SPP08P06P Search Results

SPP08P06P Datasheets (6)

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Infineon Technologies

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SPP08P06P	Infineon Technologies	P-Channel Enhancement mode Avalanche rated d v/d t rated 175Â°C operating temperature	Original	PDF	98.59KB	9
SPP08P06P	Infineon Technologies	P-Channel MOSFETs; Package: PG-TO220-3; Package: TO-220; V_DS (max): -60.0 V; R_{DS (on)} (max) (@10V): 300.0 mOhm; R_{DS (on)} (max) (@4.5V): -; R_{DS (on)} (max) (@2.5V): -;	Original	PDF	324.66KB	10
SPP08P06PBKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 8.8A TO-220AB	Original	PDF	100.67KB
SPP08P06PH	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 8.8A TO-220	Original	PDF		10
SPP08P06PHXKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 8.8A TO-220	Original	PDF	481.88KB
SPP08P06PXK	Infineon Technologies	P-CHANNEL POWER MOSFET	Original	PDF	490.68KB

SPP08P06P Price and Stock

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Infineon Technologies AG


Infineon Technologies AG SPP08P06PHXKSA1 Trans MOSFET P-CH 60V 8.8A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SPP08P06PHXKSA1		143			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SPP08P06PHXKSA1		10,337			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPP08P06PXK MOSFET P-Channel 60V 8.8A (Tc) TO-220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	SPP08P06PXK		205		1	1 - 10 - 100 $0.37 1000 $0.31 10000 $0.28	Buy Now
Infineon Technologies AG SPP08P06P SIPMOS POWER-TRANSISTOR Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SPP08P06P		485			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPP08P06PHXK Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	SPP08P06PHXK		593			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPP08P06PG Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	SPP08P06PG		577			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SPP08P06P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
P-TO26 Abstract: Q67040-S4233 Contextual Info: SPP08P06P SPB08P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated ·	Original	spp08p06p spb08p06p p-to220-3-1 q67040-s4729 +3p-to263-3-2 q67040-s4233 p-to26	PDF
SPP08P06P Abstract: *08P06P SPP08P06PH Contextual Info: SPP08P06P H SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated · 175°C operating temperature	Original	spp08p06p iec61249-2-21 pg-to220-3 08p06p +1spp08p06ph	PDF
SPP08P06P Abstract: SPP08P06P H PG-TO220-3 Contextual Info: SPP08P06P G SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated · 175°C operating temperature	Original	spp08p06p pg-to220-3 spp08p06p h	PDF
*08P06P Abstract: SPP08P06P Q67040-S4729 spp08p Contextual Info: SPP08P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated · 175°C operating temperature	Original	spp08p06p pg-to220-3-1 q67040-s4729 08p06p +1spp08p	PDF
Contextual Info: SPP08P06P G SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated · 175°C operating temperature	Original	spp08p06p pg-to220-3	PDF
Contextual Info: SPP08P06P G SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated · 175°C operating temperature	Original	spp08p06p pg-to220-3	PDF
08p06p Abstract: TRANSISTOR C 460 Q67040-S4233 SPB08P06P Contextual Info: Preliminary Data SPP 08P06P SPB 08P06P SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature Type VDS ID RDS on SPP08P06P -60 V -8.8 A 0.3 Ω Pin 1 Pin 2 Pin 3 G D S Package Ordering Code	Original	08p06p spp08p06p spb08p06p p-to220-3-1 +4q67040-s4729-a2 p-to263-3-2 q67040-s4233 transistor c 460	PDF
Q67040-S4233 Abstract: SPP08P06P SPB08P06P Contextual Info: SPP08P06P SPB08P06P Preliminary data SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A ·	Original	spp08p06p spb08p06p p-to220-3-1 q67040-s4729 +2p-to263-3-2 q67040-s4233	PDF
SPB08P06P Contextual Info: Infineon SPP08P06P SPB08P06P Preliminary data technologies SIPMOS Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V • Enhancement mode Drain-Source on-state resistance ñ DS on 0.3 Q. • Avalanche rated Continuous drain current	OCR Scan	spp08p06p spb08p06p p-t0220-3-1 q67040-s4729 +2p-t0263-3-2 q67040-s4233	PDF
Q67040-S4729-A2 Abstract: SPB08P06P Siemens 90 88 SPP08P06 Contextual Info: SIEMENS SPP08P06P SPB08P06P Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode V=TD5155 • Avalanche rated V P T 0 5 16 4 • dv/dt rated • 175°C operating temperature Type SPP08P06P VDS -60 V h -8.8 A ^DSiont 0.3 & Pin 1 Pin 2	OCR Scan	spp08p06p spb08p06p p-t0220-3-1 q67040-s4729-a2 +3p-t0263-3-2 siemens 90 88 spp08p06	PDF
SPP08P06P Abstract: *08P06P Contextual Info: SPP08P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated · 175°C operating temperature	Original	spp08p06p p-to220-3 08p06p	PDF
S 170 MOSFET TRANSISTOR Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book Contextual Info: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and	Original	b152-h8203-g4-x-7600 s 170 mosfet transistor 8203 dual mosfet s 170 mosfet +7sot323 mosfet p mosfet switching frequency ips09n03la p-channel power mosfet so-8 tda21102 mosfet all mosfet equivalent book	PDF
igbt welding machine scheme Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3 Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and	Original	igbt welding machine scheme ikw40n120h3 aircon l1 smd diode schottky code marking sj +6transistor marking code 12w sot-23 24v application with ice3ar0680jz induction cooker fault finding ipw65r041 igw40n60h3 spw55n80c3	PDF
3bs02 Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather	Original	infineo866-95 b152-h8926-g2-x-7600 nb08-1069 3bs02 +92bs01 08p06p tda 16888 ice2pcs02 tda16846 ice3b1565j mosfet 18p06p tda4605 ice3b0365j	PDF

FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	gp-20 fsq510 equivalent bta12 6008 bta16 6008 +7zigbee interface with avr atmega16 precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 a564 transistor bsm25gp120 b2	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 f155-6a f155-10a f165-15a +11f175-25a irfb4115 bty79 equivalent diode skn 21-04 marking code w04 sot-23 bbc 598 479 diode mw 137 600g tfk 401 s 673 vishay telefunken tfk transistor infineon transistor marking w31 jys marking transistor	PDF
PG-TO263-3-2 Abstract: SPB08P06P SPP08P06P Contextual Info: SPB08P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated · 175°C operating temperature	Original	spb08p06p p-to263-3-2 q67040-s4233 pg-to263-3-2 +3sp0000-96088 70angerous spp08p06p	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	ao4405 ao4407 ao4408 ao4409 +16ao4410 ao4411 ao4413 ao4415 ao4422 ao4700 irf1830g irf1830 transistor irf1830g apm2054n equivalent apm2054n ap85l02h ap70n03s 2sk3683 ap70l02h 2sk2696	PDF
IRF7205 Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210 Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY	OCR Scan	bss84 bss92 bs250 bss83 +11irf5210s t0263 irfd9210 irfd9220 irfd9110 irfd9120 irf7205 irf7342 ixth7p50 t0-220ab irfp9240	PDF
T0252AA Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y	OCR Scan	si4465dy si4965dy irf7204 irf7304 +11si4963dy si9430dy si9435dy si9933ady si9953dy irf7205 t0252aa t0263 bss83 irfr5305 t0-220ab	PDF
PX3544 Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly	Original	lead519 b152-h9345-g2-x-7600 px3544 px7510 +8px3560 ice2as01 equivalent px3540 primarion px3540 ice3br0665j primarion px3560 ice3br4765 ice3br1765j	PDF
600V igbt dc to dc buck converter Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]	Original	b192-h6780-g11-x-7600 sp000008186 vdsl6100i-e 600v igbt dc to dc buck converter +9transistor smd code package sot89 bts 2140 1b data sheet transistor smd code package sot23 psb 6970 hl v1.3 pef 24628 e v1.2-g infineon psb 6970 pef 4265 t v2.1 ht 1200-4 slb 9635	PDF
ICE3B0365J Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)	Original	spp21n50c3 spa21n50c3 spi21n50c3 spp16n50c3 +16spa16n50c3 spi16n50c3 spw21n50c3 spp12n50c3 spa12n50c3 spi12n50c3 ice3b0365j ice3br4765j tda16888 ice2a765p2 ice2pcs01g ice1pcs02g ice2b0565 ice1pcs02 ice2pcs02 ipi60r099cp	PDF
BUP213 Abstract: BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327 Contextual Info: Mosfets TO-218AB TO-220AB and TO-220 1-G TO-220FP TO-247 1 G 2 D 3 S 1-G 1-G 2-C 2-D 3-E TO-262 NEW! 3-S D-PAK, D2-PAK and TO-252 D D 2 S 3-S 3 SO-8 Dual G2 S2 1 3-D D2 D2 D 5 3-S 2-D G2 1 D 2 D G1 G 1 D1 4 3 2 2 1 G 6 7 D 8 D D 8 7 D 6 D 2-D 4 D D C 3 2S	Original	o-218ab o-220ab o-220 o-220fp +16o-247 o-262 o-252 o-263 ot-323 ot-363 bup213 bss123l6327 bss123e6327 bup314d ipd06n03lag bsp170pe6327t bsp315 spd06n80c3xt bsp295-l6327 bsp129e6327	PDF

SPP08P06P Search Results

SPP08P06P Datasheets (6)

SPP08P06P Price and Stock

Infineon Technologies AG SPP08P06PHXKSA1

Infineon Technologies AG SPP08P06PXK

Infineon Technologies AG SPP08P06P

Infineon Technologies AG SPP08P06PHXK

Infineon Technologies AG SPP08P06PG

SPP08P06P Datasheets Context Search

P-TO26

SPP08P06P

SPP08P06P

*08P06P

08p06p

Q67040-S4233

SPB08P06P

Q67040-S4729-A2

SPP08P06P

S 170 MOSFET TRANSISTOR

igbt welding machine scheme

3bs02

FSQ510 Equivalent

irfb4115

PG-TO263-3-2

IRF1830G

IRF7205

T0252AA

PX3544

600V igbt dc to dc buck converter

ICE3B0365J

BUP213