STD9N10 Search Results
STD9N10 Datasheets (13)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| STD9N10 | STMicroelectronics | N-CHANNEL 100V - 0.23 & - 9A DPAK/IPAK MOSFET TRANSISTOR | Original | 282.83KB | 12 | ||
| STD9N10 | STMicroelectronics | OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN | Original | 391.33KB | 10 | ||
| STD9N10 | STMicroelectronics | OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN | Original | 130.14KB | 10 | ||
| STD9N10 | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| STD9N10-1 | STMicroelectronics | N-CHANNEL 100V - 0.23 & - 9A DPAK/IPAK MOSFET TRANSISTOR | Original | 282.83KB | 12 | ||
| STD9N10-1 | STMicroelectronics | N-Channel Enhancement Mode Power MOS Transistor | Original | 391.33KB | 10 | ||
| STD9N10L | STMicroelectronics | OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN | Original | 65.7KB | 6 | ||
| STD9N10L | STMicroelectronics | N - CHANNEL 100V - 0.22W - 9A - IPAK/DPAK POWER MOS TRANSISTOR | Original | 44.46KB | 6 | ||
| STD9N10L | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| STD9N10L-1 | STMicroelectronics | N-Channel 100 V - 0.22 ohm - 9 A IPAK Power MOS Transistor | Original | 65.7KB | 6 | ||
| STD9N10LT4 | STMicroelectronics | N-Channel 100 V - 0.22 ohm - 9 A DPAK Power MOS Transistor | Original | 65.7KB | 6 | ||
| STD9N10T4 | STMicroelectronics | N-Channel Enhancement Mode Power MOS Transistor | Original | 391.33KB | 10 | ||
| STD9N10T4 | STMicroelectronics | N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR | Original | 284.36KB | 12 |
STD9N10 Price and Stock
SGS‑Thomson Microelectronics STD9N10T4Trans MOSFET N-CH 100V 9A 3-Pin(2+Tab) DPAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STD9N10T4 | 2,246 | 1 |
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STMicroelectronics STD9N10T4Trans MOSFET N-CH 100V 9A 3-Pin(2+Tab) DPAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STD9N10T4 | 500 |
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STD9N10T4 | 1,027 |
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STD9N10T4 | 5,000 |
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SGS Thomson STD9N10T4TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,9A I(D),TO-252 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STD9N10T4 | 1,796 |
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Buy Now | |||||||
| STD9N10T4 | 1,796 |
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Buy Now | ||||||||
SGS Semiconductor Ltd STD9N10MOSFET N-Channel 100V 9A TO-252-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STD9N10 | 1,165 |
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STD9N10 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
D9N10
Abstract: STD9N10 STD9N10-1 STD9N10T4 DPak Package dimensions
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std9n10std9n10-1o-251o-252+3 | |
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Contextual Info: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A - IPAK/DPAK POWER MOS TRANSISTOR TYPE STD20N03L • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 30 V < 0.02 Ω 20 A (*) TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC |
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std9n10lstd20n03l100oc175oc+2 | |
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Contextual Info: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD9N10L 100 V < 0.27 Ω 9A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC |
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std9n10l100oc175oco-252+1 | |
STD9N10Contextual Info: STD9N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST D9N10 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.27 Ω 9 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC |
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std9n10d9n10100oc175oc+2 | |
STD9N10LContextual Info: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE STD9N10L • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.27 Ω 9 A TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC |
Original |
std9n10l100oc175oco-252+1 | |
STD9N10Contextual Info: STD9N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD9N10 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.27 Ω 9A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC |
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std9n10100oc175oco-251+1 | |
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Contextual Info: SGSTHOMSON STD 9N 1o ULieraOôKêi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD9N10 V dss RDS on Id 100 V < 0.27 a 9A • . . . . . . ■ TYPICAL FtDS(on) = 0.23 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCH E TESTE D REPETITIVE AVALANCHE DATA AT 100°C |
OCR Scan |
std9n10o-251o-2520068772-b | |
STD9N10LContextual Info: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD9N10L 100 V < 0.27 Ω 9A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC |
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std9n10l100oc175oco-252+1 | |
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Contextual Info: STD9N10L N - CHANNEL 100V - 0.22Q - 9A - IPAK/DPAK POWER MOS TRANSISTOR TYPE V STD 20N 03L d s s 30 V R d Id S o ii < 0.02 Q. 20 A (*) . . . . . . . . TYPICAL RDs(on) = 0.22 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C |
OCR Scan |
std9n10lo-252o-2510068772-b | |
STD9N10LContextual Info: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD9N10L 100 V < 0.27 Ω 9A TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY |
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std9n10l100oc175oco-252+1 | |
D9N10
Abstract: STD9N10 STD9N10-1 STD9N10T4 T432 airbag
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Original |
std9n10std9n10-1o-251o-252+4 | |
mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
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mosfet cross referencepower mosfet cross reference guide2sk2146cross reference power mosfet+6 | |
fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14 | |
mps2112
Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
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sg388/dmay-2002r14525sg388+10 | |
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IRF9310
Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
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device2176r14153cr108/dirf9310+9 | |
ste30na50
Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
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ot-223stn4ne03lstn4ne03stn3ne06+15 | |
std2n52
Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
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2sk11192sk11202sk11512sk1152+16 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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5ke100a5ke100ca5ke10a5ke10ca+16 | |
IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
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rfp6n50rfd16n03lsmrfp15n05lrfp50n05+16 | |
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Contextual Info: * 7# TYPE S TD 9N 10 SGS-THOMSON [MOeiMillLieraeiDIgS S T D 9 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 100 V < 0 .2 7 Q. 9 A TYPICAL RDS(on) = 0.23 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C |
OCR Scan |
o-251o-252 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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2n70002n70022sj3772sj378+16 | |
irf840 power supply
Abstract: STP3020L STP38NF06L STP6NB90FP STe30na50 STP4NB90 STN1NB80 IRF740 sT55n STD1NB60
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o-220stp12pf06stp80nf03l-04stp80ne03l-06+16 | |
SSH6N80
Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
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buz10buz11buz11abuz71+16 | |
NTD18N06
Abstract: BSS84L BSS138L mtd3055et4 transistor equivalent mtp2955v ngb15n41 DL135 sot 223 marking code AH amplifier, sot-89, H1 MGSF1N02L
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sgd507/dfeb-2002r14525ntd18n06+9 | |