SMD REC MARKING Search Results

057N06N

Abstract: 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358
Contextual Info: Type IPB054N06N3 G IPP057N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 5.4 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

052N06L

Abstract: IEC61249-2-21 IPP052N06L3 JESD22 PG-TO220-3 gs 05 24 gd 2
Contextual Info: Type IPB049N06L3 G IPP052N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 4.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

084N06L

Abstract: IPP084N06L3G IEC61249-2-21 JESD22 PG-TO220-3 081N06L
Contextual Info: Type IPB081N06L3 G IPP084N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)

084N06L

Abstract: 081N06L
Contextual Info: Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 60 V RDS on ,max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)

084N06L

Abstract: smd marking D50 081N06L JESD22 PG-TO220-3 ipp084n06 marking D50 IPB081N06L3 IPP084 D50A5
Contextual Info: IPB081N06L3 G IPP084N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)

067N08N

Abstract: 070N08N SMD MARKING d36 JESD22 PG-TO220-3 DD40
Contextual Info: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max (SMD) 6.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

057N06N

Abstract: 054N06N JESD22 PG-TO220-3
Contextual Info: IPB054N06N3 G IPP057N06N3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 5.4 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

084N06L

Abstract: 081N06L
Contextual Info: IPB081N06L3 G IPP084N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)

Contextual Info: IPB049N06L3 G IPP052N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 4.9 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

024N06N

Abstract: 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G
Contextual Info: Type IPB021N06N3 G IPI024N06N3 G IPP024N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)

052N06L

Abstract: IPP052N06L3 JESD22 PG-TO220-3 58ua
Contextual Info: IPB049N06L3 G IPP052N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 4.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

100n08n

Abstract: IPB097N08N3 IEC61249-2-21 PG-TO220-3
Contextual Info: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 9.7 mΩ ID 70 A • Excellent gate charge x R DS(on) product (FOM)

067N08N

Abstract: 070N08N smd marking D36 PG-TO220-3 IEC61249-2-21
Contextual Info: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 6.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

032N06n

Abstract: 029N06N IPI032N06N3 G IEC61249-2-21 IPP032N06N3 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06
Contextual Info: Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 2.9 mΩ • Optimized technology for DC/DC converters ID 120 A • Excellent gate charge x R DS(on) product (FOM)

037N06L

Abstract: 034N06L IPI037N06L3 IEC61249-2-21 PG-TO-220-3 IPP037N06L3 G
Contextual Info: Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 3.4 mΩ • Optimized technology for DC/DC converters ID 90 A • Excellent gate charge x R DS(on) product (FOM)

024N06N

Abstract: 021N06N JESD22 PG-TO220-3 IPP024N06N3 G 024N06 IPI024N06N3 G
Contextual Info: IPB021N06N3 G Type IPI024N06N3 G IPP024N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)

037N06L

Abstract: 034N06L IPI037N06L3 034N06 13000 transistor TO-220 me 13000 transistor TO-220 JESD22 PG-TO-220-3
Contextual Info: IPB034N06L3 G Type IPI037N06L3 G IPP037N06L3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 3.4 mΩ ID 90 A • Excellent gate charge x R DS(on) product (FOM)

032N06n

Abstract: 029N06N 032N06 032N0 IPP032N06N3 IPI032N06N3 G JESD22 PG-TO220-3
Contextual Info: IPB029N06N3 G Type IPI032N06N3 G IPP032N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.9 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)

SMD marking CHK

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG C COPYRIGHT 2004 RELEASED FOR PUBLICATION FREI FUER VEROEFFENTLICHUNG ALL RIGHTS RESERVED. ALLE RECHTE VORBEHALTEN. - DEC 6 2004- 5 4 3 2 LOC MATED WITH: PASSEND ZU: REVISIONS DIST

SMD REC MARKING

Abstract: smd marking GI 20
Contextual Info: R E L E A S E D F OR P U B L I C A T I O N FREI FUER VERÖFFENTL IC HUNG RESERVED. T Y C O E L E C T R O N I C S C O R P O R A T I O N . AIA LI LF RRFTI GHHTFT SVTIRRFHAI TFN. 2004 DEL ^ATED W I T H : FASSEND ZU: LOC REV I S I O N S D I ST A P PROJEKT NR.:

amp TYCO sub-d

Abstract: SUB-D 9 pol sub-d Buchsenstecker subd
Contextual Info: R E L E A S E D F OR P U B L I C A T I O N FREI FUER VERÖFFENTL IC HUNG RESERVED. T Y C O E L E C T R O N I C S C O R P O R A T I O N . AIA LI LF RRFTI GHHTFT SVTIRRFHAI TFN. DEL 2004 ^ATED W I T H : FASSEND ZU: LOC REV IS I O N S D I ST A P PROJEKT NR.:

smd diode marking a6

Abstract: SMD DIODE DEVICE marking R LBAS16HT1G SMD y14 LBAS16HT1 SMD DIODE A6 t DIODE smd marking uh
Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode LBAS16HT1 FEATURE ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. 1 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION

st smt ic marking code

Abstract: 1740194-2
Contextual Info: RELEASED FOR PUBLICATION 2004 DEL FREI TYCO ELECTRONICS FUER V E R Ö F F E N T L I C H U N G AL L RIGHTS RESERVED. CORPORATION. AI I F RFTHTF ^ATED WI TH: F A S S E N D ZU: LOC RE V I S I O N S D I ST AENDERUNGEN A VTIRRFHAI T F N . P EGGMN03028 A N S IC H T ZE IG T 15 POL. STECKER

smd sot23 marking A3

Abstract: smd diode marking A3 sot23 DIODE smd marking A3 smd transistor marking A3 sot-23 packing a3 CMBD2835 CMBD2836
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 3 SOT-23 Formed SMD Package Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2