BUL52A Search Results

MIL npn high voltage transistor 500V

Contextual Info: Mil = ^ = INI BUL52AFI SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 Designed for use in electronic ballast applications 3.6 Dia. • SEMEFAB DESIGNED AND DIFFUSED DIE 1 2 3

SEM-E

Abstract: transistor VCE 1000V to220 01455 NPN Transistor VCEO 1000V vce 500v NPN Transistor BUL52AFI transistor 500v 0.5a
Contextual Info: SEME BUL52AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 Designed for use in electronic ballast applications 15.1 3.6 Dia. • • • • 1 2 3 14.0 1.3 0.85 SEMEFAB DESIGNED AND DIFFUSED DIE

Contextual Info: SEME BUL52A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 Designed for use in electronic ballast applications 18.0 15.1 3.6 Dia. 1 2 3 14.0 1.3 0.85 0.5 2.54 2.54

BUL52A

Abstract: semefab NPN Transistor VCEO 1000V
Contextual Info: SEME BUL52A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 Designed for use in electronic ballast applications 18.0 15.1 3.6 Dia. 1 2 3 14.0 1.3 0.85 0.5 2.54 2.54

T0251

Abstract: T0-251
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B BUL52A BUL52AFI BUL52AH BUL52B BUL52BFI BUL52BL BUL53A BUL53B BUL54A BUL54B BUL54BFI BUL55A BUL55B BUL56A BUL56B BUL57A BUL58A

BUL52ASMD

Abstract: TO276AB
Contextual Info: BUL52ASMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed

Contextual Info: SEME BUL52AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 Designed for use in electronic ballast applications 15.1 3.6 Dia. • • • • 1 2 3 14.0 1.3 0.85 SEMEFAB DESIGNED AND DIFFUSED DIE

Contextual Info: Mil =X= mi SEME BUL52A LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 f*-► , r*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 3.6 Dia. • SEMEFAB DESIGNED AND DIFFUSED DIE

NPN 250W

Abstract: BUL50A-T247 NPN 400V 40A BUR13 BUL58
Contextual Info: Search Results Part number search for devices beginning "BUL47" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUL47A NPN TO3 300V 40A 25 - 4/25 20MHz 200W

2n3866s

Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
Contextual Info: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1

BUL52A

Abstract: SOT93 BUP43 BUP47 BUP49 BUP53 dd453 BUL50A BUL50B BUL51A
Contextual Info: 4AE D • fll331fl7 0DDD4S3 IDA ■ SMLB SEMELAB LTD T-Z?-o BI-POLAR TRANSISTORS (CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code HR HR HR HR HR HR HR HR HR HR HR HR UR HR CECC CECC CECC REQ REQ HR HR HR HR CECC CECC CECC CECC Pol NPN NPN NPN NPN NPN

G675A

Abstract: BUL53A BUL53B G175 G275A G375A G575A G875A G875DE G975A
Contextual Info: 46E T> m 6 1 3 3 1 6 7 DDDDHlb 5 3 0 • S f l L B DIFFUSION SEMEFABI S E H E L A B DISTRIBUTED BASE TECHNOLOGY DIE DESIGNED AND DIFFUSED BY SEMEFAB "P G175 chip family J LTD * Z S 'V l The G 175 chip family is an NPN bipolar multiepitaxial planar transistor using SEMEFAB’S new

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

bup43

Contextual Info: IMI i ^= IDI Sem elab Power M anagem ent Division BI-POLAR POWER TRANSISTORS PRIME SALES TYPES R ei. P ackage v ce/ P a rt No. O p tio n s P o la rity V CEO BUL46A / NPN BUL46B / BUL47A BUL47B PD Type h FE / ' c 500 le 7 10min 4/8 20M 200 T O -3 NPN 400 25

bup4

Abstract: bup57 bup44
Contextual Info: Power Management Division Power Management Division bipolar power transistors Non standard types B ip o la r p o w e r tr a n s is to r s S e m e la b m a n u f a c tu r e s an e x te n s iv e range of W e p r o d u c e m a n y c u s t o m e r - s p e c i f i c p a rts ,