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    20N60S Price and Stock

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    Infineon Technologies AG SPP20N60S5

    Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SPP20N60S5 486 1
    • 1 $4.83
    • 10 $3.46
    • 100 $2.41
    • 1000 $2.35
    • 10000 $2.35
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    Mouser Electronics SPP20N60S5
    • 1 $5.28
    • 10 $2.80
    • 100 $2.55
    • 1000 $2.32
    • 10000 $2.15
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    ComSIT USA SPP20N60S5 227
    • 1 -
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    Win Source Electronics SPP20N60S5 9,752
    • 1 -
    • 10 $6.57
    • 100 $4.38
    • 1000 $4.38
    • 10000 $4.38
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    Infineon Technologies AG SPW20N60S5

    Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SPW20N60S5 140 1
    • 1 $4.81
    • 10 $4.32
    • 100 $3.82
    • 1000 $3.44
    • 10000 $3.44
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    Mouser Electronics SPW20N60S5 1,363
    • 1 $6.43
    • 10 $3.32
    • 100 $3.04
    • 1000 $2.71
    • 10000 $2.71
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    RS SPW20N60S5 Bulk 2 Weeks 1
    • 1 $6.56
    • 10 $6.03
    • 100 $6.03
    • 1000 $6.03
    • 10000 $6.03
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    Bristol Electronics SPW20N60S5 719
    • 1 -
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    Component Electronics, Inc SPW20N60S5 1,136
    • 1 $15.38
    • 10 $15.38
    • 100 $11.54
    • 1000 $10.00
    • 10000 $10.00
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    Win Source Electronics SPW20N60S5 3,000
    • 1 -
    • 10 $6.50
    • 100 $4.33
    • 1000 $4.33
    • 10000 $4.33
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    onsemi FGB20N60SFD-F085

    Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME FGB20N60SFD-F085 1
    • 1 $4.84
    • 10 $3.45
    • 100 $2.69
    • 1000 $2.69
    • 10000 $2.69
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    Avnet Americas FGB20N60SFD-F085 Tape & Reel 800
    • 1 -
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    Mouser Electronics FGB20N60SFD-F085 1,419
    • 1 $5.18
    • 10 $3.45
    • 100 $2.45
    • 1000 $2.18
    • 10000 $2.06
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    Newark () FGB20N60SFD-F085 Cut Tape 2,415 1
    • 1 $5.16
    • 10 $5.16
    • 100 $2.83
    • 1000 $2.66
    • 10000 $2.55
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    FGB20N60SFD-F085 Tape & Reel 2,415 100
    • 1 -
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    • 100 $2.83
    • 1000 $2.66
    • 10000 $2.55
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    FGB20N60SFD-F085 Tape & Reel 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.86
    • 10000 $2.61
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    Avnet Silica FGB20N60SFD-F085 15 Weeks 800
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    EBV Elektronik FGB20N60SFD-F085 15 Weeks 800
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    Infineon Technologies AG SPP20N60S5XKSA1

    Transistor: N-MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SPP20N60S5XKSA1 50
    • 1 -
    • 10 -
    • 100 $2.45
    • 1000 $2.31
    • 10000 $2.31
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    Avnet Americas SPP20N60S5XKSA1 Tube 19 Weeks 50
    • 1 -
    • 10 -
    • 100 $1.93
    • 1000 $1.84
    • 10000 $1.84
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    Bristol Electronics SPP20N60S5XKSA1 300 1
    • 1 $2.84
    • 10 $1.85
    • 100 $1.33
    • 1000 $1.22
    • 10000 $1.22
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    Rochester Electronics SPP20N60S5XKSA1 126 1
    • 1 -
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    • 100 $1.84
    • 1000 $1.65
    • 10000 $1.55
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    EBV Elektronik SPP20N60S5XKSA1 17 Weeks 500
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    Win Source Electronics SPP20N60S5XKSA1 9,000
    • 1 -
    • 10 -
    • 100 $2.63
    • 1000 $2.43
    • 10000 $2.43
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    Infineon Technologies AG SPW20N60S5FKSA1

