A dvance Inform ation DS5054-1.2 January 1999 The ITZ25F12 is a very robust non punch through nchannel, enhan cem ent m ode insulated gate bipolar transistor IGBT designed for low power dissipation in a

Contextual Info: SA0YO SANYO Discrete Device Package Out 1ines unit:mm Large-Signal Transistors Smal1-Signal Transistors SMP, SMP-FD, T0-220, T0-220ML, T0-220FI (LS), T0-220MF, T0-3PB, T0-3PML, T0-3PBL, T0-3JML. Outlines SMCP, MCP, CP, CP4/5/6, PCP, PCP4/5, XP5/6, TP, TP-FA, MFP6,

ITZ35F12P

Abstract: ITZ35F12
Contextual Info: ITZ35F12 M ITEL Powerline N-Channel IGBT S E M IC O N D U C T O R A dvance Inform ation Supersedes Novem ber 1998, version DS5069-1.0 The ITZ35F12 is a ve ry robust non punch through nc h a n n e l, e n h a n c e m e n t m ode in s u la te d g a te b ip o la r

DS4737-4

Contextual Info: /t7k M ITEL ITS08C06 SE M IC O N D U C T O R Medium Frequency Powerline N-Channel IGBT with Ultrafast Diode Supersedes March 1999, version DS4737-3.0 DS4737-4.0 April 1999 The ITS08C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

Contextual Info: smro SANYO Discrete Device Package Out 1ines unit:mm Sm all-S ig n al T r a n s i s t o r s Large-Signal T ra n sisto rs Outlines SMCP, MCP. CP, CP4/5/6, PCP, PCP4/5, XP5/6, TP, TP-FA, MFP6, S0P8 name SPA. NP, MP, NMP, FLP, TO-126, T0-126ML, T0-126LP ZP. SMP, SMP-FD, TO-220, T0-220ML, T0-220FI (LS). TO-220MF,

1xgh32

Abstract: IXGH32N60B
Contextual Info: Preliminary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 VCE sat t, Symbol Test Conditions V OES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 MO 600 V VGES Continuous ±20 V V OEM Transient ±30 V 60 A ^C90 Tc = 25°C Tc = 90°C

Contextual Info: ITH60F06 M ITEL High Speed Powerline N-Channel IGBT SEMICONDUCTOR A dvance Inform ation DS4992-2.2 O ctober 1998 T h e IT H 6 0 F 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r IGBT designed fo r low pow er dissipation in a w ide range

40F06P

Abstract: ITH40F06
Contextual Info: M ITEL S E M IC O N D U C T O R ITH40F06 High Speed Powerline N-Channel IGBT A dvance Inform ation DS4991-2.2 O ctober 1998 T h e IT H 4 0 F 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r

Contextual Info: IT Z 1 5 F 1 2 M ITEL Powerline N-Channel IGBT S E M IC O N D U C T O R A dvance Inform ation DS5053-1.2 January 1999 The ITZ15F12 is a ve ry robust non punch through nc h a n n e l, e n h a n c e m e n t m ode in s u la te d g a te b ip o la r tran sistor IGBT designed fo r low pow er dissipation in a