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    SOT-23 MARKING BF Search Results

    SOT-23 MARKING BF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG80C186-10/BZA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy
    54121/BCA
    Rochester Electronics LLC 54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) PDF Buy
    54F191/QEA
    Rochester Electronics LLC 54F191/QEA - Dual marked (5962-9058201EA) PDF Buy

    SOT-23 MARKING BF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SIEMENS BF 599 NPN Silicon RF Transistor • Common emitter IF/RF amplifier • Low feedback capacitance due to shield diffusion Type Marking Ordering Code tape and reel BF 599 NB Q62702-F979 Pin Configuration 2 1 3 E B Package1) SOT-23 C Maximum Ratings


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    Q62702-F979 OT-23 EHT07072 PDF

    K 2545 transistor

    Abstract: 41 BF transistor transistor bf 422 transistor BF 606 BF 830 transistor transistor marking code 41 BF transistors bf 423 BF423S Transistor marking code K transistor BF 423
    Contextual Info: TELEFUNKEN ELECTRONIC 17E D • 6 ^ 2 0 0 % 000^407 BF 421S BF 423 S ■¡nmiFWOKIKl electronic CfMtwT«cfwwtoe*e$ Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 421 S complementary to BF 420 S


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    BF421S BF420S BF423S 150K/W T0126 15A3DIN K 2545 transistor 41 BF transistor transistor bf 422 transistor BF 606 BF 830 transistor transistor marking code 41 BF transistors bf 423 BF423S Transistor marking code K transistor BF 423 PDF

    Contextual Info: MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique


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    MMBT2222L, MMBT2222AL, SMMBT2222AL MMBT2222L PDF

    M6H MARKING sot23

    Abstract: DIODE M5G MMBD355LT1G NSVMMBD353LT1G SOT23 marking m5g Code sot-23 on semiconductor NSVMMBD353 marking M6H SOT-23 m4f e
    Contextual Info: MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G http://onsemi.com Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching


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    MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G OT-23 O-236) MMBD352LT1G MMBD352LT1/D M6H MARKING sot23 DIODE M5G NSVMMBD353LT1G SOT23 marking m5g Code sot-23 on semiconductor NSVMMBD353 marking M6H SOT-23 m4f e PDF

    TRANSISTOR D 2627

    Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546
    Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage


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    r-33-13 T0126 15A3DIN TRANSISTOR D 2627 transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546 PDF

    silicon npn planar rf transistor sot 143

    Abstract: transistor AC 237 BFS 65 BFS62 F-05 Telefunken u 237 sot-23 TRANSISTOR MARKING 76 c10 g sot-23 sot-23 MARKING CODE GS 5 bc238c
    Contextual Info: TELEFUNKEN ELECTRONIC m i [ F y » i K l electronic 81C » • S^SDDSb 0005314 M m A L G G 7 > S /~ /S " p e e RO B p5 bZ Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General up to the VHF range Features: • Small feedback capacitance


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    DDD53m HAL66 BFS62 500WW ft-11 569-GS 000s154 if-11 silicon npn planar rf transistor sot 143 transistor AC 237 BFS 65 BFS62 F-05 Telefunken u 237 sot-23 TRANSISTOR MARKING 76 c10 g sot-23 sot-23 MARKING CODE GS 5 bc238c PDF

    Contextual Info: MUN2116, MMUN2116L, MUN5116, DTA143TE, DTA143TM3 Digital Transistors BRT R1 = 4.7 kW, R2 = 8 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


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    MUN2116, MMUN2116L, MUN5116, DTA143TE, DTA143TM3 DTA143T/D PDF

    MMBZ5221ELT1

    Contextual Info: MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well


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    MMBZ52xxELT1G SZMMBZ52xxELT1G OT-23 AEC-Q101 MMBZ5221ELT1/D MMBZ5221ELT1 PDF

    Contextual Info: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


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    MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 DTA144E/D PDF

    Contextual Info: MMBT2907AL, SMMBT2907AL General Purpose Transistors PNP Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • COLLECTOR 3 Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique


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    MMBT2907AL, SMMBT2907AL MMBT2907ALT1/D PDF

    BFR183T

    Abstract: BFR183TW
    Contextual Info: BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure


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    BFR183T/BFR183TW BFR183T BFR183TW D-74025 20-Jan-99 PDF

    BFR182T

    Abstract: BFR182TW
    Contextual Info: BFR182T/BFR182TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure


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    BFR182T/BFR182TW BFR182T BFR182TW D-74025 20-Jan-99 PDF

    Contextual Info: MUN2115, MMUN2115L, MUN5115, DTA114TE, DTA114TM3, NSBA114TF3 Digital Transistors BRT R1 = 10 kW, R2 = 8 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


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    MUN2115, MMUN2115L, MUN5115, DTA114TE, DTA114TM3, NSBA114TF3 DTA114T/D PDF

    transistor BFT 95

    Abstract: transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor
    Contextual Info: TELEFUNKEN ELECTRONIC SIC D ▼ • 812001b 000531!, 8 «ALG S T~3/-'~ m iBraaBSIEI» electronic BPr qB B FT 95 i Creative Technologies Silicon PNP Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier !


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    000531b ft-11 569-GS 000s154 hal66 if-11 transistor BFT 95 transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor PDF

    BAV70LT1G

    Abstract: SBAV70LT3 SBAV70LT1G
    Contextual Info: BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G Dual Switching Diode Common Cathode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements


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    BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G AEC-Q101 OT-23 O-236) BAV70LT1/D BAV70LT1G SBAV70LT3 SBAV70LT1G PDF

    BFQ67W

    Abstract: 15.931 BFQ67 BFQ67R transistor marking WV2
    Contextual Info: BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.


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    BFQ67/BFQ67R/BFQ67W BFQ67 BFQ67R BFQ67W D-74025 20-Jan-99 15.931 transistor marking WV2 PDF

    transistor marking 3em

    Abstract: MMBTH10LT1
    Contextual Info: MOTOROLA Order this document by MMBTH10LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit


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    MMBTH10LT1/D MMBTH10LT1 OT-23 O-236AB) DiodesMMBTH10LT1/D transistor marking 3em MMBTH10LT1 PDF

    NS sot-23

    Abstract: NSVBAT54
    Contextual Info: BAT54LT1G, NSVBAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where


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    BAT54LT1G, NSVBAT54LT1G 125Cplicable BAT54LT1/D NS sot-23 NSVBAT54 PDF

    SMMBT5401LT1G

    Abstract: MMBT5401LT1G
    Contextual Info: MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236


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    MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G AEC-Q101 OT-23 O-236) MMBT5401LT1/D SMMBT5401LT1G MMBT5401LT1G PDF

    NSVMMBT589

    Abstract: MARKING G3 Transistor
    Contextual Info: MMBT589LT1G, NSVMMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications Features http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring


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    MMBT589LT1G, NSVMMBT589LT1G AEC-Q101 OT-23 O-236) MMBT589LT1/D NSVMMBT589 MARKING G3 Transistor PDF

    NSV40201LT1G

    Abstract: NSV40201 NSS40201LT1G
    Contextual Info: NSS40201LT1G, NSV40201LT1G 40 V, 4.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS40201LT1G, NSV40201LT1G NSS40201L/D NSV40201 NSS40201LT1G PDF

    MMBF4416LT1

    Abstract: MMBF4416LT1G FR 220
    Contextual Info: MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage


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    MMBF4416LT1 OT-23 O-236) MMBF4416LT1/D MMBF4416LT1 MMBF4416LT1G FR 220 PDF

    BC847CDW1T1G

    Abstract: SBC847CDW1T1G SBC846BDW1T1G
    Contextual Info: BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, BC848CDW1T1G Dual General Purpose Transistors http://onsemi.com NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is


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    BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G BC848CDW1T1G OT-363/SC-88 OT-363 AEC-Q101 BC846BDW1T1/D BC847CDW1T1G SBC847CDW1T1G SBC846BDW1T1G PDF

    Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents SN65DSI86-Q1 SLLSEJ5 – JULY 2014 SN65DSI86-Q1 MIPI DSI to eDP Bridge 1 Features 2 Applications • • • • 1 • • • • • • • • • • • • • Embedded DisplayPort eDP 1.4 Compliant


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    SN65DSI86-Q1 SN65DSI86-Q1 62Gbps 16Gbps, 43Gbps, 24Gbps, 32Gbps, PDF