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024N06 Abstract: ipd024n Contextual Info: Type IPD024N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification VDS 60 V • 100% avalanche tested RDS on ,max 2.4 mW • Superior thermal resistance ID 90 A • N-channel, normal level 1) • Qualified according to JEDEC for target applications	Original	IPD024N06N IEC61249-2-21 O-252-3 024N06N 50K/W 024N06 ipd024n	PDF

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024N06

Abstract: ipd024n
Contextual Info: Type IPD024N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification VDS 60 V • 100% avalanche tested RDS on ,max 2.4 mW • Superior thermal resistance ID 90 A • N-channel, normal level 1) • Qualified according to JEDEC for target applications

Original

IPD024N06N IEC61249-2-21 O-252-3 024N06N 50K/W 024N06 ipd024n

PDF