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    021N06N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB021N06N3G

    Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPB021N06N3G 19 1
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    • 1000 $1.26
    • 10000 $1.18
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    Infineon Technologies AG IPB021N06N3GATMA1

    Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPB021N06N3GATMA1 7,961
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    021N06N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    024N06N

    Abstract: 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G
    Contextual Info: Type 021N06N3 G IPI024N06N3 G IPP024N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipb021n06n3ipi024n06n3ipp024n06n3iec61249-2-21+6pg-to263-3pg-to262-3pg-to220-3024n06n021n06nipi024n06n3 g PDF

    024N06N

    Abstract: 021N06N JESD22 PG-TO220-3 IPP024N06N3 G 024N06 IPI024N06N3 G
    Contextual Info: 021N06N3 G Type IPI024N06N3 G IPP024N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipb021n06n3ipi024n06n3ipp024n06n3pg-to263-3+8pg-to262-3pg-to220-3021n06n024n06njesd22ipp024n06n3 g024n06ipi024n06n3 g PDF