SI4946EY Search Results

50524

Abstract: si4946 SI4946EY-T1 Si4946EY SI4946EY-E3
Contextual Info: Si4946EY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V 4.5 0.075 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested SO-8 Pb-free

74067

Abstract: SI4946BEY-T1-E3 SI4946EY-T1-E3 Si4946BEY Dual N-Channel 60-V D-S SI4946EY-T1 Si4946EY
Contextual Info: Specification Comparison Vishay Siliconix Si4946BEY vs. Si4946EY Description: Dual N-Channel, 60 V D-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4946BEY-T1-E3 Replaces Si4946EY-T1-E3 Si4946BEY-T1 Replaces Si4946EY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

si4946

Abstract: Dual Gate mosfet spice Si4946EY
Contextual Info: SPICE Device Model Si4946EY Vishay Siliconix Dual N-Channel 50-V D-S Dual MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4946EY

Contextual Info: SPICE Device Model Si4946EY Vishay Siliconix Dual N-Channel 50-V D-S Dual MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

a244v

Abstract: Si4946EY
Contextual Info: Si4946EY Dual N-Channel 60-V, 175_C Rated MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Si4946EY-T1

Abstract: Si4946EY
Contextual Info: Si4946EY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V 4.5 0.075 @ VGS = 4.5 V 3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View Ordering Information: Si4946EY Si4946EY-T1 (with Tape and Reel)

Contextual Info: Si4946EY Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET Product Summary VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

si4649

Abstract: Si4946EY
Contextual Info: SPICE Device Model Si4946EY Vishay Siliconix Dual N-Channel 50-V D-S Dual MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4946EY

Contextual Info: Si4946EY Dual N-Channel 60-V, 175_C Rated MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Si4946EY

Abstract: Si4946EY-T1
Contextual Info: Si4946EY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V 4.5 0.075 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested SO-8 Pb-free

Si4946EY

Contextual Info: Si4946EY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4946EY

Contextual Info: Si4946EY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

70157

Abstract: 5-0524
Contextual Info: Si4946EY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V 4.5 0.075 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested SO-8 Pb-free

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

SI4946

Abstract: Si9940 brushless dc motor speed control simple circuit HIGH STABILITY MOTOR CONTROL DIGITAL TACHOMETER mosfet triggering circuit for dc motor Resistance of a 30 KW brushless dc motor si9979 AN714 Si4946EY Si9979CS
Contextual Info: AN714 Vishay Siliconix A Compact Controller for Brushless DC Motors Wharton McDaniel The drive electronics for 3-phase brushless dc motors often occupy a surprising amount of space. Complex circuitry is needed to drive the power MOSFETs, and this gets even more

SDCFB

Abstract: sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

si9970

Abstract: brushless dc motor simple circuit ups active power easy 600 SI9955 tachometer vdo SI9956
Contextual Info: _AN714 Vishay Siliconix A Compact Controller for Brushless DC Motors W harton McDaniel The drive electronics for 3-phase brushless dc motors often occupy a surprising amount of space. Complex circuitry is needed to drive the power MOSFETs, and this gets even

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

P-Channel TrenchFET Power MOSFET SOT-23

Abstract: TP0101T equivalent P-CHANNEL POWER MOSFET SO-8 TN0201T DUAL P- MOSFET SO-8
Contextual Info: Siliconix Vishay MOSFETs and Standard Products Visit Vishay’s Website at www.vishay.com LITTLE FOOT Power MOSFETs P-Channel MOSFETs ® LITTLE FOOT power MOSFETs are being designed into computer and computer peripheral products, telecom systems, automotive air bags, and numerous other

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

Contextual Info: TPS43331-Q1 www.ti.com SLVSA38 – DECEMBER 2009 DUAL SWITCHER AND LINEAR REGULATORS Check for Samples: TPS43331-Q1 FEATURES 1 • • • • • • • • • • • Input Operating Range 5 V to 30 V VBAT , With Transients Up to 40 V Two, Adjustable Output Voltage, Step-Down

si9456

Abstract: SI9940DY
Contextual Info: _AN709 Vishay Siliconix Designing with the Si9976DY N-Channei Half-Bridge Driver and LITTLE FOOT Dual MOSFETs Wharton McDaniel IN TRO DU CTIO N S i9976D Y OVERVIEW The Si9976DY is a fully integrated half-bridge driver 1C which