SOT-32 BS Search Results

Contextual Info: BD227 BD229 BD231 J K . SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose pnp transistors in a SOT-32 plastic envelope especially recommended for television circuits. Their complements are BD226, BD228 and BD230.

H7545

Abstract: TR BC 817-25 BCV72 BCW31 BCW32 BCX20 BSS64 SOA05 70G45 B 250 C 100 K4
Contextual Info: a 7 SCS-THOMSON M DÊKOltLiÊTnSOlifflDËi SURFACE MOUNT DEVICES GENERAL PURPOSE & INDUSTRIAL SOT 23 SOT 23 NPN GENERAL PURPOSE TRANSISTORS v CEO •c ptot hpE @ *C UJ VCBO >o Type V (mA) 50* 50* 50* 30* 30* 30* 80 80 50 50 50 30 30 30 30 30 50 50 32 60

Contextual Info: : S v m Se m i : 5YM5EMI SEMICONDUCTOR BCW61B SOT -23 Plastic Encapsulate Transistors TRANSISTOR PNP FEATURES Power dissipation PCM : 0.25 Collector current Icm : W -0.2 (Tamb=25 °C) A Collector base voltage V ( b r )cbo : ~32 V Operating and storage junction temperature range

LTACQ

Abstract: LTC6910-2 LTC6910-1 LTC6910-3 LTC6910-2CTS8 sot-23 marking code 352
Contextual Info: Final Electrical Specifications LTC6910-2 Digitally Controlled Programmable Gain Amplifier in SOT-23 April 2003 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 3-Bit Digital Gain Control 0, 1, 2, 4, 8, 16, 32 and 64V/V 8-Pin TSOT-23 Package

BCW65C

Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A

34063

Abstract: 34063 application note 34063 schematic 34063 Application Notes marking 34063 INA-34063 34063 circuit table
Contextual Info: 3.0 GHz Medium Power Silicon RFIC␣ Amplifier Technical Data INA-34063 Features • +8 dBm P1 dB at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9␣ GHz • Single +3V Supply • Unconditionally Stable

ex 34063

Abstract: 34063 schematic 34063 application note
Contextual Info: W hot HEWLETT mLEM PACKARD 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features • +8 dBm Pj ¿3 at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9 GHz • Single +3V Supply

B 1403 N

Contextual Info: M lC O N D U C T O R tm MMBD1401 /1403 /1404 /1405 MARKING SOT-23 MMBD1401 M M BD 1403 29 32 M M BD 1404 M M BD 1405 33 34 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol

1403

Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
Contextual Info: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.

Contextual Info: BD329 SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r -r a d io output sta g e s. P-N -P com plem ent is BD330. M atched p a irs can be supplied. Q UICK REFERENCE D A TA C o lle c to r-e m itte r voltage VgE - 0

BD329/BD330

Abstract: BD329 BD330
Contextual Info: BD329 PHILIPS INTERNATIONAL 5fc>E D TllDôHb 004EÛ7G =170 • P H I N ■ T " 3 3 -0 7 SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r - r a d io output sta g e s. P -N -P com plem ent is BD330. M atched p a irs can be supplied.

transistor Bc 82

Abstract: B 722 P 12A3 BU902 T0126 transistor c s z 44 v
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ô'iBDO'îb O O O W ? . TnHLtMFtLDK]BS l!?a electronic BU 902 C rta tiv e Tfccbnotoot« Silicon NPN Power Transistor r - 3 3 .-13 Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time

BSS64LT1

Contextual Info: ON Semiconductort Driver Transistor BSS64LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C

BSS63LT1

Contextual Info: ON Semiconductort High Voltage Transistor BSS63LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –100 Vdc Collector–Emitter Voltage RBE = 10 kΩ VCER 3 Vdc –110 Collector Current — Continuous 1 IC –100 mAdc

BSS84LT1

Contextual Info: BSS84LT1 Preferred Device Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load

BSS138LT1

Abstract: BSS138LT3
Contextual Info: BSS138LT1 Preferred Device Power MOSFET 200 mAmps, 50 Volts N–Channel SOT–23 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

transistors BC 23

Abstract: 14 SOT-23 sot-23 ce 110 sot 23 SOT-23 BSS sot-23 npn BCW60 BCW65 BCX41 BCX55
Contextual Info: AF transistors M axim um ratings PNP = P NPN = N V Kdeo BC 817 BC 818 BC 846 BC 847 BC 848 BC 849 BC 850 N N N N N N N BC 807 BC 808 BC 856 BC 857 BC 858 BC 859 BC 860 P P P P P P P BCW60 BCW65 BCW 66 BCX41 BCX 54 BCX55 BCX 56 BCX 68 BCX 70 N N N N N N N N

BSP16T1

Abstract: SMD310
Contextual Info: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300

BC857BM3T5G

Abstract: BC487 "cross-reference" 2N3904 PNP BC237 BC449 "cross-reference" MPS5172 "cross-reference" BC856BM3T5G
Contextual Info: Small−Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General−Purpose Transistors . . . . . . . . . . . . . . . . . . 25 General−Purpose Multiple Transistors . . . . . . . . . . 30 Low Noise and Good hFE Linearity . . . . . . . . . . . . . 31

BSP16T1

Abstract: BSP19AT1 SMD310
Contextual Info: ON Semiconductort NPN Silicon Epitaxial Transistor BSP19AT1 ON Semiconductor Preferred Device This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for

SOT353 footprint

Contextual Info: NL17SZ32 Single 2−Input OR Gate The NL17SZ32 is a single 2−input OR Gate in two tiny footprint packages. The device performs much as LCX multi−gate products in speed and drive. They should be used wherever the need for higher speed and drive are needed.

7SZ32

Contextual Info: NL17SZ32 Single 2−Input OR Gate The NL17SZ32 is a single 2−input OR Gate in two tiny footprint packages. The device performs much as LCX multi−gate products in speed and drive. They should be used wherever the need for higher speed and drive are needed.

L74VHC1G32

Abstract: 74VHC1G32 MARKING CODE V4 SC-88A footprint sot23-5 transistor T1 A114 A115 C101 JESD22 L74VHC1G32DFT2
Contextual Info: LESHAN RADIO COMPANY, LTD. 2-Input OR Gate L74VHC1G32 The L74VHC1G32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Shortly TTL while maintaining CMOS low power dissipation.

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11