STD17N05 Search Results

STD17N05 Datasheets (12)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
STD17N05		STMicroelectronics	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN	Original	PDF	182.29KB	10
STD17N05		STMicroelectronics	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN	Original	PDF	383.32KB	10
STD17N05		Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
STD17N05-1		STMicroelectronics	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR	Original	PDF	182.27KB	10
STD17N05-1		STMicroelectronics	N - Channel Enhancement Mode Power MOS Transistor	Original	PDF	383.33KB	10
STD17N05L		STMicroelectronics	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN	Original	PDF	369.46KB	10
STD17N05L		STMicroelectronics	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN	Original	PDF	174.74KB	10
STD17N05L		Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
STD17N05L-1		STMicroelectronics	N-Channel Enhancement Mode Low Threshold Power MOS Transistor	Original	PDF	369.46KB	10
STD17N05LT4		STMicroelectronics	N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR	Original	PDF	174.72KB	10
STD17N05T4		STMicroelectronics	N - Channel Enhancement Mode Power MOS Transistor	Original	PDF	383.33KB	10
STD17N05T4		STMicroelectronics	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR	Original	PDF	182.27KB	10

STD17N05 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
17N06L Contextual Info: £ jï S G S -1H 0 M S 0 N ULKgraMOeS S T D 17N0 5 L S T D 17N0 6 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss RDS on Id STD17N05L 50 V < 0.0 8 5 Q. 17 A STD17N06L 60 V < 0.0 8 5 Q. 17 A • . . . . . . . TYPICAL RDS(on) = 0.065 £2	OCR Scan	std17n05l std17n06l o-251 o-252 +117n06l	PDF
transistor A4t 85 Contextual Info: S G S -T H O M S O N S T D 1 7 N 0 5 L r a n c œ iiiL iC T iû iia D e i S T D 1 7 N 0 6 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss RDS on Id STD17N05L 50 V < 0.085 Û 17 A STD17N06L 60 V < 0.085 Q 17 A TYPICAL RDS(on) = 0.065 D,	OCR Scan	std17n05l std17n06l o-251 o-252 +4std17n05l/std17n06l 0068772-b gg72721 transistor a4t 85	PDF
17N06 Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « S T D 17N05 S T D 17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss R DS on Id STD17N05 50 V < 0.085 Q. 17 A STD17N06 60 V < 0.085 Q. 17 A • TYPICAL RDS(on) = 0.06 Q . . AVALANCHE RUGGED TECHNOLOGY	OCR Scan	17n05 17n06 std17n05 std17n06 +3o-251 o-252 std17n05/std17n06	PDF
STD17N05L Abstract: STD17N06L Contextual Info: STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05L 50 V < 0.085 Ω 17 A STD17N06L 60 V < 0.085 Ω 17 A TYPICAL RDS(on) = 0.065 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	std17n05l std17n06l 100oc 175oc +2o-251 o-252	PDF
STD17N05 Abstract: STD17N06 Contextual Info: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	std17n05 std17n06 100oc 175oc +2o-251 o-252	PDF
STD17N05 Abstract: STD17N06 Contextual Info: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	std17n05 std17n06 100oc 175oc +2o-251 o-252	PDF
STD17N05 Abstract: STD17N06 Contextual Info: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	std17n05 std17n06 100oc 175oc +2o-251 o-252	PDF
STD17N05L Abstract: STD17N06L Contextual Info: STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V DSS R DS on ID STD17N05L TYPE 50 V < 0.085 Ω 17 A STD17N06L 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.065 Ω AVALANCHE RUGGED TECHNOLOGY	Original	std17n05l std17n06l 100oc 175oc +2o-251 o-252	PDF
STD17N05L Abstract: STD17N06L Contextual Info: STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05L 50 V < 0.085 Ω 17 A STD17N06L 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.065 Ω AVALANCHE RUGGED TECHNOLOGY	Original	std17n05l std17n06l 100oc 175oc +2o-251 o-252	PDF
STD17N05 Abstract: STD17N06 Contextual Info: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	std17n05 std17n06 100oc 175oc +2o-251 o-252	PDF
D17N05 Abstract: 7n05 7n06 Contextual Info: *57 SGS-THOMSON iL iO M iQ s td i7N05 £ I S T D 1 7 N 0 6 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE R DS(on) Id STD17N05 V 50 V < 0.085 a 17 A STD17N06 60 V < 0.085 ß 17 A dss • • . ■ ■ . ■ ■ T Y P IC A L RDS(on) = 0.06 Q A V A LA N C H E R U G G ED T E C H N O LO G Y	OCR Scan	std17n05 std17n06 d17n05 7n05 +17n06	PDF
TDA0161 equivalent Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:	OCR Scan	tda0161 equivalent 1n3393 bdx54f equivalent byt301000 +6bux transient voltage suppressor st90r9 ua776mh sgs 2n3055 transistor morocco mje13007 inmos transputer reference manual	PDF
ste30na50 Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20 Contextual Info: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0	Original	ot-223 stn4ne03l stn4ne03 stn3ne06 +15stn3ne06l stn2n10 stn2ne10l stn1n20 stn1nb80 ste30na50 stp3n60fi ste45n50 sthv82 stk2n50 ste24n90 stb55n06 ste38na50 stp55ne06fp stb40n03l-20	PDF
std2n52 Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232	Original	2sk1119 2sk1120 2sk1151 2sk1152 +162sk1153 2sk1154 2sk1155 2sk1156 2sk1157 2sk1158 std2n52 stp2na60 buz102 equivalent ssh6n80 rfp60n06 replacement for irl2203n buz91 equivalent rfp60n06le irfp460 cross reference buz91a equivalent	PDF

YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2n7000 2n7002 2sj377 2sj378 +162sj380 2sj401 2sj402 2sj407 2sj412 2sj419 yta630 mtw14p20 bss125 mtaj30n06hd 2sk2837 equivalent smu10p05 smp60n06 replacement ste180n10 rfh75n05e irfd620	PDF
SSH6N80 Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50 Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L	Original	buz10 buz11 buz11a buz71 +16buz71a buz72a buz80a irf520 irf530 irf540 ssh6n80 rfp60n06 irf3205 ir buk417-500ae sfp70n03 buz91a 2sk2717 stmicroelectronics buz22 ixfh13n50	PDF
SSH6N80 Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205	Original	2sk1119 2sk1120 2sk1151 2sk1152 +162sk1153 2sk1154 2sk1155 2sk1156 2sk1157 2sk1158 ssh6n80 irf640 equivalent buz100 equivalent ste38na50 irf540 equivalent stp2na60 buz10 equivalent buk444 equivalent 2sk2700 equivalent buz71 equivalent	PDF