SPD02 Search Results

SPD02 Datasheets (22)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SPD025980	Luxo	Optical Inspection Equipment - Accessories - SP SUCTION LENS 4D	Original	PDF	222.1KB
SPD026586	Luxo	Optical Inspection Equipment - Accessories - HANDLE WHITE	Original	PDF	238.27KB
SPD026587	Luxo	Optical Inspection Equipment - Accessories - HANDLE LT GRAY	Original	PDF	237.97KB
SPD026588	Luxo	Optical Inspection Equipment - Accessories - HANDLE BLACK	Original	PDF	237.98KB
SPD02N50C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	269.87KB	11
SPD02N50C3BTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY	Original	PDF	618.4KB
SPD02N60	Siemens		Original	PDF	1.09MB	7
SPD02N60	Siemens	SIPMO Power Transistor	Original	PDF	85.47KB	9
SPD02N60	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SPD02N60C3	Infineon Technologies	CoolMOS Power MOSFET, 600V, DPAK, RDSon=3.00 ?, 1.8A	Original	PDF	164.83KB	11
SPD02N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	147.1KB	13
SPD02N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	297.76KB	12
SPD02N60C3BTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 1.8A DPAK	Original	PDF	619.96KB
SPD02N60S5	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; V_DS (max): 600.0 V; Package: DPAK (TO-252); R_DS(ON) @ T_J=25Â°C V_GS=10: 3,000.0 mOhm; I_D(max) @ T_C=25Â°C: 1.8 A; I_Dpuls (max): 3.2 A;	Original	PDF	727.13KB	11

SPD02N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	263.71KB	10
SPD02N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	253.15KB	10
SPD02N60S5	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SPD02N60S5BTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 1.8A TO-252	Original	PDF	714.96KB
SPD02N80C3	Infineon Technologies	for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...	Original	PDF	325.67KB	11
SPD02N80C3	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; V_DS (max): 800.0 V; Package: DPAK (TO-252); R_DS(ON) @ T_J=25Â°C V_GS=10: 2,700.0 mOhm; I_D(max) @ T_C=25Â°C: 2.0 A; I_Dpuls (max): 6.0 A;	Original	PDF	278.34KB	10

SPD02 Price and Stock

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Infineon Technologies AG SPD02N80C3 Transistor: N-MOSFET; 800V; 2A; DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SPD02N80C3		7,500		45	1 - 10 - 100 $0.86 1000 $0.72 10000 $0.72	Buy Now
Verical	SPD02N80C3		7,500		64	1 - 10 - 100 $1.11 1000 $1.11 10000 $1.11	Buy Now
OMRON Corporation A22NE-S-PD02-N Switch: emergency stop; 22mm; Stabl.pos: 2; NC x2; red; none; IP65
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	A22NE-S-PD02-N				1	1 $52.94 10 $45.88 100 $45.88 1000 $45.88 10000 $45.88	Get Quote
Mouser Electronics	A22NE-S-PD02-N					1 $76.05 10 $72.94 100 $69.09 1000 $69.09 10000 $69.09	Get Quote
Infineon Technologies AG SPD02N80C3ATMA1 Transistor: N-MOSFET; unipolar; 800V; 2A; 42W; DPAK,TO252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SPD02N80C3ATMA1				2,500	1 - 10 - 100 - 1000 - 10000 $0.46	Get Quote
Verical ()	SPD02N80C3ATMA1		50,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.64	Buy Now
	SPD02N80C3ATMA1		2,495		3	1 - 10 $0.61 100 $0.61 1000 $0.61 10000 $0.61	Buy Now
	SPD02N80C3ATMA1		897		15	1 - 10 - 100 $0.42 1000 $0.42 10000 $0.42	Buy Now
Avnet Americas	SPD02N80C3ATMA1	Tape & Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.40	Buy Now
Mouser Electronics	SPD02N80C3ATMA1		80			1 $1.91 10 $0.91 100 $0.75 1000 $0.58 10000 $0.48	Buy Now
Arrow Electronics ()	SPD02N80C3ATMA1		50,000	46 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.44	Buy Now
	SPD02N80C3ATMA1	Cut Strips	2,495	46 Weeks	1	1 $1.52 10 $1.52 100 $1.52 1000 $1.52 10000 $1.52	Buy Now
	SPD02N80C3ATMA1	Cut Strips	897	46 Weeks	1	1 $0.42 10 $0.40 100 $0.40 1000 $0.40 10000 $0.40	Buy Now

