SIEMENS N3 RELAY Search Results
SIEMENS N3 RELAY Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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UHD507R/B |
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UHD507 - Quad NAND Power/Relay Driver |
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UHD432R/B |
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UHD432 - Quad 2-Input NOR Power/Relay Driver |
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UHD503R/883 |
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UHD503 - Quad OR Power/Relay Driver - Dual marked (5962-8855101CA) |
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UHD508R/883C |
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UHD508 - Quad 2-Input NAND Power/Relay Driver. Dual marked (8550001CA) |
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UHD432/883 |
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UHD432 - Quad 2-Input NOR Power/Relay Driver, CDIP14 - Dual marked (5962-8960401CA) |
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SIEMENS N3 RELAY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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4AP21
Abstract: a/3RV10
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Original |
T50/B) T55/H) 2-8HA20-2XA0 4AU30 4AU36 4AU39 4AP21 a/3RV10 | |
Contextual Info: TP0606 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TP0606 TP0606 DSFP-TP0606 A113007 | |
Contextual Info: TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
Original |
TN0110 TN0110 DSFP-TN0110 A102907 | |
P-Channel FET 100v to92Contextual Info: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
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TP2635 263pF TP2635 DSFP-TP2635 A102607 P-Channel FET 100v to92 | |
TN0606
Abstract: marking TN
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Original |
TN0606 100pF TN0606 DSFP-TN0606 A020508 marking TN | |
Contextual Info: TN0610 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TN0610 100pF TN0610 DSFP-TN0610 A020508 | |
VN2224Contextual Info: VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2224 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
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VN2224 VN2224 DSPD-3TO92N3, D061608. DSFP-VN2224 A070108 | |
Contextual Info: VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2224 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
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VN2224 VN2224 DSPD-3TO92N3, D061608. DSFP-VN2224 A061608 | |
Contextual Info: TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TN0620 110pF -55OC TN0620 DSFP-TN0620 A102907 | |
Contextual Info: VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2224 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
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VN2224 VN2224 DSFP-VN2224 A120307 | |
1W SOT-23
Abstract: TN2106K1-G
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Original |
TN2106 O-236, TN2106 DSFP-TN2106 A020508 1W SOT-23 TN2106K1-G | |
DN2535
Abstract: DN2535N3-G DN2535N5 DN2535N5-G 125OC H1 SOT-89
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DN2535 DN2535 O-220, DSFP-DN2535 A100907 DN2535N3-G DN2535N5 DN2535N5-G 125OC H1 SOT-89 | |
TRANSISTOR MARKING CODE TPContextual Info: TP2104 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
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TP2104 fr12mm O-236, TP2104 DSFP-TP2104 A112807 TRANSISTOR MARKING CODE TP | |
siemens to92 n3 sContextual Info: TN0610 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TN0610 100pF TN0610 DSPD-3TO92N3, D070808. DSFP-TN0610 NR071508 siemens to92 n3 s | |
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marking DN
Abstract: DN2535
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DN2535 O-220, DSFP-DN2535 A100907 marking DN | |
Contextual Info: TN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
Original |
TN0606 100pF TN0606 DSPD-3TO92N3, D070808. DSFP-TN0606 NR071508 | |
marking n3
Abstract: TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92
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TN0604 140pF MS-013, DSFP-TN0604 A102507 marking n3 TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92 | |
SiTN
Abstract: TN0106 TN0106N3-G TN1506NW VF15
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TN0106 DSFP-TN0106 B030411 SiTN TN0106 TN0106N3-G TN1506NW VF15 | |
Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
Original |
TN0104 TN0104 O-243AA OT-89) O-243, DSFP-TN0104 A122707 | |
sitn
Abstract: TN0702N3-G
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TN0702 130pF DSFP-TN0702 B031411 sitn TN0702N3-G | |
marking TNContextual Info: TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
Original |
TN0620 110pF DSFP-TN0620 A0912008 marking TN | |
Contextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. |
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DN2530 DN2530 DSFP-DN2530 A103108 | |
Contextual Info: Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.0V max. On-resistance guaranteed at VGS = 2, 3, and 5V High input impedance Low input capacitance (130pF typical) Fast switching speeds Low on-resistance |
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TN0702 130pF DSFP-TN0702 B031411 | |
TN0106
Abstract: TN0106N3-G
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Original |
TN0106 DSFP-TN0106 A091208 TN0106 TN0106N3-G |