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    024N06 Search Results

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    onsemi NVTFS024N06CTAG

    Power MOSFET Single N-Channel µ8FL
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    Master Electronics NVTFS024N06CTAG
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    Avnet Americas NVTFS024N06CTAG Tape & Reel 67 Weeks 1,500
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    Mouser Electronics NVTFS024N06CTAG 1,497
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    Newark NVTFS024N06CTAG Bulk 1,500
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    Rochester Electronics NVTFS024N06CTAG 150,000 1
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    TME NVTFS024N06CTAG 1
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    Avnet Silica NVTFS024N06CTAG 53 Weeks 1,500
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    EBV Elektronik NVTFS024N06CTAG 53 Weeks 1,500
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    onsemi NVMFWD024N06CT1G

    Power MOSFET, N-Channel, DUAL SO8FL, 60 V, 22.6 mO, 24 A - Tape and Reel (Alt: NVMFWD024N06CT1G)
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    Avnet Americas NVMFWD024N06CT1G Tape & Reel 68 Weeks 1,500
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    Mouser Electronics NVMFWD024N06CT1G 1,500
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    Newark NVMFWD024N06CT1G Bulk 1,500
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    Rochester Electronics NVMFWD024N06CT1G 2,990 1
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    TME NVMFWD024N06CT1G 1
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    EBV Elektronik NVMFWD024N06CT1G 53 Weeks 1,500
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    Flip Electronics NVMFWD024N06CT1G 6,000
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    onsemi NVMFD024N06CT1G

    Power MOSFET, N-Channel, DUAL SO8FL, 60 V, 22.6 mO, 24 A - Tape and Reel (Alt: NVMFD024N06CT1G)
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    Avnet Americas NVMFD024N06CT1G Tape & Reel 68 Weeks 1,500
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    Mouser Electronics NVMFD024N06CT1G 25,404
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    Newark NVMFD024N06CT1G Bulk 1,500
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    Rochester Electronics NVMFD024N06CT1G 1,010 1
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    TME NVMFD024N06CT1G 1
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    Avnet Silica NVMFD024N06CT1G 53 Weeks 1,500
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    EBV Elektronik NVMFD024N06CT1G 53 Weeks 1,500
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    Flip Electronics NVMFD024N06CT1G 4,500
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    onsemi NVMFWS024N06CT1G

    MOSFET  Power, Single, N-Channel DFN5(Pb-Free, Wettable Flanks) - Tape and Reel (Alt: NVMFWS024N06CT1G)
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    Avnet Americas NVMFWS024N06CT1G Tape & Reel 67 Weeks 1,500
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    Mouser Electronics NVMFWS024N06CT1G
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    Infineon Technologies AG ISZ024N06NM6ATMA1

    - Tape and Reel (Alt: ISZ024N06NM6ATMA1)
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    Avnet Americas ISZ024N06NM6ATMA1 Tape & Reel 5,000
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    024N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    024N06

    Abstract: ipd024n
    Contextual Info: Type 024N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification VDS 60 V • 100% avalanche tested RDS on ,max 2.4 mW • Superior thermal resistance ID 90 A • N-channel, normal level 1) • Qualified according to JEDEC for target applications


    Original
    ipd024n06niec61249-2-21o-252-3024n06n+350k/w024n06ipd024n PDF

    024N06N

    Abstract: 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G
    Contextual Info: Type IPB021N06N3 G 024N06N3 G 024N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    ipb021n06n3ipi024n06n3ipp024n06n3iec61249-2-21+6pg-to263-3pg-to262-3pg-to220-3024n06n021n06nipi024n06n3 g PDF

    024N06N

    Abstract: 021N06N JESD22 PG-TO220-3 IPP024N06N3 G 024N06 IPI024N06N3 G
    Contextual Info: IPB021N06N3 G Type 024N06N3 G 024N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    ipb021n06n3ipi024n06n3ipp024n06n3pg-to263-3+8pg-to262-3pg-to220-3021n06n024n06njesd22ipp024n06n3 g024n06ipi024n06n3 g PDF