T0204 Search Results

IRFC430

Abstract: irfg 40 IRFC330 IRFC120 stf460 IRFCG40 IRFC420 IRFCF30 stf250 IRFC440
Contextual Info: MOSFETS N CHANNEL PO W ER M O SFETS PACKAGE T0213AA TO-66 PACKAGE T0204 (TO-3) DEVICE TYPE bvdss VOLTS STFJ120 100 STFJ130 RDS(ON) @0.5 'D OHMS •d CONTINUOUS AMPS PD MAX WATTS 40 CHIP 100 0.3 0.18 12.0 100 0.085 15.0 50 70 IRFG 30 STFJ140 STFJ220 0.8 5.0

2950

Abstract: stf460
Contextual Info: MOSFETS N CHANNEL POWER MOSFETS PACKAGE T0204 TO-3 DEVICE TYPE BVq s s VOLTS 'd AMPS r DS(ON) @ 0.5 ' d OHMS CISS pf Pd WATTS SNF61011A 1000 12.0 1.1 155 4500 300 SNF61011 1000 9.5 1.1 70 2950 300 SNF61013 1000 8.5 1.3 70 2950 300 SNF61020 1000 6.0 2.0 105

NSF350

Abstract: 372M NSF60708 NSF60808 NSF60809 NSF60812 NSF60910 NSF60911 NSF60913 NSF61011
Contextual Info: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-3 PACKAGE T0204 TO-3 DEVICE TYPE NSF61011A NSF61011 NSF61013 NSF60910 NSF60911 NSF60913 NSF60808 NSF60809 NSF60812 NSF60708 NSF60709 NSF60712 NSF60603 NSF60604 NSF60605 NSF60606 NSF605023 NSF460 NSF360

Contextual Info: MOSFETS N C H A N N E L POW ER M O SFETS PACKAGE T0204 TO-3 -, W II DEVICE TYPE Qg CISS nc pf* >d AMPS SNF60505 500 14.5 0.5 130 2950 300 STF360 400 28.0 0.2 210 4100 300 STF350 400 15.0 0.3 120 2800 150 STF250 200 30.0 0.085 120 2800 150 STF150 100 40.0

Contextual Info: Type No. IRF232 IRF630 IRF631 IRF632 IRF633 9-16 2N6759 2N6760 IRF330 IRF331 IRF333 IRF730 IRF731 TO-204AA 42 T 02 04A A (42) TO-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) 70220 (37) T0204AA (42) TO-204AA (42) T 02 04A A (42) T0-204AA (42)

2950

Contextual Info: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-3 PACKAGE T0204 TO-3 DEVICE TYPE NSF61011A NSF61011 NSF61013 NSF60910 NSF60911 NSF60913 NSF60808 NSF60809 NSF60812 NSF60708 NSF60709 NSF60712 NSF60603 NSF60604 NSF60605 NSF60606 NSF605023 NSF460 NSF360

NSF350

Abstract: NSF60708 NSF60808 NSF60809 NSF60812 NSF60910 NSF60911 NSF60913 NSF61011 NSF61011A
Contextual Info: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-3 PACKAGE T0204 TO-3 DEVICE TYPE NSF61011A NSF61011 NSF61013 NSF60910 NSF60911 NSF60913 NSF60808 NSF60809 NSF60812 NSF60708 NSF60709 NSF60712 NSF60603 NSF60604 NSF60605 NSF60606 NSF605023 NSF460 NSF360

RC555

Contextual Info: T02040 001229 D 2,5/5.SNBT.2L Terminal blocks spring connection D 2,5/5.SNBT.4L Spacing 5 mm +0,05 .197" Spacing 5 mm +0,05 .197" heavy duty switch terminal blocks with blade DIN 3 Terminal block with 2 springs and 1 test + 1 interconnection on each side.

entrelec terminal block

Abstract: RC555 RC510 RC55 PR5 0168 ENTRELEC
Contextual Info: T02041 001229 Terminal blocks spring connection D 2,5/5.D2.L Spacing 5 mm +0,05 .197" double deck Standard DIN 3 Standard terminal blocks spacing 5 mm. End stop th. 9,0 mm BADL V0 End stop th. 9,1 mm BAMH V0 End stop th. 9,1 mm BAMH V2 Other end stops: See Accessories section

Transistor PJ 431

Abstract: T0-204MA PLA relay 2 c/o -MCC-12D-5A-WB PTC430 transistor w 431 h a 431 transistor PLA relay 1 c/o -MCC-12D-5A-WB
Contextual Info: 6115950 MICROSEMI CORP/POWER 71C 71 00322 p r - J J . r ? DE I h l l S T S O 0000325 1 | Series PTC 430, PTC 401 HighVoltoge NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating —400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

2N4071

Abstract: 2N6277 JANTX 2N6277 2N4070
Contextual Info: A POWERHOUSE BIPOLAR Î 11 NPN PLANAR POWER T R A N S IS T O R S PACKAGE T0-204 TO-3 * ’A DEVICE TYPE PEAK ßVcEO 'c VOLTS AMPS VCE (sal) hFE min/max •C @ V CE A V max VOLTS c A @ 'b A 2N4070 100 10.0 40-120 5.0/5.0 0.6 5.0/0.5 2N4071 150 10.0 40-120

Contextual Info: fX S ific o n ix SMM11P20 in c o r p o r a te d P-Channel Enhancement Mode Transistor T0-204AA TO-3 BOTTOM VIEW PRODUCT SUMMARY V (BR)DSS r DS(ON) •d (V) (A) (A) -200 0.50 -1 1 1 DRAIN (CASE) 2 GATE 3 SOURCE ABSO LU TE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

transistor 206

Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3

IRFP240

Abstract: IRFP141 IRF140 IRF141 IRFP140 MTP4N45 MTP4N50
Contextual Info: N-Channel Power MOSFETs continued 2 30 1200 300 80 C4 1.0 1.5 2 30 1200 300 80 C4 4 0.25 0.085 15 60 1600 800 300 E1 2 4 0.25 0.085 15 60 1600 800 300 E1 17 2 4 0.25 0.085 15 60 1600 800 300 E1 29 19 2 4 0.25 0.085 15 60 1600 800 300 E^l 100 24 15 2 4 0.25

Contextual Info: HARRIS SEMICOND SECTOR S7E » • 43022^1 GQ2G427 T H H A S File Number 1_PowerTransistors . GE10000-GE10009 15.77 S ilico n N-P-N Darlington Pow er T ra n sisto rs TERM INAL DESIGNATIONS 'c F U N Q E

new-era voltage regulator

Abstract: 78P12 T0-204MA 78P12SC New Era Electronics 78P12ASP 78P12ASC 78P12ASM
Contextual Info: NEU ERA/ NEW ERA ELEKS DB D e t.SbSTS2 G00QDÜ7 □ ^ T - S S -H -Ì3 Æ & Hew Era \îiï; Electronics October A division o f New Km Croup Inc. The Power. . . The Vision """SIMM! ^¡»aiïlpiaii sVOLTÄGEÄREGULATOR llp â Æfe DESCRIPTION The 78P 12 positive 3 term inal fixed linear voltage regu lator is capable of delivering

Contextual Info: This N-Channel Power MOSFETs z > Material National COOLFETsTM Semiconductor Copyrighted Case Style Pd W Tc = 25°C V D SS (V) Min l0 @ Tc = 25°C (A) Tc = 100°C (A) IRF350CF T0-204AE (42) T0-3P (43) T0-3P (43) TO-204AE (42) TO-3P (43) T0-3P (43) 150 400

CMD8

Contextual Info: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)

Contextual Info: S c h o ttk y R e ctifie r s D241 , SD24 ' Z I-5 ° W | W ° 2 Dim. Inches Minimum CASE D=DOUBLER A B C D E F G H J K L M 'V CASE A=ANODE ’t j } ' _ .250 .435 .038 1.177 .655 .420 — .151 .205 — — M illim eter Maximum Minimum Maximum Notes _ .875

IRH3130

Abstract: IRH4130 IRH7130 IRH8130
Contextual Info: PD - 90676D RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AA/AE IRH7130 100V, N-CHANNEL ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7130 IRH3130 IRH4130 IRH8130 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si)

lm1083

Abstract: 5962-8777601XX 7703407XA IP137MAHVSMD05 5962-8767502UA 5962-8855301ux 7703401ua IP140ME-15 FM362 IP7905AG
Contextual Info: Hi Rel Linear Guide Linear voltage regulators for high reliability applications Linear Regulator Contents Positive Fixed Voltage 2-4 Negative Fixed Voltage 5-7 Positive Adjustable Voltage Linear Regulator 8-9 Negative Adjustable Voltage Linear Regulator 9

IXGH17N100

Contextual Info: BIXYS jjjjjB jjj Low VCHH0IGBT High speed IGBT IXGH/IXGM17N100 IXGH/IXGM17 N100A VC E S ^C25 v C E sat 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V « Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 M fi

RFK30N12

Abstract: RFK30N15
Contextual Info: Standard Power MOSFETs RFK30N12, RFK30N15 File Number 1455 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM D 30 A, 120 V - 150 V ros on =0.075 Q Features: • SO A is power-dissipation lim ited