02N80C Search Results

02N80C3

Abstract: JESD22 PG-TO220-3 SPA02N80C3
Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications

02N80C3

Abstract: JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c
Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications

Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications

C2625

Abstract: 02N80C3 02N8
Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications

02N80C3

Abstract: JESD22 PG-TO220-3 SPP02N80C3 02N8
Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications

02N80C3

Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications

SPD02N80C3

Abstract: 02N80C3 Q67040-S4635 55-AK
Contextual Info: 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 2.7 Ω ID 2 A P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code

02N80C3

Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications

02N80C3

Contextual Info: 02N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 2.7 Ω • Extreme dv/dt rated

02N80C3

Abstract: Transistor d12 t DS800 SPA02N80
Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications

Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 W Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications

MAX7523

Abstract: 02N80C3 02N8
Contextual Info: 02N80C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 2.7 Ω • Extreme dv/dt rated ID 2 A P-TO220-3-1 Type

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 W Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

02N80C3

Abstract: Q67040-S4432 SPA02N80C3 SPP02N80C3 02N8
Contextual Info: 02N80C3 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 2.7 Ω ID 2 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

02N80C3

Abstract: SPP02N80C3 Q67040-S4432
Contextual Info: 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 2.7 Ω ID 2 A P-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code

Contextual Info: 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 2.7 Ω • Extreme dv/dt rated ID 2 A P-TO220-3-1 Type Package

Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 9 Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications