SI6933DQ Search Results

7483

Abstract: AN609 Si6933DQ
Contextual Info: Si6933DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si6933DQ

Contextual Info: SPICE Device Model Si6933DQ Vishay Siliconix Dual P-Channel Enhancement-Mode MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6933DQ

Contextual Info: SPICE Device Model Si6933DQ Vishay Siliconix Dual P-Channel Enhancement-Mode MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI6933DQ

Contextual Info: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V ± 3.5 0.085 at VGS = - 4.5 V ± 2.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 TSSOP-8 G1 8 D2

Contextual Info: Si6933DQ Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D 8 7 6 5 Si6933DQ D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET

Si6933DQ

Contextual Info: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6933DQ G1 G2 Top View D1 D2 P-Channel MOSFET

Si6933DQ

Contextual Info: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V ± 3.5 0.085 at VGS = - 4.5 V ± 2.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 TSSOP-8 G1 8 D2

Contextual Info: Si6933DQ Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D 8 7 6 5 Si6933DQ D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET

2502P

Abstract: CBHK741B019 F63TNR FDW2502P Si6933DQ s4 35 diode marking code
Contextual Info: Si6933DQ Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage

S-49538

Abstract: Si6933DQ
Contextual Info: Si6933DQ Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D 8 7 6 5 Si6933DQ D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET

SI6933DQ

Contextual Info: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6933DQ G1 G2 Top View D1 D2 P-Channel MOSFET

SI6933DQ

Contextual Info: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V ± 3.5 0.085 at VGS = - 4.5 V ± 2.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 TSSOP-8 G1 8 D2

SI6933DQ

Contextual Info: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V ± 3.5 0.085 at VGS = - 4.5 V ± 2.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 TSSOP-8 G1 8 D2

Si6933DQ

Contextual Info: Si6933DQ Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D Si6933DQ 8 7 6 5 G1 D2 S2 S2 G2 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET

Si6933DQ

Contextual Info: SPICE Device Model Si6933DQ Vishay Siliconix Dual P-Channel Enhancement-Mode MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI2333DS-T1-E3

Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
Contextual Info: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

MOSFET TSSOP-8 dual n-channel

Abstract: MOSFET TSSOP-8 FDW2520C "MOSFET TSSOP-8" Complementary MOSFETs FDW254P FDW2501N FDW2501NZ FDW2503N FDW2503NZ
Contextual Info: Discrete MOSFET TSSOP-8 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TSSOP-8 N-Channel FDW2509NZ 20 Dual - 0.002 0.026 - 13 7.1 1.6 FDW2501N 20 Dual - 0.018 0.028 - 14 6

Contextual Info: - Thi s Documentcan notbe used wi thoutSamsung' s authori zati on - 10. PartList 1 Main Board Main Board Location SEC Code Name Specification Quantity B504 3301-000314 BEAD-SMD 120ohm,1.6x0.8x0.8mm,-,-,- 1 B510 3301-000314 BEAD-SMD 120ohm,1.6x0.8x0.8mm,-,-,-

MMZ1608S121AT

Abstract: nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2
Contextual Info: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D RIMINI CPU : INTEL YONAH-ULV

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

schematic diagram TCON lcd samsung

Abstract: T-CON BOARD samsung schematic diagram tcon samsung C319B samsung nc110 samsung T-CON Schematic T-CON Schematic samsung T-CON LCD samsung nc108 cs5845
Contextual Info: 4 2 3 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Page. 1 Page. 2 Page. 3 Page. 4