SPD04N60S5 |
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Infineon Technologies
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Cool MOS Power Transistor |
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SPD04N60S5 |
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Infineon Technologies
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N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; VDS (max): 600.0 V; Package: DPAK (TO-252); RDS(ON) @ TJ=25°C VGS=10: 850.0 mOhm; ID(max) @ TC=25°C: 4.5 A; IDpuls (max): 9.0 A; |
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Original |
PDF
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SPD04N60S5 |
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Infineon Technologies
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CoolMOS Power MOSFET, 600V, DPAK, RDSon=0.95 ?, 4.5A |
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Original |
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SPD04N60S5 |
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Toshiba
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Power MOSFETs Cross Reference Guide |
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Original |
PDF
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SPD04N60S5BTMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 4.5A TO252 |
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Original |
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