SI6969DQ Search Results

Si6969DQ

Contextual Info: Si6969DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.034 @ VGS = –4.5 V "4.6 0.050 @ VGS = –2.5 V "3.8 0.075 @ VGS = –1.8 V "3.0 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6969DQ 8 D2 7 S2 6 S2

Si6969DQ

Contextual Info: SPICE Device Model Si6969DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SI6969DQ VISH A Y Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product Si S2 o 9 TSSOP-8 d2 Di Si s2 s2 Gi g2 Si Si6969DQ Top View 6 6 Di d2 A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED ) P A R A M ETER SYM BOL

Si6969DQ

Contextual Info: Si6969DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = - 4.5 V ± 4.6 0.050 at VGS = - 2.5 V ± 3.8 0.075 at VGS = - 1.8 V ± 3.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated

Si6969DQ

Contextual Info: Si6969DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.034 @ VGS = - 4.5 V "4.6 0.050 @ VGS = - 2.5 V "3.8 0.075 @ VGS = - 1.8 V "3.0 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6969DQ 8 D2 7 S2 G1 G2 6 S2 5 G2

Si6969BDQ

Abstract: Si6969DQ Si6969DQ-T1
Contextual Info: Specification Comparison Vishay Siliconix Si6969BDQ vs. Si6969DQ Description: P-Channel, 1.8 V G-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6969BDQ-T1 Replaces Si6969DQ-T1 Si6969BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6969DQ-T1

tssop 38 footprint

Contextual Info: Si6969DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = - 4.5 V ± 4.6 0.050 at VGS = - 2.5 V ± 3.8 0.075 at VGS = - 1.8 V ± 3.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated

Si6969DQ

Contextual Info: Si6969DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.034 @ VGS = - 4.5 V "4.6 0.050 @ VGS = - 2.5 V "3.8 0.075 @ VGS = - 1.8 V "3.0 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6969DQ 8 D2 7 S2 G1 G2 6 S2 5 G2

Contextual Info: Si6969DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = - 4.5 V ± 4.6 0.050 at VGS = - 2.5 V ± 3.8 0.075 at VGS = - 1.8 V ± 3.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated

SDCFB

Abstract: sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

P-Channel TrenchFET Power MOSFET SOT-23

Abstract: TP0101T equivalent P-CHANNEL POWER MOSFET SO-8 TN0201T DUAL P- MOSFET SO-8
Contextual Info: Siliconix Vishay MOSFETs and Standard Products Visit Vishay’s Website at www.vishay.com LITTLE FOOT Power MOSFETs P-Channel MOSFETs ® LITTLE FOOT power MOSFETs are being designed into computer and computer peripheral products, telecom systems, automotive air bags, and numerous other

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

si5480

Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT