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Walsin Technology Corporation 0402N8R0D500CT Capacitor: ceramic; 8pF; 50V; 50VDC; C0G (NP0); SMD; 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	0402N8R0D500CT		56,500		48,100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	0402N8R0D500CT		187,233			1 $0.10 10 $0.01 100 $0.01 1000 $0.01 10000 $0.00	Buy Now
Bristol Electronics	0402N8R0D500CT		50,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Walsin Technology Corporation 0402N8R2C500CT Capacitor: ceramic; 8.2pF; 50V; C0G (NP0); ±0.25pF; 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	0402N8R2C500CT		9,703		1	1 $0.10 10 $0.02 100 $0.01 1000 $0.01 10000 $0.00	Buy Now
Mouser Electronics	0402N8R2C500CT		99,232			1 $0.10 10 $0.02 100 $0.01 1000 $0.01 10000 $0.00	Buy Now
Bristol Electronics	0402N8R2C500CT		1,000		1	1 $0.02 10 $0.02 100 $0.02 1000 $0.01 10000 $0.01	Buy Now
Infineon Technologies AG SPD02N80C3 Transistor: N-MOSFET; 800V; 2A; DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SPD02N80C3		7,500		45	1 - 10 - 100 $0.84 1000 $0.70 10000 $0.70	Buy Now
Win Source Electronics	SPD02N80C3		14,200			1 - 10 - 100 $0.99 1000 $0.66 10000 $0.66	Buy Now
Walsin Technology Corporation 0402N8R2C500CG Capacitor: ceramic; 8.2pF; 50V; C0G (NP0); 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	0402N8R2C500CG				50,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Walsin Technology Corporation 0402N8R0C500CT Capacitor: ceramic; MLCC; 8pF; 50V; C0G (NP0); SMD; 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	0402N8R0C500CT				10,000	1 - 10 - 100 - 1000 - 10000 $0.00	Get Quote
Mouser Electronics	0402N8R0C500CT		704			1 $0.18 10 $0.02 100 $0.01 1000 $0.01 10000 $0.00	Buy Now

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02N8 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
02N80C3 Abstract: JESD22 PG-TO220-3 SPA02N80C3 Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa02n80c3 pg-to220-3 02n80c3 jesd22	PDF
02N80C3 Abstract: JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spd02n80c3 pg-to252-3 02n80c3 jesd22 +3transistor d12 t smd g47 02n80c	PDF
Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spd02n80c3 pg-to252-3 02n80c3	PDF
C2625 Abstract: 02N80C3 02N8 Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spp02n80c3 pg-to220-3 02n80c3 c2625 +102n8	PDF
02N80C3 Abstract: JESD22 PG-TO220-3 SPP02N80C3 02N8 Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spp02n80c3 pg-to220-3 02n80c3 jesd22 +102n8	PDF
02N80C3 Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spd02n80c3 pg-to252-3 02n80c3	PDF
SPD02N80C3 Abstract: 02N80C3 Q67040-S4635 55-AK Contextual Info: 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 2.7 Ω ID 2 A P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code	Original	spd02n80c3 p-to252-3-1 q67040-s4635 02n80c3 +155-ak	PDF
02N80C3 Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa02n80c3 pg-to220-3 02n80c3	PDF
02N80C3 Contextual Info: 02N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 2.7 Ω • Extreme dv/dt rated	Original	spp02n80c3 p-to220-3-1 q67040-s4432 02n80c3	PDF
02N80C3 Abstract: Transistor d12 t DS800 SPA02N80 Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa02n80c3 pg-to220-3 02n80c3 100ain +3transistor d12 t ds800 spa02n80	PDF
Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 W Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spd02n80c3 pg-to252-3 02n80c3	PDF
MAX7523 Abstract: 02N80C3 02N8 Contextual Info: 02N80C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 2.7 Ω • Extreme dv/dt rated ID 2 A P-TO220-3-1 Type	Original	spp02n80c3 p-to220-3-1 q67040-s4432 02n80c3 +2max7523 02n8	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF
Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 W Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spd02n80c3 pg-to252-3 02n80c3	PDF

BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	b192-h6780-g9-x-7600 d-81669 vdsl5100i-e vdsl6100i-e +10bcm 4336 2a0565 c2335 2a280z c1740 bipolar transistor transistor a1267 a1273 transistor c2335 r 2b0565 2b265	PDF
02N80C3 Abstract: Q67040-S4432 SPA02N80C3 SPP02N80C3 02N8 Contextual Info: 02N80C3 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 2.7 Ω ID 2 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)	Original	spp02n80c3 spa02n80c3 p-to220-3-31 p-to220-3-1 +4p-to-220-3-31 q67040-s4432 02n80c3 02n8	PDF
02N80C3 Abstract: SPP02N80C3 Q67040-S4432 Contextual Info: 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 2.7 Ω ID 2 A P-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code	Original	spp02n80c3 p-to220-3-1 q67040-s4432 02n80c3	PDF
Contextual Info: 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 2.7 Ω • Extreme dv/dt rated ID 2 A P-TO220-3-1 Type Package	Original	spp02n80c3 p-to220-3-1 q67040-s4432 02n80c3	PDF
Contextual Info: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 9 Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spd02n80c3 pg-to252-3 02n80c3	PDF

02N8 Search Results

02N8 Price and Stock

Walsin Technology Corporation 0402N8R0D500CT

Walsin Technology Corporation 0402N8R2C500CT

Infineon Technologies AG SPD02N80C3

Walsin Technology Corporation 0402N8R2C500CG

Walsin Technology Corporation 0402N8R0C500CT

02N8 Datasheets Context Search

02N80C3

02N80C3

C2625

02N80C3

02N80C3

SPD02N80C3

02N80C3

02N80C3

02N80C3

MAX7523

PEF 24628

BCM 4336

02N80C3

02N80C3