SIEMENS 350 98 O Search Results

siemens 350 98

Abstract: 11N60S5 SPW11N60S5
Contextual Info: SPW11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated 1 S,3 2 3 • Optimized capacitances COOLMOS • Improved noise immunity

20N60S5 TO247

Abstract: 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent SPW20N60S5 siemens 350 98 SPW20 20n60s
Contextual Info: SPW20N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated 1 S,3 2 3 • Optimized capacitances COOLMOS • Improved noise immunity

11n60s

Abstract: 11n60 SMD CASE footprint
Contextual Info: SPP11N60S5 SPB11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity

03N60S5

Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5
Contextual Info: SPP03N60S5 SPB03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity

04N60S5

Abstract: SPD04N60S5 P-TO251-3-1 P-TO252 SPU04N60S5 04N60
Contextual Info: SPU04N60S5 SPD04N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity

SPB02N60S5

Abstract: SPP02N60S5 02N60S5 siemens 230 98 O
Contextual Info: SPP02N60S5 SPB02N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity

Profibus PSSu PILZ

Abstract: gsd file of pilz plc Profinet PSSu PILZ siemens s7 plc 2DO2 PILZ pn 312043 OB35 PILZ pt-1 FB215
Contextual Info: PSSu 312043 Profinet with SIMATIC S7 Product Type: Name: Manufacturer: PSSu PSSu H F PN FS-Nibble-Mapping Halbbyte-Mapping Pilz GmbH & Co. KG, Safe Automation Document Release Number: Release Date: 03 23 July 2010 Important Note There are two versions of Application Note about “PSSu Profinet”.

03N60S5

Abstract: SPD03N60S5 P-TO251-3-1 P-TO252 SPU03N60S5
Contextual Info: SPU03N60S5 SPD03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity

07N60S5

Abstract: SIEMENS 07N60S5 SPB07N60S5 SPP07N60S5 07N60 WA80
Contextual Info: SPP07N60S5 SPB07N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity

SPB04N60S5

Abstract: 04N60S5 SPP04N60S5 04N60
Contextual Info: SPP04N60S5 SPB04N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity

SiEMENS EC 350 99

Abstract: SiEMENS PM 350 98 SIEMENS gas siemens 350 98 arrester siemens 350 SiEMENS EC 350 98 0 SIEMENS surge arrester dc spark-over voltage siemens SiEMENS EC 350 98 Q69-X81
Contextual Info: SIEMENS Gas Filled Surge Arrester EC350X Ordering code Q69-X81 DC spark-over voltage 1 2) 350 V ± 15% Impulse spark-over @ 1kV/ps for 99% of values measured < 900 V Insulation resistance @ 100 V > 10 G a Impulse discharge current wave 8/20 ps) 5 kA Alternating discharge current (50 Hz, 1s)

Contextual Info: SIEMENS BSP 350 MiniSmart Prelim inary Data • • • • • • • • • High-side switch Short-circuit protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Reverse 12 V battery protection Switching inductive load

bss138

Abstract: BSS98 siemens 350 98 Q62702-S566 Q62702-S558
Contextual Info: S I E M E N S SIPMOS " Small-Signal Transistors BSS 98 BSS 138 VDS = 50 V lD = 0 .3 /0 .2 2 A ^DS on = 3-5 O • N channel • Enhancement mode • Packages: TO-92, SOT-231) Type Marking Ordering code for version on bulk Ordering code for version in tap e2)

OB35

Abstract: gsd file of pilz plc Profinet PSSu PILZ FB215 PILZ pn 421-1BL01-0AA0 siemens s7 cpu 224 siemens s7 plc FB149 Pilz
Contextual Info: PSSu 312040 Profinet with SIMATIC S7 Product Type: Name: Manufacturer: PSSu PSSu H F PN, PSSu H S PN Pilz GmbH & Co. KG, Safe Automation Document Release Number: Release Date: 04 23 July 2010net Important Note There are two versions of Application Note about “PSSu Profinet”.

gaas fet marking a

Abstract: siemens gaas fet FET marking code Q62702-L90 cly5 cly 10 pd21
Contextual Info: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm

siemens 350 98

Contextual Info: SIEM EN S P lastic Fiber O ptic P hototransistor Detector P lastic C o n n ecto r H ousing S F H 350 S F H 350V Features • • • • • 2.2 mm aperture holds standard 1000 micron plastic fiber No fiber stripping required G ood linearity Sensitive in visible and near IR range

Contextual Info: SIEMENS 4M X 1-Bit Dynamic RAM HYB 514100-80/-10 Advanced Information • 4 194 304 words by 1-bit organization • Fast access and cycle time 80 ns access time 160 ns cycle time HYB 514100-80 100 ns access time 190 ns cycle time (HYB 514100-10) • Fast page mode cycle time

siemens gaas fet

Abstract: gaas fet marking J
Contextual Info: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163

514100J

Abstract: 514100J-80 514100
Contextual Info: SIEM ENS 4M X 1-Bit Dynamic RAM HYB 514100-80/-10 Advanced Information • 4 194 304 words by 1-bit organization • Fast access and cycle time 80 ns access time 160 ns cycle time HYB 514100-80 100 ns access time 190 ns cycle time (HYB 514100-10) • Fast page mode cycle time

Contextual Info: SIEMENS Video and Sound IF with FM-PLL Demodulator, AFC and V & S SCART TDA 5950X Bipolar 1C Features • Features video and sound IF • Video and sound SCART • AFC • NTSC option Type Ordering Code Package TDA 5950X Q67000-A5112 P-DSO-24-1 SMD TDA 5950X

siemens 350 98

Abstract: Q67000-S227
Contextual Info: Mini PROFET BSP 350 MiniPROFET • High-side switch • Short-circuit protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Reverse battery protection1 • Switching inductive load • Clamp of negative output voltage with inductive loads

FR 151 diode

Abstract: SiEMENS PM 350 98 SIMOPAC Module BSM 151 F C67076-A1050-A2 siemens 350 98 BSM151F siemens 350 BSM151 V103 SiEMENS EC 350 98 0
Contextual Info: 47E » SIEMENS • ÔEBSbDS SIEMENS DOEbMMI 3 ■ SIE6 AKTI ENGESELLSCHAF - r - 3 cM 5 SIMOPAC Modules Vas I = 500 V 56 A = d Ä D S o n • • • • • • • BSM 151 F BSM 151 FR = 0 .1 1 fl Power module Single switch FREDFET N channel Enhancement mode

siemens automotive relay dc 12v

Abstract: lt 6225
Contextual Info: SIEMENS Target Data Sheet TLE 6225 G Smart Quad Low-Side Switch Product Summary Features • Shorted circuit protection Supply voltage Vs • Overtemperature protection Drain source voltage VDS AZ max • Overvoltage protection On resistance (Tj = 25 °C)R3N(max)

B66361-G-X167

Abstract: B66362-B1014-T1 B66362B1014T1 ETD34 B66362-L1014-T1 B66361 B66361-G-X127 B66361-G-X187 B66361-G500-X1 N87 material
Contextual Info: ETD 34/17/11 Core B66361 ● In accordance with IEC 61185 ● Quality assurance per UTE 83313-001/ CECC 25 301-001 material N27 ● For SMPS transformers with optimum weight/performance ratio at small volume ● ETD cores are supplied as single units Magnetic characteristics (per set)