SI4943BDY Search Results
SI4943BDY Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI4943BDY | Vishay Siliconix | MOSFETs | Original | 54.87KB | 5 | ||
| SI4943BDY-E3 | Vishay | Dual P-Channel 20-V (D-S) MOSFET | Original | 54.87KB | 5 | ||
| SI4943BDY-T1-E3 | Vishay | Dual P-Channel 20-V (D-S) MOSFET | Original | 54.87KB | 5 | ||
| SI4943BDY-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 6.3A 8-SOIC | Original | 9 | |||
| SI4943BDY-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 6.3A 8-SOIC | Original | 9 |
SI4943BDY Price and Stock
Vishay Intertechnologies SI4943BDY-T1-GE3MOSFETs 20V 8.4A 2.0W 19mohm @ 10V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4943BDY-T1-GE3 |
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Vishay Siliconix SI4943BDY-T1-E3SI4943BDY-T1-E3 P-CHANNEL MOSFET MODULE, 6.3 A, 20 V, 8-PIN SOIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4943BDY-T1-E3 | Bulk | 2,500 |
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SI4943BDY-T1-E3 | 47 |
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SI4943BDY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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AN609
Abstract: Si4943BDY
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Original |
si4943bdyan60919-mar-07 | |
Si4943BDY-T1-E3
Abstract: Si4943BDY Si4943DY Si4943DY-T1-E3
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si4943bdysi4943dysi4943bdy-t1si4943dy-t1+3 | |
Si4943BDY
Abstract: Si4943BDY-T1-E3 Si4943BDY-T1-GE3 DSA0038437
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si4943bdy2002/95/ecsi4943bdy-t1-e3si4943bdy-t1-ge3+2 | |
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Contextual Info: Si4943BDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A) 0.019 at VGS = - 10 V - 8.4 0.031 at VGS = - 4.5 V - 6.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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si4943bdy2002/96/ecsi4943bdy-t1-e3si4943bdy-t1-ge3+1 | |
Si4943BDY
Abstract: Si4943BDY-T1-E3
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si4943bdysi4943bdy--e3si4943bdy-t1--e3s-41527--rev+2 | |
Si4943BDYContextual Info: Si4943BDY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.019 @ VGS = −10 V −8.4 0.031 @ VGS = −4.5 V −6.7 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D Load Switching |
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si4943bdysi4943bdy--e3si4943bdy-t1--e308-apr-05 | |
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Contextual Info: Si4943BDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A) 0.019 at VGS = - 10 V - 8.4 0.031 at VGS = - 4.5 V - 6.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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si4943bdy2002/95/ecsi4943bdy-t1-e3si4943bdy-t1-ge3+2 | |
Si4943BDYContextual Info: SPICE Device Model Si4943BDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4943bdy18-jul-08 | |
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Contextual Info: Si4943BDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A) 0.019 at VGS = - 10 V - 8.4 0.031 at VGS = - 4.5 V - 6.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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si4943bdy2002/95/ecsi4943bdy-t1-e3si4943bdy-t1-ge3+3 | |
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Contextual Info: New Product Si4943BDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 8.4 0.031 at VGS = - 4.5 V - 6.7 • TrenchFET Power MOSFET • 100 % Rg Tested RoHS APPLICATIONS COMPLIANT |
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si4943bdysi4943bdy-t1-e318-jul-08 | |
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Contextual Info: Si4943BDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A) 0.019 at VGS = - 10 V - 8.4 0.031 at VGS = - 4.5 V - 6.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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si4943bdy2002/95/ecsi4943bdy-t1-e3si4943bdy-t1-ge3+1 | |
Si4943BDY
Abstract: S-52398
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si4943bdys-52398rev21-nov-05s-52398 | |
Si4943BDY-T1-E3
Abstract: Si4943BDY Si4943BDY-T1-GE3
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Original |
si4943bdy2002/95/ecsi4943bdy-t1-e3si4943bdy-t1-ge3+1 | |
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Contextual Info: New Product Si4943BDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 8.4 0.031 at VGS = - 4.5 V - 6.7 • TrenchFET Power MOSFET • 100 % Rg Tested RoHS APPLICATIONS COMPLIANT |
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si4943bdysi4943bdy-t1-e308-apr-05 | |
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
BS250KL-TR1-E3
Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
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si3865bdv-t1-e3ct-ndsi4720cy-t1-e3ct-ndsi6924aedq-t1-e3ct-ndsi1040x-t1-e3tr-nd+16 | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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cy8c38cy8c29incl79512t9797+16 | |
BS250KL
Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
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sc-75sc-75asc-89bs250kl+9 | |
CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
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o-251/to-252o-220/to-263ot-23ot-223+13 | |
220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
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ad9272p462-ndlng295lfcp2up463-nd+11 | |