SI4807DY Search Results
SI4807DY Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| Si4807DY | Unknown | Metal oxide P-channel FET, Enhancement Type | Original | 57.34KB | 5 | ||
| Si4807DY | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| SI4807DY-T1 | Vishay Intertechnology | P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET | Original | 76.23KB | 5 |
SI4807DY Price and Stock
Vishay Siliconix SI4807DYP-CHANNEL 30:1 RATIO DUAL-GATE 30-V (D-S) MOSFET Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4807DY | 100 |
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Get Quote | |||||||
SI4807DY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si4807DY Vishay Siliconix P-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(ON) (W) Gate 1 –30 30 Gate 2 ID (A) 0.035 @ VGS = –10 V "6 0.054 @ VGS = –4.5 V "4.8 1.3 @ VGS = –10 V "0.9 2.2 @ VGS = –4.5 V "0.7 D SO-8 G2 1 |
Original |
si4807dy08-apr-05 | |
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Contextual Info: Si4807DY Siliconix P-Ch 30:1 Ration Dual-Gate 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) RDS(ON) (W) Gate 1 –30 ID (A) 0.035 @ VGS = –10 V "6 0.054 @ VGS = –4.5 V "4.8 1.3 @ VGS = –10 V "0.9 2.2 @ VGS = –4.5 V "0.7 Gate 2 D SO-8 G2 1 8 G1 2 7 D NC |
Original |
si4807dys-49530--rev19-nov-97 | |
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Contextual Info: Si4807DY Vishay Siliconix P-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(ON) (W) Gate 1 –30 30 Gate 2 ID (A) 0.035 @ VGS = –10 V "6 0.054 @ VGS = –4.5 V "4.8 1.3 @ VGS = –10 V "0.9 2.2 @ VGS = –4.5 V "0.7 D SO-8 G2 1 |
Original |
si4807dys-0065227-mar-00 | |
70643
Abstract: dual gate p-channel Si4807DY
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Original |
si4807dys-49562--rev19-dec-9670643+1 | |
70643
Abstract: Si4807DY
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Original |
si4807dy18-jul-0870643 | |
Si4807DY
Abstract: 70643
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Original |
si4807dys-00652--rev27-mar-0070643 | |
Si4807DYContextual Info: Si4807DY P-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET Product Summary VDS (V) Gate 1 –30 rDS(on) (W) ID (A) 0.035 @ VGS = –10 V "6 0.054 @ VGS = –4.5 V "4.8 1.3 @ VGS = –10 V "0.9 2.2 @ VGS = –4.5 V "0.7 Gate 2 D SOĆ8 G2 1 8 NC G1 2 7 D S 3 |
Original |
si4807dys-49530--rev19-nov-97 | |
STM9435
Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
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Original |
stu3055l2apm2034nustu4030nlapm2512nu+15 | |
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
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Original |
ao4405ao4407ao4408ao4409+16 | |
VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
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Original |
si4831dysi4833dysi4852dysi4816dy+14 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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Original |
2n70002n70022sj3772sj378+16 | |
semiconductor cross reference
Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
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Original |
stu3055l2apm2034nustu4030nlapm2512nu+15 | |
Siliconix mosfet guide
Abstract: Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ
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Original |
si9731tssop-16si9371siliconix mosfet guide+8 | |
TEMIC K153P
Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
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Original |
wn1053wn1087-18rwn1087-tr1wn1090+16 |