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    032N0 Search Results

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    onsemi FDA032N08

    N-Channel PowerTrench? MOSFET 75V, 235A, 3.2mO - Rail/Tube (Alt: FDA032N08)
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    Avnet Americas FDA032N08 Tube 900
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    Rochester Electronics FDA032N08 159,362 1
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    TME FDA032N08 21 1
    • 1 $4.54
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    • 100 $3.21
    • 1000 $3.08
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    Avnet Silica FDA032N08 28 Weeks 30
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    Flip Electronics FDA032N08 691,650
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    onsemi NVH4L032N065M3S

    Silicon Carbide (SiC) MOSFET  EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L - Rail/Tube (Alt: NVH4L032N065M3S)
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    Avnet Americas NVH4L032N065M3S Tube 49 Weeks 450
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    Newark NVH4L032N065M3S Bulk 383 1
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    Avnet Silica NVH4L032N065M3S 50 Weeks 30
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    Master Electronics NVH4L032N065M3S
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    onsemi FDP032N08B-F102

    N-Channel PowerTrench? MOSFET 80V, 211A, 3.3mO - Rail/Tube (Alt: FDP032N08B-F102)
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    Avnet Americas FDP032N08B-F102 Tube 41 Weeks 800
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    Rochester Electronics FDP032N08B-F102 566 1
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    TME FDP032N08B-F102 1
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    Master Electronics FDP032N08B-F102
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    Infineon Technologies AG IPA032N06N3GXKSA1

    - Rail/Tube (Alt: IPA032N06N3GXKSA1)
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    Avnet Americas IPA032N06N3GXKSA1 Tube 500
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    Rochester Electronics IPA032N06N3GXKSA1 97 1
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    Rutronik IPA032N06N3GXKSA1 Tube 350 50
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    EBV Elektronik IPA032N06N3GXKSA1 12 Weeks 500
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    Vyrian IPA032N06N3GXKSA1 10,041
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    Pulse Electronics Corporation BSCQ000603032N0BHR

    - Tape and Reel (Alt: BSCQ000603032N0BHR)
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    Avnet Americas BSCQ000603032N0BHR Tape & Reel 22 Weeks 120,000
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    Newark BSCQ000603032N0BHR Tape & Reel 90,000
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    032N0 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 032N04LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance SMPS, e.g. sync. rec. • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested • Superior thermal resistance VDS 40 V RDS(on),max 3.2 mW ID 98


    Original
    bsc032n04lsiec61249-2-21032n04ls PDF

    032N06n

    Contextual Info: 032N06N3 G Type OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 60 V RDS on ,max 3.2 mW ID 84 A • Excellent gate charge x R DS(on) product (FOM)


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    ipa032n06n3iec61249-2-21pg-to220-3-31032n06n PDF

    032N06n

    Abstract: 029N06N IPI032N06N3 G IEC61249-2-21 IPP032N06N3 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06
    Contextual Info: Type IPB029N06N3 G 032N06N3 G 032N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 2.9 mΩ • Optimized technology for DC/DC converters ID 120 A • Excellent gate charge x R DS(on) product (FOM)


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    ipb029n06n3ipi032n06n3ipp032n06n3iec61249-2-21+9pg-to263-3pg-to262-3pg-to220-3032n06n029n06nipi032n06n3 gipb029n06n3 gipp032n06n3g032n06 PDF

    032N06n

    Abstract: 029N06N 032N06 032N0 IPP032N06N3 IPI032N06N3 G JESD22 PG-TO220-3
    Contextual Info: IPB029N06N3 G Type 032N06N3 G 032N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.9 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


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    ipb029n06n3ipi032n06n3ipp032n06n3pg-to263-3+8pg-to262-3pg-to220-3029n06n032n06n032n06032n0ipi032n06n3 gjesd22 PDF

    032n0

    Abstract: BSC032N03S
    Contextual Info: 032N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 50 A • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM)


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    bsc032n03sq67042-s4219032n03s032n0 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


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    b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


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    b192-h6780-g9-x-7600d-81669vdsl5100i-evdsl6100i-e+10bcm 43362a0565c23352a280zc1740 bipolar transistortransistor a1267a1273 transistorc2335 r2b05652b265 PDF

    032N06n

    Abstract: IPA032N06N3 032N06 IPA032N06N3G JESD22 PG-TO220-3-31 ipa032n
    Contextual Info: 032N06N3 G Type OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 3.2 mΩ ID 84 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    ipa032n06n3pg-to220-3-31032n06n032n06+3ipa032n06n3gjesd22ipa032n PDF