    Transistor: N-MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SPW20N60S5FKSA1 30
    • 1 -
    • 10 -
    • 100 $3.08
    • 1000 $2.97
    • 10000 $2.97
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    Avnet Americas SPW20N60S5FKSA1 Tube 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $2.46
    • 1000 $2.35
    • 10000 $2.35
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    Rochester Electronics SPW20N60S5FKSA1 280 1
    • 1 -
    • 10 -
    • 100 $2.34
    • 1000 $2.09
    • 10000 $1.97
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    EBV Elektronik SPW20N60S5FKSA1 9 Weeks 240
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    Vyrian SPW20N60S5FKSA1 8,284
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    Find more 20N60S price and stock on Findchips.com

    20N60S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    20n60s5

    Abstract: 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5
    Contextual Info: 20N60S5 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated


    Original     		spp20n60s5spb20n60s5p-to263-3-2p-to220-3-1+6q67040-s475120n60s520n60stransistor 20n60s520n6020n60s5 datasheet PDF

    20n60s5* values

    Abstract: 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5
    Contextual Info: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		spw20n60s5pg-to247q67040-s423820n60s5+320n60s5* valuesspw20n60s5 equivalent20n60s5 to247 PDF

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor n60s5
    Contextual Info: SIEMENS 20N60S5 20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R 0S 0n in TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances


    OCR Scan     		spp20n60s5spb20n60s5n60s5/spbx1n60s5+5p-t0220-3-1p-t0263-3-220n60s5transistor 20n60s520n60s5 power transistor PDF

    transistor 20N60s5

    Abstract: SPW20N60S5
    Contextual Info: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		spw20n60s5pg-to247q67040-s423820n60s5+1transistor 20n60s5 PDF

    20n60s

    Abstract: 20n60s5 SPW20N60S5
    Contextual Info: 20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		spw20n60s5p-to247q67040-s423820n60s5+120n60s PDF

    SPW20N60S5 equivalent

    Abstract: 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60
    Contextual Info: 20N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19


    Original     		spw20n60s5p-to247spwx1n60s5q67040-s4238+520n60s5spw20n60s5 equivalent20n60s5 to247transistor 20n60s520n60 PDF

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s 20n60s5 datasheet S4751 smd diode 444 spp20n60s5 20n60 20n60s5 equivalent
    Contextual Info: 20N60S5 20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V • Improved periodic avalanche rating RDS(on) 0.19


    Original     		spp20n60s5spb20n60s5p-to263-3-2p-to220-3-1+10q67040-s475120n60s5transistor 20n60s520n60s5 power transistor20n60s20n60s5 datasheets4751smd diode 44420n6020n60s5 equivalent PDF

    transistor 20N60s5

    Abstract: 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5
    Contextual Info: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		spw20n60s5p-to247q67040-s423820n60s5+6transistor 20n60s5spw20n60s5 equivalent20n60s5 power transistor20n60s5 to24720n60sresistance value 20n60s5 PDF

    20N60S5

    Contextual Info: SIEMENS 20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity • Former development designation:


    OCR Scan     		spw20n60s5n60s5p-t024720n60s5+1q67040-s4238 PDF

    20n60s5

    Abstract: smd DIODE code marking 20A SPP20N60S5 20n60s5 power transistor Q67040-S4751
    Contextual Info: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original     		spp20n60s5pg-to220p-to220-3-1q67040-s4751+320n60s5smd diode code marking 20a20n60s5 power transistor PDF

    20N60S5

    Abstract: SPP20N60S5 Q67040-S4751 SPB20N60S5 20n60s
    Contextual Info: 20N60S5 20N60S5 Preliminary data D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 • Ultra low gate charge G,1 S,3 • Improved periodic avalanche rating • Extreme dv/dt rated COOLMOS


    Original     		spp20n60s5spb20n60s5sppx1n60s5/spbx1n60s5p-to220-3-1+4p-to263-3-220n60s5q67040-s475120n60s PDF

    20n60s5

    Abstract: SPP20N60S5 4252 spp20n60 Q67040-S4751 SPB20N60S5
    Contextual Info: 20N60S5 20N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO 220 · Ultra low gate charge · Improved periodic avalanche rating · Extreme dv/dt rated · Optimized capacitances


    Original     		spp20n60s5spb20n60s5sppx1n60s5/spbx1n60s5p-to220-3-1+520n60s5q67040-s4751p-to263-3-24252spp20n60 PDF

    20n60s5

    Abstract: spp20n60s5 20N60S transistor 20N60s5 20n60s5 power transistor
    Contextual Info: 20N60S5 20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 P-TO220-3-1 • Periodic avalanche rated


    Original     		spp20n60s5spb20n60s5p-to263-3-2p-to220-3-1+6q67040-s4751q67040-s417120n60s520n60stransistor 20n60s520n60s5 power transistor PDF

    75V-8V

    Contextual Info: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original     		spp20n60s5p-to220-3-1pg-to220-3-1q67040-s4751+220n60s575v-8v PDF

    20n60s5

    Abstract: SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s
    Contextual Info: 20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19 Ω • Optimized capacitances ID


    Original     		spw20n60s5p-to247q67040-s423820n60s5+4spw20n60s5 equivalenttransistor 20n60s520n60s5 to24720n60s PDF

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor n60s5 20n60s siemens 230 98 O SPP20N60S5 smd diode sm i7 siemens 350 98 Q67040-S4751
    Contextual Info: SIEMENS SP P 20N 60S 5 SP B 20N 60S 5 Prelim inary data c’ D ,2 Cool MOS Power Transistor I I • New revolutionary high voltage technology / Í • Worldwide best R o s { o n in TO 220 i 0 -G ,1 S /T • Periodic avalanche proved • I ‘


    OCR Scan     		spp20n60s5spb20n60s5n60s5/spbx1n60s5+10p-t0220-3-1p-t0263-3-220n60s5transistor 20n60s520n60s5 power transistor20n60ssiemens 230 98 osmd diode sm i7siemens 350 98q67040-s4751 PDF

    20N60S1

    Abstract: FMH20N60S1 600V 20A N-Channel MOSFET TO-3P
    Contextual Info: / 20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] φ3.2± 0.1 5±0.1 1.5±0.2 4.5±0.2 Drain D 3 ±0.2 1.5 Applications 15.5max 13 ± 0.2 10 ± 0.2


    Original     		fmh20n60s120n60s1600v 20a n-channel mosfet to-3p PDF

    20N60S5 TO247

    Abstract: 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent SPW20N60S5 siemens 350 98 SPW20 20n60s
    Contextual Info: 20N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated 1 S,3 2 3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		spw20n60s5spwx1n60s5p-to24720n60s5+8q67040-s423820n60s5 to247transistor 20n60s520n60s5 power transistorspw20n60s5 equivalentsiemens 350 98spw2020n60s PDF

    20N60S5 TO247

    Abstract: 20n60s5 20N60S5 to-247 SPW20N60S5 20n60s5* values
    Contextual Info: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		spw20n60s5pg-to247q67040-s423820n60s5+5009-134-ao-24720n60s5 to24720n60s5 to-24720n60s5* values PDF

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5 SPP20N60S5
    Contextual Info: SIEMENS 20N60S5 20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R q S 0 n ¡n TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme äv/ät rated • Optimized capacitances


    OCR Scan     		spp20n60s5spb20n60s5n60s5/spbx1n60s5+8p-t0220-3-1p-t0263-3-220n60s5transistor 20n60s520n60s5 power transistor20n60sspp20n60smd transistor s5 PDF

    SPP20N60S5

    Contextual Info: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original     		spp20n60s5p-to220-3-1pg-to220-3-1q67040-s4751+120n60s5 PDF

    20n60s

    Contextual Info: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		spb20n60s5p-to263-3-220n60s5q67040-s4171+120n60s PDF

    Contextual Info: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original     		spp20n60s5pg-to220p-to220-3-1q67040-s4751+120n60s5 PDF

    20N60S1

    Abstract: Fmv20n60 FMV20N60S1 fuji electric lot code 20N60S
    Contextual Info: / 20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]


    Original     		fmv20n60s1o-220f20n60s1fmv20n60+2fuji electric lot code20n60s PDF