MJE3440 Search Results

MJE370

Abstract: MJE3439 JE3440 MJE3370 MJE3440 MJE3371 MJE371 MJE-3439
Contextual Info: MJE3370 SILICON For SpecificationS; See MJE370 Data. ^ U E 3 3 7 1 (SILICON) For Specifications, See MJE371 Data. MJE3439, MJE3440 (SILICON) 0.3 AMPERE NPN SILICO N HIG H-VO LTAG E POWER TRANSISTORS NPN SILICON POWER TRANSISTORS . . . designed for use as video o utput amplifiers in television receivers

JE3439

Abstract: SGS3439
Contextual Info: ‘ •_ Tggq1 5 3 7 QQa g i o 1 M Ml ^ SGS-THOMSON t^DO^ ILi©1T[H] â [MD(gl 3 3 -o 7 _ MJE3439-SGS3439 MJE3440-SGS3440 S G S-THOMSON 3QE » HIGH VOLTAGE TRANSISTOR DESC RIPTIO N The MJE3439, MJE3440, SQS3439 and SGS3440 are NPN silicon epitaxial planar transistors respec­

MJE3440

Contextual Info: MJE3440 SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon Epitaxial Planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications.

MJE3440

Abstract: b 108 b transistor case To 106 SGS-Thomson
Contextual Info: MJE3440 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications.

MJE3440

Contextual Info: /= T SGS-THOMSON S«fô»gC T@ [fflli S_M J E 3 4 4 0 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial

Contextual Info: MJE3440 SILICON NPN TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM

Contextual Info: ^ 7 SGS-THOMSON V # ^D g^ [iL[l TO(MD(gi MJE3439-SGS3439 MJE3440-SGS3440 HIGH VOLTAGE TRANSISTOR D E S C R IP T IO N The MJE3439, MJE3440, SGS3439 and SGS3440 are NPN silicon epitaxial planar transistors respec­ tively in TO -126 and SOT-82 plastic package. They

Contextual Info: Æ T SGS-THOMSON D ISÌ S IIL[1CTISÌ ÌD©S MJE3440 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial

MJE3440

Contextual Info: MJE3440 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications.

JE3440

Abstract: JE3439 JE34
Contextual Info: MOT O RO LA SC 12E 0 | L3t.72S4 0005353 3 | X S T R S/ R F T -3 3 -^ r MOTOROLA MJE3439 MJE3440 • SEMICONDUCTOR TECHNICAL DATA 0.3 AMPERE NPN SILICON HIGH-VOLTAGE POWER TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed fo r use in line operated equipm ent requiring high fr.

Contextual Info: IEIISU tSs-mi-Conductot Lpioaucti, L/na. £r t/ TELEPHONE: (973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 FAX: (973) 376-8960 U.SA MJE3440 SILICON NPN TRANSISTOR . NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar

Contextual Info: XTR117 SBOS344B − SEPTEMBER 2005 − REVISED JANUARY 2006 4-20mA Current-Loop Transmitter FEATURES D D D D D D DESCRIPTION LOW QUIESCENT CURRENT: 130µA 5V REGULATOR FOR EXTERNAL CIRCUITS LOW SPAN ERROR: 0.05% LOW NONLINEARITY ERROR: 0.003% WIDE-LOOP SUPPLY RANGE: 7.5V to 40V

ST-13002

Abstract: mje 340 transistor transistor d 13009 transistor mje 13003 transistor d 13007 STH11 ST13003 MJE 5740 STH16006A transistor E 13009
Contextual Info: SEMICONDUCTOR T EC H N O LO G Y , INC. SE MIC OND UC TO R TECHNOL OGY DSE D I fll3b45fl □ □ □ □ 2 3 3 5 I - 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS

MJd3340

Abstract: REF32XX SBOS344 xtr115 pressure sensors
Contextual Info: XTR117 SBOS344 − SEPTEMBER 2005 4-20mA Current-Loop Transmitter FEATURES D D D D D D DESCRIPTION LOW QUIESCENT CURRENT: 130µA 5V REGULATOR FOR EXTERNAL CIRCUITS LOW SPAN ERROR: 0.05% LOW NONLINEARITY ERROR: 0.003% WIDE-LOOP SUPPLY RANGE: 7.5V to 40V MSOP-8 PACKAGE

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

design of a 4-20mA transmitter using instruments

Abstract: zener in4148 Voltage-to-Current 4-20mA MJd3340
Contextual Info: XTR117 SBOS344 − SEPTEMBER 2005 4-20mA Current-Loop Transmitter FEATURES D D D D D D DESCRIPTION LOW QUIESCENT CURRENT: 130µA 5V REGULATOR FOR EXTERNAL CIRCUITS LOW SPAN ERROR: 0.05% LOW NONLINEARITY ERROR: 0.003% WIDE-LOOP SUPPLY RANGE: 7.5V to 40V MSOP-8 PACKAGE

MJD3340

Abstract: voltage to 4-20mA 24v loop converter
Contextual Info: XTR117 SBOS344 − SEPTEMBER 2005 4-20mA Current-Loop Transmitter FEATURES D D D D D D DESCRIPTION LOW QUIESCENT CURRENT: 130µA 5V REGULATOR FOR EXTERNAL CIRCUITS LOW SPAN ERROR: 0.05% LOW NONLINEARITY ERROR: 0.003% WIDE-LOOP SUPPLY RANGE: 7.5V to 40V MSOP-8 PACKAGE

4-20ma ADC INPUT

Contextual Info: XTR117 SBOS344B − SEPTEMBER 2005 − REVISED JANUARY 2006 4-20mA Current-Loop Transmitter FEATURES D D D D D D DESCRIPTION LOW QUIESCENT CURRENT: 130µA 5V REGULATOR FOR EXTERNAL CIRCUITS LOW SPAN ERROR: 0.05% LOW NONLINEARITY ERROR: 0.003% WIDE-LOOP SUPPLY RANGE: 7.5V to 40V

MJE13005A

Abstract: MJ4361 MJ3237 MJE10001 MJ2901 MJ9000 MJ430 MJE240 MJE4923 MJ2252
Contextual Info: STI Type: MJ13330 Notes: Polarity: NPN Power Dissipation: 175 VCEV: 400 VCEO: 200 ICEV: 400 ICEV A: .25 hFE: 8.0 hFE A: 15 VCE: 1.5 VBE: 1.8 IC: 10 COB: 400 fT: 5.0 Case Style: TO-204AA/TO-3: Industry Type: MJ13330 STI Type: MJ13101 Notes: Polarity: NPN Power Dissipation: 175

MJE3440

Abstract: REF3125 REF3130 REF3140 TIP29C TIP41C XTR115 XTR116 XTR117 design of a 4-20mA transmitter for a bridge type
Contextual Info: XTR117 SBOS344B − SEPTEMBER 2005 − REVISED JANUARY 2006 4-20mA Current-Loop Transmitter FEATURES D D D D D D DESCRIPTION LOW QUIESCENT CURRENT: 130µA 5V REGULATOR FOR EXTERNAL CIRCUITS LOW SPAN ERROR: 0.05% LOW NONLINEARITY ERROR: 0.003% WIDE-LOOP SUPPLY RANGE: 7.5V to 40V

2N3055 plastic

Abstract: BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art

transistor rc 3866

Abstract: t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state–of–the–art SWITCHMODE bipolar power transistor. It

BU108

Abstract: BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •

D45H11 equivalent replacement

Abstract: transistor equivalent book 2SC2073 BDX36 equivalent bd139 equivalent transistor BUT11Af equivalent BU108 334 bdw93c f P6042 2SA818 equivalent transistor mj11028 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16002* MJE16004*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device These transistors are designed for high–voltage, high–speed switching of inductive circuits where fall time and RBSOA are critical. They are particularly well–suited for