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    032N06 Search Results

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    onsemi NTHL032N065M3S

    SIC MOS TO247-3L 32MOHM 650V M3S
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    Newark NTHL032N065M3S Bulk 100 1
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    onsemi NVH4L032N065M3S

    SIC MOS TO247-4L 32MOHM 650V M3S
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    Newark NVH4L032N065M3S Bulk 383 1
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    Infineon Technologies AG IPP032N06N3GXKSA1

    Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP032N06N3GXKSA1)
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    Avnet Americas IPP032N06N3GXKSA1 Tube 39 Weeks 1,000
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    Rochester Electronics IPP032N06N3GXKSA1 2,685 1
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    TME IPP032N06N3GXKSA1 1 1
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    Ameya Holding Limited IPP032N06N3GXKSA1 500
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    EBV Elektronik IPP032N06N3GXKSA1 22 Weeks 500
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    Vyrian IPP032N06N3GXKSA1 7,101
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    Infineon Technologies AG IPA032N06N3GXKSA1

    - Rail/Tube (Alt: IPA032N06N3GXKSA1)
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    Rochester Electronics IPA032N06N3GXKSA1 97 1
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    TME IPA032N06N3GXKSA1 45 1
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    Rutronik IPA032N06N3GXKSA1 Tube 350 50
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    EBV Elektronik IPA032N06N3GXKSA1 12 Weeks 500
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    onsemi NTBL032N065M3S

    Silicon Carbide (SiC) MOSFET  EliteSiC, 32 mohm, 650 V, M3S, TOLL Silicon Carbide (SiC) MOSFET  EliteSiC, 32 mohm, 650 V, M3S, TOLL - Tape and Reel (Alt: NTBL032N065M3S)
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    Avnet Americas NTBL032N065M3S Tape & Reel 2,000
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    Avnet Asia NTBL032N065M3S 78 Weeks 2,000
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    Avnet Silica NTBL032N065M3S 53 Weeks 2,000
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    EBV Elektronik NTBL032N065M3S 53 Weeks 2,000
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    032N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    032N06n

    Contextual Info: 032N06N3 G Type OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 60 V RDS on ,max 3.2 mW ID 84 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    ipa032n06n3iec61249-2-21pg-to220-3-31032n06n PDF

    032N06n

    Abstract: 029N06N IPI032N06N3 G IEC61249-2-21 IPP032N06N3 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06
    Contextual Info: Type IPB029N06N3 G 032N06N3 G 032N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 2.9 mΩ • Optimized technology for DC/DC converters ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    ipb029n06n3ipi032n06n3ipp032n06n3iec61249-2-21+9pg-to263-3pg-to262-3pg-to220-3032n06n029n06nipi032n06n3 gipb029n06n3 gipp032n06n3g032n06 PDF

    032N06n

    Abstract: 029N06N 032N06 032N0 IPP032N06N3 IPI032N06N3 G JESD22 PG-TO220-3
    Contextual Info: IPB029N06N3 G Type 032N06N3 G 032N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.9 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    ipb029n06n3ipi032n06n3ipp032n06n3pg-to263-3+8pg-to262-3pg-to220-3029n06n032n06n032n06032n0ipi032n06n3 gjesd22 PDF

    032N06n

    Abstract: IPA032N06N3 032N06 IPA032N06N3G JESD22 PG-TO220-3-31 ipa032n
    Contextual Info: 032N06N3 G Type OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 3.2 mΩ ID 84 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    ipa032n06n3pg-to220-3-31032n06n032n06+3ipa032n06n3gjesd22ipa032n PDF