SOT343N Search Results

Contextual Info: Reflow soldering footprint Footprint information for reflow soldering SOT343N 2.7 1.85 0.7 0.8 0.875 0.675 0.6 0.5 3x (3x) (3x) solder lands 1 4 solder resist 0.55 1.3 2.5 0.65 2 3 solder paste occupied area Dimensions in mm 0.625 (4x) 0.55 (4x) www.nxp.com

Field-Effect Transistors

Abstract: SOT54variant diodes PACKAGE
Contextual Info: DISCRETE SEMICONDUCTORS Package outlines Small-signal Field-effect Transistors and Diodes 1999 May 11 PACKAGE INFORMATION Page SOD68 . SOD110 . SOD323 . SOD523 . SOT23 . SOT54 . SOT54variant . SOT143B . SOT143R . SOT323 . SOT343N

RF Wideband Transistors

Contextual Info: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .

Contextual Info: SO T3 43N SOT343N SO4; Tape reel SMD; standard product orientation 12NC ending 115 Rev. 1 — 15 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Plastic surface mounted package; 4 leads SOT343N D E B A X HE y v M A e 4 3 Q A A1 c 1 2 b1 bp w M B Lp e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e

Contextual Info: Package outline Plastic surface-mounted package; 4 leads SOT343N D E B A X HE y v M A e 4 3 Q A A1 1 c 2 b1 bp w M B Lp e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3

RF Wideband Transistors

Abstract: MS-012AA
Contextual Info: PACKAGE OUTLINES Package SOT23 SOT54 SOT89 SOT96-1 SOT122A SOT122D SOT122E SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 SOT551A Surface-mount yes no yes yes no no no yes yes no no yes yes yes yes yes yes yes Page . .

SOT343N

Contextual Info: Package outline Philips Semiconductors Plastic surface-mounted package; 4 leads SOT343N D E B A X HE y v M A e 4 3 Q A A1 c 1 2 b1 bp w M B Lp e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y

Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin

BC548 TRANSISTOR REPLACEMENT

Abstract: transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Contextual Info: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

2FP TRANSISTOR

Abstract: BFG520W DB-1MS
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of August 1995 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X PINNING FEATURES • High power gain DESCRIPTION

RF1119

Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
Contextual Info: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

BFG520W

Abstract: SOT343N DIN45004B
Contextual Info: BFG520W; BFG520W/X NPN 9 GHz wideband transistors Rev. 04 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

very simple walkie talkie circuit diagram

Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.

OF IC 7909

Abstract: BFG25AW SOT343N
Contextual Info: DATA SHEET dbook, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Sep 23 NXP Semiconductors Product specification BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors FEATURES PINNING

filter for GPS spice

Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
Contextual Info: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率

MPF102 spice model

Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for

double TRANSISTOR SMD MARKING CODE mc

Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.

BF1118

Abstract: BF1118R BF1118WR DIODE marking S4 06 MARKING CODE CGK
Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 1 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

BFG505W

Abstract: MLC040
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors Product specification Supersedes data of 1998 Oct 02 2000 Oct 30 Philips Semiconductors Product specification BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors