SMD TRANSISTOR REC MARKING Search Results

057N06N

Abstract: 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358
Contextual Info: Type IPB054N06N3 G IPP057N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 5.4 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

052N06L

Abstract: IEC61249-2-21 IPP052N06L3 JESD22 PG-TO220-3 gs 05 24 gd 2
Contextual Info: Type IPB049N06L3 G IPP052N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 4.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

084N06L

Abstract: IPP084N06L3G IEC61249-2-21 JESD22 PG-TO220-3 081N06L
Contextual Info: Type IPB081N06L3 G IPP084N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)

024N06N

Abstract: 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G
Contextual Info: Type IPB021N06N3 G IPI024N06N3 G IPP024N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)

100n08n

Abstract: IPB097N08N3 IEC61249-2-21 PG-TO220-3
Contextual Info: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 9.7 mΩ ID 70 A • Excellent gate charge x R DS(on) product (FOM)

067N08N

Abstract: 070N08N smd marking D36 PG-TO220-3 IEC61249-2-21
Contextual Info: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 6.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

032N06n

Abstract: 029N06N IPI032N06N3 G IEC61249-2-21 IPP032N06N3 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06
Contextual Info: Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 2.9 mΩ • Optimized technology for DC/DC converters ID 120 A • Excellent gate charge x R DS(on) product (FOM)

037N06L

Abstract: 034N06L IPI037N06L3 IEC61249-2-21 PG-TO-220-3 IPP037N06L3 G
Contextual Info: Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 3.4 mΩ • Optimized technology for DC/DC converters ID 90 A • Excellent gate charge x R DS(on) product (FOM)

transistor SMD MARKING CODE HF

Abstract: smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor
Contextual Info: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions • Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A

HFA06TB120S

Abstract: IRFP250
Contextual Info: HFA06TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 6 A FEATURES • • • • • • • Base cathode + 2 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

transistor SMD MARKING CODE HF

Abstract: HFA06TB120S IRFP250 smd code HF transistor
Contextual Info: HFA06TB120S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 6 A FEATURES • • • • • • Base cathode + 2 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

smd TRANSISTOR code marking 2F

Abstract: TRANSISTOR SMD 2x t SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE 2x N TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE DM HFA15TB60S IRFP250
Contextual Info: PD -20615 01/99 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits K VR = 600V BASE + 2 V F = 1.7V

smd transistor REC marking

Abstract: transistor smd marking hf TB60S HFA04TB60S IRFP250 transistor smd marking HF vishay SMD REC MARKING 94036
Contextual Info: HFA04TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 4 A FEATURES • • • • • • • Base common cathode + 2 Available RoHS* COMPLIANT BENEFITS • • • • • 3 - Anode 1 Anode - Ultrafast recovery Ultrasoft recovery

TRANSISTOR SMD MARKING CODE DM

Abstract: 600v 10A ultra fast recovery diode TRANSISTOR SMD 2x t TRANSISTOR SMD MARKING CODE 2x I 600V 25A Ultrafast Diode TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 42 HFA25TB60S IRFP250 SMD TRANSISTOR MARKING 9bb
Contextual Info: PD -20616 01/99 HFA25TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: HFA04TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 4 A FEATURES • • • • • • • Base common cathode + 2 Available RoHS* COMPLIANT BENEFITS • • • • • 3 - Anode 1 Anode - Ultrafast recovery Ultrasoft recovery

Contextual Info: HFA06TB120S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 6 A FEATURES • • • • • • Base cathode + 2 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

transistor 20607

Abstract: smd TRANSISTOR code marking 2F TRANSISTOR SMD MARKING CODE 2x 20607 SMD TRANSISTOR MARKING 9bb PD-20607 TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD 2x t HFA08TB6 TRANSISTOR SMD 2X K
Contextual Info: Preliminary Data Sheet PD -20607 rev. A 01/99 HFA08TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits

TRANSISTOR SMD MARKING CODE 2x

Abstract: smd TRANSISTOR code marking 2F TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD 2x t TRANSISTOR SMD MARKING CODE 42 HFA04TB60S IRFP250 transistor SMD code 10-t
Contextual Info: PD -20614 01/99 HFA04TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.8V Qrr * = 40nC (N/C) Benefits

Contextual Info: HFA04TB60S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 4 A FEATURES • • • • • • Base common cathode + 2 1 Anode - Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

Contextual Info: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions • Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A

smd TRANSISTOR code marking 2F

Abstract: smd dt2 SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE kh 20602 HFA06TB120S IRFP250 SMD-220 transistor smd code marking 420
Contextual Info: Bulletin PD -20602 rev. C 12/00 HFA06TB120S. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions K VR = 1200V BASE + 2 VF(typ.)* = 2.4V

HFA06TB120S

Abstract: IRFP250 SMD 6_A smd transistor REC
Contextual Info: HFA06TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 6 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Compliant to RoHS directive 2002/95/EC

smd transistor REC marking

Abstract: smd marking dt2 HFA04TB60S IRFP250 vishay smd diode code marking marking dt2 transistor smd marking HF vishay SMD REC MARKING
Contextual Info: HFA04TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 4 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating temperature Compliant to RoHS directive 2002/95/EC

smd TRANSISTOR code marking 2F

Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838
Contextual Info: Preliminary Data Sheet PD-20605 rev. A 01/99 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits