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SI4946 Datasheets (14)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4946BEY	Vishay Siliconix	Dual N-Channel 60-V (D-S) 175Â°C MOSFET	Original	PDF	125.64KB	7
SI4946BEY-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 6.5A 8-SOIC	Original	PDF		10
SI4946BEY-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 6.5A 8-SOIC	Original	PDF		10
SI4946CDY-T1-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET N-CHAN DUAL 60V SO-8	Original	PDF	160.86KB
Si4946EY	Unknown	Metal oxide N-channel FET, Enhancement Type	Original	PDF	42.75KB	4
SI4946EY	Unknown	Dual N-Channel 60-V (D-S), 175Â°C MOSFET	Original	PDF	53.59KB	4
Si4946EY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
Si4946EY	Vishay Intertechnology	Dual N-Channel 60-V (D-S), 175Â°C MOSFET	Original	PDF	68.39KB	4
SI4946EY	Vishay Siliconix	MOSFET, DUAL NN SO-8MOSFET, DUAL NN SO-8; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:60V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:30A; Power, Pd:2.4W; Resistance, Rds on:0.055R; SMD:1;	Original	PDF	72.87KB	5
SI4946EY	General Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 60V, Dual, Pkg Style SO-8	Scan	PDF	79.97KB	1
SI4946EY-DS	Vishay Telefunken	DS-Spice Model for Si4946EY	Original	PDF	210.04KB	3
Si4946EY SPICE Device Model	Vishay	Dual N-Channel 50-V (D-S) Dual MOSFET	Original	PDF	210.04KB	3
Si4946EY-T1	Vishay Siliconix	Dual N-Channel 60-V (D-S), 175Â°C MOSFET	Original	PDF	42.74KB	4
SI4946EY-T1-E3	Vishay Siliconix	MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:4.5A; On-Resistance, Rds(on):55mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8; Leaded Process Compatible:Yes	Original	PDF	72.87KB	5

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Vishay Intertechnologies SI4946CDY-T1-GE3 Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SI4946CDY-T1-GE3				2,500	1 - 10 - 100 - 1000 - 10000 $0.40	Get Quote
Avnet Americas	SI4946CDY-T1-GE3	Tape & Reel		52 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.32	Buy Now
Mouser Electronics	SI4946CDY-T1-GE3		412			1 $1.69 10 $0.81 100 $0.69 1000 $0.47 10000 $0.35	Buy Now
Newark ()	SI4946CDY-T1-GE3	Tape & Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.49	Buy Now
	SI4946CDY-T1-GE3	Tape & Reel			10	1 $1.75 10 $1.75 100 $0.66 1000 $0.47 10000 $0.37	Buy Now
	SI4946CDY-T1-GE3	Cut Tape			1	1 $1.75 10 $1.75 100 $0.66 1000 $0.47 10000 $0.37	Buy Now
	SI4946CDY-T1-GE3	Tape & Reel			100	1 - 10 - 100 $0.64 1000 $0.50 10000 $0.37	Buy Now
	SI4946CDY-T1-GE3	Cut Tape			1	1 $1.63 10 $1.63 100 $0.64 1000 $0.50 10000 $0.37	Buy Now
	SI4946CDY-T1-GE3	Tape & Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.52	Buy Now
TTI	SI4946CDY-T1-GE3	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.38	Buy Now

