SI9435 Search Results

8 pin ic 9435

Abstract: 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435
Contextual Info: Si9435DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain

SI9435BDY-E3

Abstract: Si9435BDY Si9435DY Si9435BDY-T1 Si9435BDY-T1-E3 Si9435DY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si9435BDY vs. Si9435DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9435BDY Replaces Si9435DY Si9435BDY-E3 (Lead (Pb)-free version) Replaces Si9435DY Si9435BDY-T1 Replaces Si9435DY-T1

Si64

Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S

Si9435DY

Contextual Info: Si9435DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 –30 30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET

si9435bdy vishay

Contextual Info: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4435DY

Abstract: Si4953DY Si6435DQ Si9435DY
Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ

Contextual Info: MOSFET IC SMD Type P-Channel Enhancement Mode MOSFET SI9435DY • Features ● 5.3 A, -30 V. RDS ON = 50 mΩ @ VGS = -10 V RDS(ON) = 80 mΩ @ VGS = -4.5 V ● Low gate charge ● Fast switching speed ● High performance trench technology for extremely low RDS(ON)

inductor 100uH

Abstract: capacitor 104 ceramic 10uf 25V capacitor CAPACITOR 0805 RESISTOR 1210 ceramic capacitor 104 Si9435DY 104 ceramic capacitor EP05Q03L Ceramic Capacitors 104
Contextual Info: Server +12V INPUT 1 C1 0.47uF 2 R2 10k C2 27nF VL EXT MAX1846 3 C3 220pF 4 CS 8 COMP PGND REF FB GND 5 P1 Si9435DY 55mOhm 9 FREQ R1 150k 300kHz C4 0.1uF 1846-12b RWY 08/10/01 10 V+ C5 10uF 25V CER 7 6 L1 100uH DS5022P -104 D1 EP05 Q03L R3 0.1 0.25W R4 97.6k

Si4435DY

Abstract: Si4953DY Si6435DQ Si9435DY
Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ

Si9435BDY-T1-GE3

Abstract: Si9435BDY Si9435BDY-T1-E3 si9435bdy vishay
Contextual Info: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si9435bdy vishay

Abstract: 72245
Contextual Info: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S 3 6 D

SI9435BDY-E3

Abstract: Si9435BDY Si9435BDY-T1
Contextual Info: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S 3 6 D

T0252AA

Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y

Si4435DY

Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361
Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S

Contextual Info: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si9435BDY

Abstract: Si9435BDY-T1
Contextual Info: Si9435BDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2

Si9435BDY

Abstract: si9435bdy vishay 7233-5
Contextual Info: SPICE Device Model Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

C 6090

Abstract: 2437 power mosfet 7400 spice model c 2437 power mosfet data AN609 Si9435BDY
Contextual Info: Si9435BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si9435BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = - 10 V - 5.7 0.055 @ VGS = - 6 V - 5.0 0.070 @ VGS = - 4.5 V - 4.4 - 30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S

Contextual Info: Si9435DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 –30 30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET

Si9435BDY

Abstract: Si9435BDY-T1-E3 Si9435BDY-T1-GE3
Contextual Info: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

C149

Abstract: R-163 TP0610T 100uf-16v c148 R164 R158 R159 MIC7221 Si9435DY
Contextual Info: Automatic Battery Switch-Over Circuit U40 Si9435DY 12VDC D12 F6 D 5-8 S 1-3 AC Adaptor VSOURCE 2.0A • • • SS24 G 4 7uA Supply Current 15V Max Supply Voltage Rail-to-Rail Input/Output + C133 100uF 16V R159 10k C148 0.1uF R157 1k R122 10k D21 RB400D R158

9435 fairchild

Abstract: 9435 mosfet mosfet 9435 Si9435DY 9435 so8
Contextual Info: Si9435DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain

Si9435BDY

Abstract: si9435bdy vishay
Contextual Info: SPICE Device Model Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range