BUL48B Search Results

Contextual Info: BUL48B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: BUL48B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

T0251

Abstract: T0-251
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B BUL52A BUL52AFI BUL52AH BUL52B BUL52BFI BUL52BL BUL53A BUL53B BUL54A BUL54B BUL54BFI BUL55A BUL55B BUL56A BUL56B BUL57A BUL58A

BUL48B

Contextual Info: BUL48B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

G872A

Abstract: G672A semefab BUL48B BUL49A BUL49B G172 G272A G372A G572A
Contextual Info: Ô1331Ô7 ODODHIS 3TH « SM l- B MÛE D SEM EFABI SEMELAB LTD DIFFUSION DISTRIBUTED BASE TECHNOLOGY DIE DESIGNED AND DIFFUSED BY SEMEFAB G172 chip family The G172 chip family is an NPN bipolar multiepitaxial planar transistor using SEMEFAB’S new ADVANCED DISTRIBUTED BASE TECHNOLOGY

Contextual Info: bOE D • A1331Ô7 ODGDSQfl QMS ■ SMLB SEMELAB PLC SEMELAB 'T S V lS BU L48B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M E C H A N IC A L D A TA D im ension s in m m • SEMEFAB DESIGNED A N D DIFFUSED • HIGH VOLTAGE VCE>0= 800V

l55a

Abstract: UL55A G535A g435 L54B G536a UL-55 G335A GB72A BUP46
Contextual Info: Power M anagem ent Division Sem elab B I-P O L A R POWER TRANSISTORS D iffused by S EM E F A B in G lenrothes and built by S E M E LA B in Lutterw orth are tw o ranges of high energy B i-P o la r transistors: • G 170 series of 4 die de sig ned fo r use in ve ry fast sw itching high voltage applications.

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

bup43

Contextual Info: IMI i ^= IDI Sem elab Power M anagem ent Division BI-POLAR POWER TRANSISTORS PRIME SALES TYPES R ei. P ackage v ce/ P a rt No. O p tio n s P o la rity V CEO BUL46A / NPN BUL46B / BUL47A BUL47B PD Type h FE / ' c 500 le 7 10min 4/8 20M 200 T O -3 NPN 400 25

bup4

Abstract: bup57 bup44
Contextual Info: Power Management Division Power Management Division bipolar power transistors Non standard types B ip o la r p o w e r tr a n s is to r s S e m e la b m a n u f a c tu r e s an e x te n s iv e range of W e p r o d u c e m a n y c u s t o m e r - s p e c i f i c p a rts ,