Avnet Asia	SI4946CDY-T1-GE3			54 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI4946CDY-T1-GE3			53 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI4946BEY-T1-E3 Dual N Channel Mosfet, 60V, Soic; \|Vishay SI4946BEY-T1-E3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	SI4946BEY-T1-E3	Cut Tape			1	1 $2.01 10 $2.01 100 $1.65 1000 $1.19 10000 $1.06	Buy Now
	SI4946BEY-T1-E3	Tape & Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.75	Buy Now
Bristol Electronics ()	SI4946BEY-T1-E3		598			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SI4946BEY-T1-E3		96		1	1 $2.85 10 $1.85 100 $1.34 1000 $1.34 10000 $1.34	Buy Now
Quest Components	SI4946BEY-T1-E3		76			1 $3.75 10 $2.50 100 $1.88 1000 $1.88 10000 $1.88	Buy Now
Vishay Intertechnologies SI4946BEY-T1-GE3 Dual N Channel Mosfet; \|Vishay SI4946BEY-T1-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SI4946BEY-T1-GE3	Cut Tape			2,500	1 - 10 - 100 - 1000 - 10000 $1.39	Buy Now
Vishay Siliconix SI4946BEY-T1-E3 DUAL N-CHANNEL MOSFET TRANSISTOR 6.5 A 60 V 8-PIN SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SI4946BEY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.07	Get Quote
Vishay Siliconix SI4946BEY-T1-GE3 SI4946BEY-T1-GE3 DUAL N-CHANNEL MOSFET TRANSISTOR, 6.5 A, 60 V, 8-PIN SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SI4946BEY-T1-GE3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.79	Get Quote

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SI4946 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si4946BEY-T1-E3 Abstract: Si4946BEY SI4946BEY-T1-GE3 Contextual Info: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4946bey 2002/95/ec si4946bey-t1-e3 si4946bey-t1-ge3 +118-jul-08	PDF
50524 Abstract: si4946 SI4946EY-T1 Si4946EY SI4946EY-E3 Contextual Info: Si4946EY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V 4.5 0.075 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested SO-8 Pb-free	Original	si4946ey si4946ey-t1 si4946ey--e3 si4946ey-t1--e3 +408-apr-05 50524 si4946 si4946ey-e3	PDF
4026 datasheet Abstract: A 2231 AN609 Si4946BEY 36892 1.0895 3-3-508 Contextual Info: Si4946BEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si4946bey an609 23-jan-06 4026 datasheet +4a 2231 36892 1.0895 3-3-508	PDF
74067 Abstract: SI4946BEY-T1-E3 SI4946EY-T1-E3 Si4946BEY Dual N-Channel 60-V D-S SI4946EY-T1 Si4946EY Contextual Info: Specification Comparison Vishay Siliconix Si4946BEY vs. Si4946EY Description: Dual N-Channel, 60 V D-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4946BEY-T1-E3 Replaces Si4946EY-T1-E3 Si4946BEY-T1 Replaces Si4946EY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	si4946bey si4946ey si4946bey-t1-e3 si4946ey-t1-e3 +4si4946bey-t1 si4946ey-t1 74067 dual n-channel 60-v d-s	PDF
si4946 Abstract: Dual Gate mosfet spice Si4946EY Contextual Info: SPICE Device Model Si4946EY Vishay Siliconix Dual N-Channel 50-V D-S Dual MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4946ey s-52575rev 02-jan-06 si4946 +1dual gate mosfet spice	PDF
Si4946BEY Contextual Info: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4946bey 2002/95/ec si4946bey-t1-e3 si4946bey-t1-ge3 +111-mar-11	PDF
Si4946EY Contextual Info: SPICE Device Model Si4946EY Vishay Siliconix Dual N-Channel 50-V D-S Dual MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4946ey 18-jul-08	PDF
a244v Abstract: Si4946EY Contextual Info: Si4946EY Dual N-Channel 60-V, 175_C Rated MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	si4946ey s-49520--rev 18-dec-96 a244v	PDF
Si4946BEY-T1-E3 Abstract: SI4946BEY-T1-GE3 Si4946BEY Contextual Info: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4946bey 2002/95/ec si4946bey-t1-e3 si4946bey-t1-ge3 +118-jul-08	PDF
Contextual Info: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4946bey 2002/95/ec si4946bey-t1-e3 si4946bey-t1-ge3 +22011/65/eu 12-mar-12	PDF
Si4946EY-T1 Abstract: Si4946EY Contextual Info: Si4946EY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V 4.5 0.075 @ VGS = 4.5 V 3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View Ordering Information: Si4946EY Si4946EY-T1 (with Tape and Reel)	Original	si4946ey si4946ey-t1 s-03950--rev 26-may-03	PDF
Si4946BEY Contextual Info: Si4946BEY Vishay Siliconix New Product Dual N-Channel 60-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.041 @ VGS = 10 V 6.5 0.052 @ VGS = 4.5 V 5.8 Qg (Typ) 9 2 nC 9.2 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature	Original	si4946bey si4946bey-t1--e3 08-apr-05	PDF
Contextual Info: Si4946EY Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET Product Summary VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	si4946ey s-57253--rev 24-feb-98	PDF
si4649 Abstract: Si4946EY Contextual Info: SPICE Device Model Si4946EY Vishay Siliconix Dual N-Channel 50-V D-S Dual MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4946ey 05-nov-99 si4649	PDF

