BUL53A Search Results
BUL53A Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BUL53A | Semelab | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | Original | 19.82KB | 2 | ||
| BUL53A | Semelab | Bi-Polar Transistors (CECC and High Rel) & High Energy | Scan | 74.71KB | 1 | ||
| BUL53ASMD | Semelab | Bipolar NPN Device in a Hermetically Sealed Ceramic Surface Mount Package for High Reliability Applications | Original | 10.11KB | 1 |
BUL53A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BUL53AContextual Info: SEME BUL53A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85 |
Original |
bul53a | |
|
Contextual Info: SEME BUL53A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85 |
Original |
bul53a | |
NPN Transistor 600VContextual Info: Mil = ^ = INI BUL53A SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE |
OCR Scan |
bul53at0220npn transistor 600v | |
BUL53ASMDContextual Info: BUL53ASMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed |
Original |
bul53asmdo276ab15-aug-02 | |
T0251
Abstract: T0-251
|
OCR Scan |
bul47abul47bbul48abul48b+8 | |
2n3866s
Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
|
OCR Scan |
byv34-300smbyv34-400asmbyv34--400rsm+15 | |
BUL52A
Abstract: SOT93 BUP43 BUP47 BUP49 BUP53 dd453 BUL50A BUL50B BUL51A
|
OCR Scan |
dd453bul50as0t9310min+11 | |
G675A
Abstract: BUL53A BUL53B G175 G275A G375A G575A G875A G875DE G975A
|
OCR Scan |
-126x126-56x29milsg575ag67sa+9 | |
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
|
Original |
2c4152c4252c4442c746+16 | |
bup43Contextual Info: IMI i ^= IDI Sem elab Power M anagem ent Division BI-POLAR POWER TRANSISTORS PRIME SALES TYPES R ei. P ackage v ce/ P a rt No. O p tio n s P o la rity V CEO BUL46A / NPN BUL46B / BUL47A BUL47B PD Type h FE / ' c 500 le 7 10min 4/8 20M 200 T O -3 NPN 400 25 |
OCR Scan |
bul46abul46bbul47abul47b+7 | |
mje13009 equivalent
Abstract: MJEI3008 BUV46 equivalent buu26 ST MJE13007 mje13007 equivalent
|
OCR Scan |
bul74amje13009bul36it022sgo+10 | |
bup4
Abstract: bup57 bup44
|
OCR Scan |
bup52bup54t0247bup56+4 |