Newark ()	SPD02N80C3ATMA1	Tape & Reel	11,207		100	1 - 10 - 100 $0.76 1000 $0.59 10000 $0.57	Buy Now
	SPD02N80C3ATMA1	Cut Tape	11,207		1	1 $1.80 10 $1.80 100 $0.76 1000 $0.59 10000 $0.57	Buy Now
Rochester Electronics	SPD02N80C3ATMA1		580		1	1 - 10 - 100 $0.56 1000 $0.47 10000 $0.42	Buy Now
EBV Elektronik	SPD02N80C3ATMA1			25 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPD02N50C3BTMA1 Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	SPD02N50C3BTMA1		129,268		729	1 - 10 - 100 - 1000 $0.47 10000 $0.42	Buy Now
	SPD02N50C3BTMA1		66,750		729	1 - 10 - 100 - 1000 $0.47 10000 $0.42	Buy Now
	SPD02N50C3BTMA1		15,000		729	1 - 10 - 100 - 1000 $0.47 10000 $0.42	Buy Now
	SPD02N50C3BTMA1		5,000		729	1 - 10 - 100 - 1000 $0.47 10000 $0.42	Buy Now
	SPD02N50C3BTMA1		22		19	1 - 10 - 100 $0.31 1000 $0.31 10000 $0.31	Buy Now
Arrow Electronics	SPD02N50C3BTMA1	Cut Strips	22	99 Weeks	1	1 $0.32 10 $0.31 100 $0.31 1000 $0.31 10000 $0.31	Buy Now
Rochester Electronics	SPD02N50C3BTMA1		216,018		1	1 - 10 - 100 $0.46 1000 $0.38 10000 $0.34	Buy Now
Vyrian	SPD02N50C3BTMA1		8,603			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPD02N60S5BTMA1 Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	SPD02N60S5BTMA1		12,500		656	1 - 10 - 100 - 1000 $0.53 10000 $0.47	Buy Now
	SPD02N60S5BTMA1		870		656	1 - 10 - 100 - 1000 $0.53 10000 $0.47	Buy Now
Rochester Electronics	SPD02N60S5BTMA1		13,370		1	1 - 10 - 100 $0.51 1000 $0.42 10000 $0.38	Buy Now

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SPD02 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SP*02N60 Abstract: P-TO252 SPD02N60 SPU02N60 Contextual Info: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified	Original	spd02n60 spu02n60 p-to252 p-to251 +3q67040-s4133 q67040-s4127-a2 sp*02n60	PDF
02N60C3 Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6 Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +5q67040-s4420 02n60c3 02n60 gpt09051 02n6	PDF
02N80C3 Abstract: JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c Contextual Info: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spd02n80c3 pg-to252-3 02n80c3 jesd22 +3transistor d12 t smd g47 02n80c	PDF
02N50C3 Abstract: 02N5 Q67040-S4570 SPD02N50C3 TRANSISTOR SMD MARKING CODE 490 Contextual Info: SPD02N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	spd02n50c3 p-to252-3-1 q67040-s4570 02n50c3 +202n5 transistor smd marking code 490	PDF
02N60S5 Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252 Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251-3-1 +3q67040-s4226 02n60s5 02n60	PDF
Contextual Info: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spd02n80c3 pg-to252-3 02n80c3	PDF
SPD02N60S5 Abstract: 02N60S5 P-TO252 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251 +2q67040-s4226 02n60s5	PDF
SP*02N60 Abstract: transistor smd hq Contextual Info: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated V P T 0905 1 Type SPD02N60 ^DS h 600 V 2 A Pin 1 Pin 2 Pin 3 G D S f î DS on (a) VGS Package Ordering Code 5.5 Q, Vgs = 10 V P-T0252	OCR Scan	spd02n60 spu02n60 p-t0251 q67040-s4133 +5q67040-s4127-a2 p-t0252 135ical sp*02n60 transistor smd hq	PDF
02N60S5 Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252	Original	spu02n60s5 spd02n60s5 p-to251-3-1 q67040-s4226 +5p-to252 q67040-s4213 02n60s5 gpt09051 transistor 02n60s5	PDF
02N60C3 Abstract: P-TO252 SPD02N60C3 SPU02N60C3 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +2q67040-s4420 02n60c3	PDF
02N80C3 Contextual Info: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spd02n80c3 pg-to252-3 02n80c3	PDF
Contextual Info: last update februari 28, 2011 DATASHEET SPD025SAsilUBS reference spd025sasilubsn.doc page 1/1 DIFFERENTIAL PRESSURE SENSOR WITH COMPENSATED ANALOGUE OUTPUT: SPD025SAsilUBS SPD025SAsilUBS This Smartec pressure sensor has an amplified analogue output. The sensor is compensated for	Original	spd025sasilubs spd025sasilubsn 025sa	PDF
DD35 Abstract: 02N60C3 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +3q67040-s4420 02n60c3 dd35	PDF
02N60 Abstract: SPD02N60S5 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251-3-1 +3q67040-s4226 q67040-s4213 02n60	PDF

02N60S5 Abstract: smd 0306 package SPD02N60S5 SPU02N60S5 02N60 Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 pg-to252 pg-to251 +5q67040-s4226 q67040-s4213 02n60s5 smd 0306 package 02n60	PDF
SPD02N80C3 Abstract: 02N80C3 Q67040-S4635 55-AK Contextual Info: SPD02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 2.7 Ω ID 2 A P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code	Original	spd02n80c3 p-to252-3-1 q67040-s4635 02n80c3 +155-ak	PDF
Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 3 Ω ID 1.8 A • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 pg-to252 pg-to251 +2q67040-s4226 02n60s5	PDF
02N60c3 Abstract: 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +5q67040-s4420 02n60c3 02n60 eas50 diode marking code 623	PDF
02n60s5 Abstract: Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42 Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 pg-to252 pg-to251 +8q67040-s4226 02n60s5 transistor 02n60s5 02n60 pg-to252-3-11 transistor smd marking code transistor smd marking code 1a transistor smd marking code 42	PDF
02n60 Abstract: SPD02N60S5 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251-3-1 +3q67040-s4226 q67040-s4213 02n60	PDF
02N60C3 Abstract: SPD02N60C3 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +2q67040-s4420 02n60c3	PDF
02N60 Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +3q67040-s4420 02n60c3 02n60	PDF
Contextual Info: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A	OCR Scan	spd02n60 spu02n60 vpt09050 p-t0252 +3q67040-s4133 p-t0251 q67040-s4127-a2	PDF
02N6 Abstract: 02N60S5 SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	spu02n60s5 spd02n60s5 spux5n60s5/spdx5n60s5 p-to251-3-1 +402n60s5 q67040-s4226 p-to252 02n6	PDF

SPD02 Search Results

SPD02 Datasheets (22)

SPD02 Price and Stock

Infineon Technologies AG SPD02N80C3

OMRON Corporation A22NE-S-PD02-N

Infineon Technologies AG SPD02N80C3ATMA1

Infineon Technologies AG SPD02N50C3BTMA1

Infineon Technologies AG SPD02N60S5BTMA1

SPD02 Datasheets Context Search

SP*02N60

02N60C3

02N80C3

02N50C3

02N60S5

SPD02N60S5

SP*02N60

02N60S5

02N60C3

02N80C3

DD35

02N60

02N60S5

SPD02N80C3

02N60c3

02n60s5

02n60

02N60C3

02N60

02N6