Contextual Info: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4946bey 2002/95/ec si4946bey-t1-e3 si4946bey-t1-ge3 +22011/65/eu 12-mar-12	PDF
Si4946EY Contextual Info: Si4946EY Dual N-Channel 60-V, 175_C Rated MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	si4946ey s-49520--rev 18-dec-96	PDF
Si4946EY Abstract: Si4946EY-T1 Contextual Info: Si4946EY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V 4.5 0.075 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested SO-8 Pb-free	Original	si4946ey si4946ey-t1 si4946ey--e3 si4946ey-t1--e3 +118-jul-08	PDF
SI4946BEY Abstract: Si4946BEY-T1-E3 Contextual Info: Si4946BEY Vishay Siliconix New Product Dual N-Channel 60-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.041 @ VGS = 10 V 6.5 0.052 @ VGS = 4.5 V 5.8 Qg (Typ) 9 2 nC 9.2 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature	Original	si4946bey si4946bey-t1--e3 s-51013--rev 23-may-05 +1si4946bey-t1-e3	PDF
Si4946EY Contextual Info: Si4946EY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	si4946ey s-57253--rev 24-feb-98	PDF
Si4946EY Contextual Info: Si4946EY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	si4946ey s-45854--rev 06-nov-95	PDF
Contextual Info: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4946bey 2002/95/ec si4946bey-t1-e3 si4946bey-t1-ge3 +32011/65/eu js709a 02-oct-12	PDF
S-51132 Abstract: Si4946BEY Contextual Info: SPICE Device Model Si4946BEY Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4946bey to-10-v 18-jul-08 s-51132	PDF
Si4946BEY-T1-E3 Contextual Info: Si4946BEY Vishay Siliconix New Product Dual N-Channel 60-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.041 @ VGS = 10 V 6.5 0.052 @ VGS = 4.5 V 5.8 Qg (Typ) 9 2 nC 9.2 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature	Original	si4946bey si4946bey-t1--e3 18-jul-08 si4946bey-t1-e3	PDF
70157 Abstract: 5-0524 Contextual Info: Si4946EY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V 4.5 0.075 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested SO-8 Pb-free	Original	si4946ey si4946ey-t1 si4946ey--e3 si4946ey-t1--e3 +4s-50524--rev 28-mar-05 70157 5-0524	PDF

SI4946 Search Results

SI4946 Datasheets (14)

SI4946 Price and Stock

Vishay Intertechnologies SI4946CDY-T1-GE3

Vishay Intertechnologies SI4946BEY-T1-E3

Vishay Intertechnologies SI4946BEY-T1-GE3

Vishay Siliconix SI4946BEY-T1-E3

Vishay Siliconix SI4946BEY-T1-GE3

SI4946 Datasheets Context Search

Si4946BEY-T1-E3

50524

4026 datasheet

74067

si4946

Si4946BEY

Si4946EY

a244v

Si4946BEY-T1-E3

Si4946EY-T1

Si4946BEY

si4649

Si4946EY

Si4946EY

SI4946BEY

Si4946EY

Si4946EY

S-51132

Si4946BEY-T1-E3

70157